Infineon IKA15N60T Low loss duopack : igbt in trenchstop and fieldstop technology with soft, fast recovery anti-parallel emcon he diode Datasheet

IKA15N60T
q
TrenchStop® Series
IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack :
•
•
•
•
•
•
•
•
•
C
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
1
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
E
P-TO-220-3-31
(TO-220 FullPak)
Applications:
• Air Condition
• Inverters
Type
IKA15N60T
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
Package
600V
15A
1.5V
175°C
K15T60
P-TO-220-3-31
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
DC collector current, limited by Tjmax
IC
Value
Unit
600
V
A
TC = 25°C
14.7
TC = 100°C
8.9
Pulsed collector current, tp limited by Tjmax
ICpul s
45
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
-
45
Diode forward current, limited by Tjmax
IF
TC = 25°C
15.5
TC = 100°C
9
Diode pulsed current, tp limited by Tjmax
IFpul s
45
Gate-emitter voltage
VGE
±20
V
tSC
5
µs
Power dissipation TC = 25°C
Ptot
35.7
W
Operating junction temperature
Tj
-40...+175
°C
Storage temperature
Solder temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Isolation Voltage
Tstg
-55...+175
2)
Short circuit withstand time
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits:
Power Semiconductors
260
Visol
2500
Vr m s
<1000; time between short circuits: >1s.
1
Rev. 2.1 July 06
IKA15N60T
q
TrenchStop® Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
4.2
K/W
RthJCD
4.8
RthJA
80
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
T j =2 5 °C
-
1.5
2.05
T j =1 7 5° C
-
1.9
-
T j =2 5 °C
-
1.65
2.05
T j =1 7 5° C
-
1.6
-
4.1
4.9
5.7
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 0 .2m A
Collector-emitter saturation voltage
VCE(sat)
VF
Diode forward voltage
V
V G E = 15 V , I C = 15 A
V G E = 0V , I F = 1 5 A
Gate-emitter threshold voltage
VGE(th)
I C = 21 0µ A , V C E = V G E
Zero gate voltage collector current
ICES
V C E = 60 0 V ,
V G E = 0V
µA
T j =2 5 °C
-
-
40
T j =1 7 5° C
-
-
1000
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 15 A
-
8.7
-
S
Integrated gate resistor
RGint
-
Ω
Dynamic Characteristic
Input capacitance
Ciss
V C E = 25 V ,
-
860
-
Output capacitance
Coss
V G E = 0V ,
-
55
-
Reverse transfer capacitance
Crss
f= 1 MH z
-
24
-
Gate charge
QGate
V C C = 48 0 V, I C =1 5 A
-
87
-
nC
-
7
-
nH
-
137.5
-
A
pF
V G E = 15 V
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
1)
IC(SC)
V G E = 15 V ,t S C ≤ 5 µs
V C C = 4 0 0 V,
T j ≤ 150°C
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.1 July 06
IKA15N60T
q
TrenchStop® Series
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
17
-
-
11
-
-
188
-
-
50
-
-
0.22
-
-
0.35
-
-
0.57
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =2 5 °C ,
V C C = 40 0 V, I C = 1 5 A,
V G E = 0 /1 5 V,
R G = 15 Ω,
1)
L σ =1 5 4n H,
1)
C σ = 3 9p F
Energy losses include
“tail” and diode
reverse recovery.
Diode reverse recovery time
trr
T j =2 5 °C ,
-
34
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 1 5 A,
-
0.24
-
µC
Diode peak reverse recovery current
Irrm
d i F / d t =8 2 5 A/ µs
-
10.4
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
718
-
A/µs
ns
mJ
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
17
-
-
15
-
-
212
-
-
79
-
-
0.34
-
-
0.47
-
-
0.81
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =1 7 5° C,
V C C = 40 0 V, I C = 1 5 A,
V G E = 0/ 15 V ,
RG= 15 Ω
1)
L σ =1 5 4n H,
1)
C σ = 3 9p F
Energy losses include
“tail” and diode
reverse recovery.
Diode reverse recovery time
trr
T j =1 7 5° C
-
140
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 1 5 A,
-
1.0
-
µC
Diode peak reverse recovery current
Irrm
d i F / d t =8 2 5 A/ µs
-
14.7
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
495
-
A/µs
ns
mJ
Anti-Parallel Diode Characteristic
1)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.1 July 06
IKA15N60T
q
TrenchStop® Series
tp=2µs
30A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
TC=80°C
20A
TC=110°C
Ic
10A
100Hz
50µs
1A
1ms
10ms
DC
Ic
0A
10Hz
10µs
10A
0.1A
1kHz
10kHz
100kHz
1V
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 15Ω)
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
30W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
35W
25W
20W
15W
10W
10A
5A
5W
0W
25°C
50°C
75°C
100°C
125°C
0A
25°C
150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
Power Semiconductors
4
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Rev. 2.1 July 06
TrenchStop® Series
IKA15N60T
q
40A
40A
30A
35A
V GE =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
35A
15V
25A
13V
11V
20A
9V
15A
7V
10A
5A
15V
13V
25A
11V
20A
9V
15A
7V
10A
0A
0V
1V
2V
3V
0V
35A
30A
25A
20A
15A
10A
T J = 1 7 5 °C
5A
2 5 °C
0V
2V
4V
6V
8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
Power Semiconductors
1V
2V
3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
30A
5A
0A
0A
V GE =20V
2.5V
IC =30A
2.0V
1.5V
IC =15A
1.0V
IC =7.5A
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.1 July 06
TrenchStop® Series
IKA15N60T
q
t d(off)
t d(off)
tf
t d(on)
10ns
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
100ns
tf
tr
t d(on)
tr
1ns
0A
5A
10A
15A
20A
10ns
2 5A
10Ω
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 15Ω,
Dynamic test circuit in Figure E)
20Ω
30Ω
40Ω
50Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 15A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
t d(off)
100ns
tf
t d(on)
10ns
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
6V
m ax.
