Microsemi APT30GS60KR Thunderbolt high speed npt igbt Datasheet

APT30GS60KR(G)
600V, 30A, VCE(ON) = 2.8V Typical
Thunderbolt® High Speed NPT IGBT
The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to
the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low
switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET
performance but lower cost.
An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient
make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise
and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's
suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy
ruggedness.
APT30GS60KR(G)
Features
Typical Applications
• Fast Switching with low EMI
• ZVS Phase Shifted and other Full Bridge
• Very Low EOFF for Maximum Efficiency
• Half Bridge
• Short circuit rated
• High Power PFC Boost
• Low Gate Charge
• Welding
• Tight parameter distribution
• Induction heating
• Easy paralleling
• High Frequency SMPS
C
G
E
• RoHS Compliant
Absolute Maximum Ratings
Symbol
Parameter
Rating
I C1
Continuous Collector Current TC = @ 25°C
54
I C2
Continuous Collector Current TC = @ 100°C
30
I CM
Pulsed Collector Current 1
113
VGE
Gate-Emitter Voltage
SSOA
Unit
A
±30V
V
Switching Safe Operating Area
113
EAS
Single Pulse Avalanche Energy 2
165
mJ
tSC
Short Circut Withstand Time 3
10
µs
Thermal and Mechanical Characteristics
TJ, TSTG
Typ
Max
Unit
Total Power Dissipation TC = @ 25°C
-
-
250
W
Junction to Case Thermal Resistance
-
-
0.50
Case to Sink Thermal Resistance, Flat Greased Surface
-
0.11
-
-55
-
150
-
-
300
-
0.22
-
oz
-
5.9
-
g
-
-
10
in·lbf
-
-
1.1
N·m
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque
Mounting Torque, 6-32 M3 Screw
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Microsemi Website - http://www.microsemi.com
°C/W
°C
8-2007
RθCS
Min
Rev A
RθJC
Parameter
052-6307
Symbol
PD
Static Characteristics
Symbol
VBR(CES)
Parameter
VBR(ECS)
TJ = 25°C unless otherwise specified
Min
Typ
Max
Collector-Emitter Breakdown Voltage
Test Conditions
VGE = 0V, IC = 250µA
600
-
-
Emitter-Collector Breakdown Voltage
VGE = 0V, IC = 1A
-
25
-
Reference to 25°C, IC = 250µA
-
0.60
-
TJ = 25°C
-
2.8
3.15
TJ = 125°C
-
3.25
-
3
4
5
∆VBR(CES)/∆TJ Breakdown Voltage Temperature Coeff
VCE(ON)
Collector-Emitter On Voltage 4
VGE(th)
Gate-Emitter Threshold Voltage
∆VGE(th)/∆TJ Threshold Voltage Temp Coeff
ICES
Zero Gate Voltage Collector Current
IGES
Gate-Emitter Leakage Current
Dynamic Characteristics
Symbols
gfs
Input Capacitance
Output Capacitance
Cres
Reverse Transfer Capacitance
Co(cr)
Reverse Transfer Capacitance
Charge Related 5
Co(er)
Reverse Transfer Capacitance
Current Related 6
Qg
Total Gate Charge
Gate-Emitter Charge
Ggc
Gate-Collector Charge
td(on)
Turn-On Delay Time
tf
Turn-On Switching Energy
Turn-On Switching Energy
9
Eoff
Turn-Off Switching Energy
10
td(on)
Turn-On Delay Time
Eon1
8-2007
Fall Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
8
Eon2
Turn-On Switching Energy
9
Eoff
Turn-Off Switching Energy 10
Unit
V
V/°C
V
-
6.7
-
TJ = 25°C
-
-
50
TJ = 125°C
-
-
1000
-
-
±100
nA
Min
Typ
Max
Unit
-
18
-
S
-
1600
-
-
140
-
-
90
-
-
130
-
VGE = ±20V
VGE = 0V, VCE = 25V
f = 1MHz
VGE = 0V
VCE = 0 to 400V
Inductive Switching IGBT and
Diode:
Turn-Off Delay Time
Eon2
tf
Rev A
Rise Time
8
td(off)
VCE = 600V,
VGE = 0V
VGE = 0 to 15V
IC = 30A, VCE = 300V
Eon1
tr
VGE = VCE, IC = 1mA
Test Conditions
VCE = 50V, IC = 30A
Forward Transconductance
Qge
VGE = 15V
IC = 30A
TJ = 25°C unless otherwise specified
Coes
td(off)
052-6307
Parameter
Cies
tr
APT30GS60KR(G)
TJ = 25°C, VCC = 400V,
IC = 30A
RG = 9.1Ω 7, VGG = 15V
mV/°C
µA
pF
95
-
145
-
-
12
-
-
65
-
-
16
-
-
29
-
-
360
-
-
27
-
-
TBD
-
-
800
-
-
570
-
-
16
-
Inductive Switching IGBT and
Diode:
-
29
-
-
390
-
TJ = 125°C, VCC = 400V,
IC = 30A
RG = 9.1Ω 7, VGG = 15V
-
22
-
-
TBD
-
-
1185
-
-
695
-
nC
ns
mJ
ns
mJ
TYPICAL PERFORMANCE CURVES
VGE = 15V
80
TJ = 25°C
60
40
TJ = 125°C
20
TJ = 150°C
0
0
1
2
3
4
5
6
7
8
VCE(ON), COLLECTER-TO-EMITTER VOLTAGE (V)
100
TJ = 125°C
TJ = 25°C
80
TJ = -55°C
60
40
20
0
2
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
IC = 60A
IC = 30A
IC = 15A
2
1
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
6
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC = 60A
5
4
IC = 30A
3
IC = 15A
2
1
0
6
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
14
25
50
75
100
125
150
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Junction Temperature
VCE = 120V
12
VCE = 300V
10
8
VCE = 480V
6
4
2
0
0
2000
0
20
40
60 80 100 120 140 160
GATE CHARGE (nC)
FIGURE 6, Gate Charge
0
100
200
300
400
500
600
