Renesas FS10VS-9A-T11 High-speed switching use nch power mos fet Datasheet

FS10VS-9A
High-Speed Switching Use
Nch Power MOS FET
REJ03G0268-0100
Under development
Rev.1.00
Aug.20.2004
Features
•
•
•
•
Drive voltage : 10 V
VDSS : 450 V
rDS(ON) (max) : 0.73 Ω
ID : 10 A
Outline
LDPAK(S)-1
2, 4
4
1
1.
2.
3.
4.
1
2
3
Gate
Drain
Source
Drain
3
Applications
DC-DC, PDP, lamp ballast, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Rev.1.00, Aug.20.2004, page 1 of 6
Symbol
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
—
Ratings
450
±30
10
30
10
100
– 55 to +150
– 55 to +150
1.2
Unit
V
V
A
A
A
W
°C
°C
g
Conditions
VGS = 0 V
VDS = 0 V
L = 200 µH
Typical value
FS10VS-9A
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Rev.1.00, Aug.20.2004, page 2 of 6
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(th)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
Min.
450
±30
—
—
2.5
—
—
5.4
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
3.0
0.58
2.90
9.0
1100
120
25
20
30
140
40
1.5
—
Max.
—
—
±10
1.0
3.5
0.73
3.65
—
—
—
—
—
—
—
—
2.0
1.25
Unit
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
Test conditions
ID = 1 mA, VGS = 0 V
IG = ±100 µA, VDS = 0 V
VGS = ±25 V, VDS = 0 V
VDS = 450 V, VGS = 0 V
ID = 1 mA, VDS = 10 V
ID = 5 A, VGS = 10 V
ID = 5 A, VGS = 10 V
ID = 5 A, VDS = 10 V
VDS = 25 V, VGS = 0 V,
f = 1MHz
VDD = 200 V, ID = 5 A,
VGS = 10 V,
RGEN = RGS = 50 Ω
IS = 5 A, VGS = 0 V
Channel to case
FS10VS-9A
Performance Curves
Drain Power Dissipation Derating Curve
Maximum Safe Operating Area
2
Drain Current ID (A)
100
80
60
40
20
0
0
50
150
100
200
tw =10µs
1
10
7
5
3
2
100µs
100
7
5
3
2 Tc = 25°C
-1
1ms
DC
Single Pulse
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Case Temperature Tc (°C)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Output Characteristics (Typical)
20
16
10
Tc = 25°C
Pulse Test
6V
Drain Current ID (A)
10
7
5
3
2
10
PD = 100W
VGS = 20V,10V,8V
Drain Current ID (A)
Drain Power Dissipation PD (W)
120
12
8
5V
4
PD = 100W
8
VGS = 20V,10V,
8V,6V
5V
6
4
2
Tc = 25°C
Pulse Test
10
20
30
40
4
8
12
16
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
On-State Resistance vs.
Drain Current (Typical)
40
Tc = 25°C
Pulse Test
32
24
16
ID = 15A
8
0
0
0
0
50
10A
5A
4
8
12
16
Gate-Source Voltage VGS (V)
Rev.1.00, Aug.20.2004, page 3 of 6
20
Drain-Source On-State Resistance rDS(ON) (Ω)
Drain-Source On-State Voltage VDS(ON) (V)
0
0
20
2.0
Tc = 25°C
Pulse Test
1.6
1.2
VGS = 10V
20V
0.8
0.4
0 -1
10 2 3 5 7100 2 3 5 7101 2 3 5 7102
Drain Current ID (A)
FS10VS-9A
Forward Transfer Admittance vs.
Drain Current (Typical)
Tc = 25°C
VDS = 10V
Pulse Test
16
12
8
4
0
0
4
8
12
16
75°C
0
125°C
10
7
5
3
2
10
VDS = 10V
Pulse Test
-1
10
-1
2 3
5 7 10
0
2 3
5 7 10
Capacitance vs.
Drain-Source Voltage (Typical)
Switching Characteristics (Typical)
1
5
Ciss
2
10
7
5
3
2
Coss
101 Tch = 25°C
Crss
7 f = 1MHz
5 VGS = 0V
3
2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3
3
2
td(off)
2
10
7
5
tf
3
2
td(on)
tr
101 Tch = 25°C, VDD = 200V
7 VGS = 10V, RGEN = RGS = 50Ω
5 -1
0
1
10
2 3 5 7 10
2 3 5 7 10
Drain-Source Voltage VDS (V)
Drain Current ID (A)
Gate-Source Voltage vs.
Gate Charge (Typical)
Source-Drain Diode Forward
Characteristics (Typical)
40
Tch = 25°C
ID = 10A
16
12
Source Current IS (A)
Gate-Source Voltage VGS (V)
Tc = 25°C
101
7
5
3
2
Drain Current ID (A)
103
7
5
3
2
20
2
10
7
5
3
2
Gate-Source Voltage VGS (V)
3
2
Capacitance (pF)
20
Switching Time (ns)
Drain Current ID (A)
20
Forward Transfer Admittance | yfs | (S)
Transfer Characteristics (Typical)
VDS = 100V
200V
8
400V
4
32
Tc = 125°C
24
75°C
16
25°C
8
VGS = 0V
Pulse Test
0
0
20
40
60
80
Gate Charge Qg (nC)
Rev.1.00, Aug.20.2004, page 4 of 6
100
0
0
0.8
1.6
2.4
3.2
Source-Drain Voltage VSD (V)
4.0
On-State Resistance vs.
Channel Temperature (Typical)
1
10
7 VGS = 10V
ID = 5A
5 Pulse
Test
3
2
100
7
5
3
2
10
–1
–50
0
50
100
Threshold Voltage vs.
Channel Temperature (Typical)
Gate-Source Threshold Voltage VGS(th) (V)
Drain-Source On-State Resistance rDS(ON) (t°C)
Drain-Source On-State Resistance rDS(ON) (25°C)
FS10VS-9A
150
5.0
4.0
3.0
2.0
1.0
0
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
Transient Thermal Impedance Zth(ch-c) (°C/W)
Drain-Source Breakdown Voltage V(BR)DSS (t°C)
Drain-Source Breakdown Voltage V(BR)DSS (25°C)
1.4
–50
0
50
100
Transient Thermal Impedance Characteristics
1
10
7
5
3
2 D = 1.0
100 0.5
7
5 0.2
3
2 0.1
10
–1
0.05
0.02
0.01
Single Pulse
7
5
3
2
10–2 –4
–3
–2
–1
0
1
10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 7 10
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Switching Waveform
Vout
Monitor
Vin Monitor
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
VDS = 10V
ID = 1mA
90%
D.U.T.
RGEN
RL
Vin
Vout
RGS
10%
10%
10%
VDD
90%
td(on)
Rev.1.00, Aug.20.2004, page 5 of 6
tr
90%
td(off)
tf
FS10VS-9A
Package Dimensions
As of January, 2003
Unit: mm
(1.5)
7.8
7.0
+ 0.3
– 0.5
2.49 ± 0.2
0.2
0.1 +– 0.1
1.7
7.8
6.6
1.3 ± 0.15
10.0
(1.5)
8.6 ± 0.3
(1.4)
4.44 ± 0.2
10.2 ± 0.3
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.3 ± 0.2
Package Code
JEDEC
JEITA
Mass (reference value)
LDPAK (S)-(1)
—
—
1.30 g
Order Code
Lead form
Standard packing
Quantity
Standard order code
Surface-mounted type Taping
1000 Type name – T +Direction (1 or 2) +1
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 6 of 6
Standard order
code example
FS10VS-9A-T11
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