ON MBRS190T3 Schottky power rectifier Datasheet

MBRS1100T3, MBRS190T3
Preferred Devices
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes, in
surface mount applications where compact size and weight are critical
to the system. These state-of-the-art devices have the following
features:
•
•
•
•
•
•
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
High Blocking Voltage — 100 Volts
150°C Operating Junction Temperature
Guardring for Stress Protection
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
90, 100 VOLTS
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
SMB
CASE 403A
PLASTIC
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
•
•
260°C Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2500 units per reel
Cathode Polarity Band
Markings; MBRS190T3: B19
Markings; MBRS1100T3: B1C
MARKING DIAGRAM
B1x
B1x = Device Code
x
= 9 or C
MAXIMUM RATINGS
Rating
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBRS190T3
MBRS1100T3
VRRM
VRWM
VR
Average Rectified Forward Current
TL = 120°C
TL = 100°C
IF(AV)
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM
Operating Junction Temperature
Voltage Rate of Change
 Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 5
Value
Unit
V
ORDERING INFORMATION
90
100
Device
Package
Shipping
MBRS1100T3
SMB
2500/Tape & Reel
MBRS190T3
SMB
2500/Tape & Reel
A
1.0
2.0
50
A
Preferred devices are recommended choices for future use
and best overall value.
TJ
–65 to +150
°C
dv/dt
10
V/ns
1
Publication Order Number:
MBRS1100T3/D
MBRS1100T3, MBRS190T3
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
RθJL
22
°C/W
Maximum Instantaneous Forward Voltage (Note 1.)
(iF = 1.0 A, TJ = 25°C)
VF
0.75
Volts
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
IR
Thermal Resistance — Junction to Lead (TL = 25°C)
ELECTRICAL CHARACTERISTICS
mA
0.5
5.0
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
1K
400
200
100
40
20
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
20
10
TJ = 150°C
5
2
100°C
1
0.5
25°C
0.2
0.1
0.05
0.02
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
TJ = 150°C
I R , REVERSE CURRENT ( µA)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL ELECTRICAL CHARACTERISTICS
1
1.1 1.2 1.3
125°C
100°C
25°C
0
10
20
30
40
50
60
70
80
90
100
VR, REVERSE VOLTAGE (VOLTS)
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
3.2
4.0
2.8
3.0
DC
2.5
2.0
SQUARE
WAVE
1.6
SQUARE
WAVE
2.0
DC
1.2
1.5
1.0
0.8
0.5
0.4
0
RATED VR APPLIED
RθJL = 22°C/W
TJ = 100°C
3.5
TJ = 100°C
2.4
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
*The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be estimated
from these curves if VR is sufficient below rated VR.
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
20
40
60
80
100
120
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
TL, LEAD TEMPERATURE (°C)
Figure 3. Power Dissipation
Figure 4. Current Derating, Lead
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2
140
160
MBRS1100T3, MBRS190T3
C, CAPACITANCE (pF)
TYPICAL ELECTRICAL CHARACTERISTICS
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
NOTE: TYPICAL CAPACITANCE
NOTE: AT 0 V = 270 pF
0.1
0.2
0.5
1
2
5
10
20
50
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
INFORMATION FOR USING THE SMB SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.089
2.261
0.108
2.743
0.085
2.159
inches
mm
MOUNTING PRECAUTIONS
• The soldering temperature and time shall not exceed
260°C for more than 5 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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MBRS1100T3, MBRS190T3
PACKAGE DIMENSIONS
SMB
PLASTIC PACKAGE
CASE 403A–03
ISSUE D
S
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
D
B
C
K
P
J
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
H
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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MBRS1100T3/D
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