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
8-2007
Cres
50
Rev A
Coes
IC, DC COLLECTOR CURRENT(A)
60
Cies
P
C, CAPACITANCE ( F)
6V
052-6307
3
10
8V
20
16
4
100
9V
40
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage
VGE, GATE-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
1000
10V
60
FIGURE 2, Output Characteristics
5
0
11V
80
0
5
10
15
20
25
30
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
VGE = 13 & 15V
12V
100
0
FIGURE 1, Output Characteristics
0
T = 125°C
J
100
120
APT30GS60KR(G)
120
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
120
TYPICAL PERFORMANCE CURVES
20
VGE = 15V
15
10
5 VCE = 400V
TJ = 25°C, TJ =125°C
RG = 9.1Ω
L = 100µH
0
tf, FALL TIME (ns)
tr, RISE TIME (ns)
40
30
20
RG = 9.1Ω, L = 100µH, VCE = 400V
30
TJ = 125°C, VGE = 15V
20
TJ = 25°C, VGE = 15V
10
0
0
1600
= 400V
V
CE
= +15V
V
GE
R = 9.1Ω
G
3000
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
EOFF, TURN OFF ENERGY LOSS (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
VCE = 400V
RG = 9.1Ω
L = 100µH
40
10
TJ = 125°C,VGE =15V
2000
1000
TJ = 25°C,VGE =15V
0
J
4
Eon2,60A
Eoff,60A
2
Eon2,30A
1
Eoff,30A
Eoff,15A
Eon2 15A
,
0
G
1200
TJ = 125°C, VGE = 15V
1000
800
600
400
200
TJ = 25°C, VGE = 15V
4
= 400V
V
CE
= +15V
V
GE
T = 125°C
3
1400
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (mJ)
5
= 400V
V
CE
= +15V
V
GE
R = 9.1Ω
0
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
SWITCHING ENERGY LOSSES (mJ)
100
50
4000
8-2007
200
TJ = 25 or 125°C,VGE = 15V
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
Rev A
VGE =15V,TJ=25°C
60
RG = 9.1Ω, L = 100µH, VCE = 400V
50
0
VGE =15V,TJ=125°C
300
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
60
052-6307
400
0
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
70
APT30GS60KR(G)
500
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
25
= 400V
V
CE
= +15V
V
GE
R = 9.1Ω
G
3
Eon2,60A
2
Eoff,60A
Eon2,30A
1
Eoff,30A
Eon2,15A
0
Eoff,15A
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT30GS60KR(G)
200
200
100
100
10
VCE(on)
13µs
100µs
1ms
1
10ms
100ms
0.1
DC line
TJ = 125°C
TC = 75°C
ICM
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
ICM
10
VCE(on)
13µs
100µs
1ms
0.1
1
10
100
800
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 17, Forward Safe Operating Area
10ms
100ms
TJ = 150°C
TC = 25°C
1
DC line
Scaling for Different Case & Junction
Temperatures:
IC = IC(T = 25°C)*(TJ - TC)/125
C
1
10
100
800
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 18, Maximum Forward Safe Operating Area
0.50
0.9
0.40
0.7
0.30
0.5
0.20
Note:
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.60
0.3
t1
t2
0.10
0
SINGLE PULSE
0.1
0.05
10-5
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
0.209
0.00245
0.00548
0.165
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 20, Transient Thermal Impedance Model
T = 100°C
C
10
1
T = 125°C
J
T = 75°C
C
D = 50 %
= 400V
V
CE
R = 9.1Ω
G
Fmax = min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
0
10
20
30
40
50
IC, COLLECTOR CURRENT (A)
Figure 21, Operating Frequency vs Collector Current
8-2007
0.207
C
Rev A
0.0838
Dissipated Power
(Watts)
T = 75°C
052-6307
TC (°C)
ZEXT
TJ (°C)
FMAX, OPERATING FREQUENCY (kHz)
120
APT30GS60KR(G)
APT40DQ60
Gate Voltage
10%
TJ = 125°C
td(on)
Collector Current
IC
V CC
V CE
90%
tr
5%
5%
10%
Collector Voltage
Switching Energy
A
D.U.T.
Figure 23, Turn-on Switching Waveforms and Definitions
Figure 22, Inductive Switching Test Circuit
Gate Voltage
TJ = 125°C
90%
td(off)
Collector Voltage
90%
tf
10%
0
Collector Current
Switching Energy
Figure 24, Turn-off Switching Waveforms and Definitions
FOOT NOTE:
052-6307
Rev A
8-2007
1
2
3
4
5
6
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at TJ = 25°C, L = 224µH, RG = 25Ω, IC = 30A
Short circuit time: VGE = 15V, VCC ≤ 600V, TJ ≤ 150°C
Pulse test: Pulse width < 380µs, duty cycle < 2%
Co(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES.
Co(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of
VCE less than V(BR)CES, use this equation: Co(er) = -1.40E-7/VDS^2 + 1.47E-8/VDS + 5.95E-11.
7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452).
8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the
IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode.
9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy.
10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT30GS60KR(G)
TO-220 K Package Outline
e1 SAC: Tin, Silver, Copper
Dimensions in Inches and (Millimeters)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6307
Rev A
Gate
Collector
Emitter
8-2007
Collector
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