FAIRCHILD FDLL600

FDH / FDLL 600
COLOR BAND MARKING
DEVICE
FDLL600
1ST BAND 2ND BAND
RED
WHITE
LL-34
DO-35
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
W IV
Working Inverse Voltage
50
V
IO
Average Rectified Current
200
mA
IF
DC Forward Current
400
mA
if
Recurrent Peak Forward Current
600
mA
if(surge)
Tstg
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
1.0
4.0
-65 to +200
A
A
°C
TJ
Operating Junction Temperature
175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
ã 1997 Fairchild Semiconductor Corporation
Max
Units
FDH/FDLL 600
500
3.33
300
mW
mW/°C
°C/W
FDH600 / FDLL600
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
BV
Breakdown Voltage
IR = 5.0 µA
IR
Reverse Current
VF
Forward Voltage
CO
Diode Capacitance
VR = 50 V
VR = 50 V, TA = 150°C
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
VR = 0, f = 1.0 MHz
100
100
650
790
860
920
1.0
2.5
nA
µA
mV
mV
mV
mV
V
pF
TRR
Reverse Recovery Time
IF = IR = 10 mA, Irr = 1.0 mA,
RL = 100 Ω
IF = IR = 200 mA, Irr = 20 mA,
RL = 100 Ω
4.0
nS
6.0
nS
75
V
FDH600 / FDLL600
High Conductance Ultra Fast Diode
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Definition
Advance Information
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This datasheet contains the design specifications for
product development. Specifications may change in
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