typ.
5V
4V
m in.
3V
2V
1V
tr
25°C
50°C
75°C
0V
-50°C
100°C 125°C 15 0°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 15A, RG=15Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.21mA)
6
Rev. 2.1 July 06
TrenchStop® Series
1.6 mJ
*) E on an d E ts in c lu d e lo s s es
1 .6m J
*) E on and E ts include losses
due to diode recovery
E ts *
1 .2m J
E off
0 .8m J
E on *
0 .4m J
E, SWITCHING ENERGY LOSSES
d u e to d io de re c ov e ry
E, SWITCHING ENERGY LOSSES
IKA15N60T
q
E ts*
1.4 mJ
1.2 mJ
1.0 mJ
0.8 mJ
0.6 mJ
E off
0.4 mJ
0 .0m J
0A
5A
10A
1 5A
20 A
0.2 mJ
25 A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 15Ω,
Dynamic test circuit in Figure E)
E on*
0Ω 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 15A,
Dynamic test circuit in Figure E)
0.9mJ
1.2m J
*) E on and E ts include losses
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
*) E on and E ts include losses
due to diode recovery
0.8mJ
0.7mJ
0.6mJ
E ts*
0.5mJ
0.4mJ E off
0.3mJ
0.8m J
E ts *
0.6m J
E off
0.4m J
0.2m J
E on *
E on*
0.2mJ
25°C
due to diode recovery
1.0m J
50°C
0.0m J
300V
75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 15A, RG = 15Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
350V
400V
450V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 15A, RG = 15Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.1 July 06
IKA15N60T
q
TrenchStop® Series
15V
C iss
120V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
1nF
480V
10V
100pF
C oss
5V
C rss
0V
0nC
20nC
40nC
60nC
80nC
10pF
100nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=15 A)
0V
10V
20V
30V
40V
50V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
IC(sc), short circuit COLLECTOR CURRENT
12µs
200A
150A
100A
50A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE ≤ 400V, Tj ≤ 150°C)
Power Semiconductors
10µs
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
8
Rev. 2.1 July 06
IKA15N60T
q
TrenchStop® Series
D=0.5
0
10 K/W
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
0.2
0.1
0.05
0.02
-1
10 K/W
τ, (s)
R,(K/W)
1.634
1.541
0.423
0.223
0.236
0.122
4.13
1.00
3.83*10-2
3.26*10-3
4.82*10-4
6.64*10-5
R1
R2
0.01
single pulse
C 1 = τ 1 /R 1
C 2 = τ 2 /R 2
0
10 K/W
0.2
0.1
0.05
0.02
0.01
-1
10 K/W
R,(K/W)
1.7757
1.4115
0.5014
0.3862
0.445
0.3188
τ, (s)
1.11*10-1
2.552*10-2
3.914*10-3
4.92*10-4
7.19*10-5
7.4*10-6
R1
single pulse
6
R2
C 1 = τ 1 /R 1
C 2 = τ 2 /R 2
-2
10µs 100µs 1ms
10ms 100ms
1s
10 K/W
10s
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
TJ=175°C
160ns
120ns
TJ=25°C
80ns
40ns
600A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=15A,
Dynamic test circuit in Figure E)
Power Semiconductors
9
10s
0.8µC
0.6µC
T J=25°C
0.4µC
0.2µC
0.0µC
400A/µs
800A/µs
1s
T J=175°C
1.0µC
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME
10ms 100ms
tP, PULSE WIDTH
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
200ns
0ns
400A/µs
10µs 100µs 1ms
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 15A,
Dynamic test circuit in Figure E)
Rev. 2.1 July 06
TrenchStop® Series
T J =175°C
-700A/µs
14A
12A
10A
T J =25°C
8A
6A
4A
2A
0A
400A/µs
600A/µs
dirr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
16A
IKA15N60T
q
T J=175°C
-600A/µs
-500A/µs
T J=25°C
-400A/µs
-300A/µs
-200A/µs
-100A/µs
0A/µs
400A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 15A,
Dynamic test circuit in Figure E)
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=15A,
Dynamic test circuit in Figure E)
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
40A
30A
20A
TJ=25°C
175°C
10A
0A
0V
1V
I F =30A
1.5V
15A
10
7.5A
1.0V
0.5V
0.0V
0°C
2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
Power Semiconductors
2.0V
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
Rev. 2.1 July 06
TrenchStop® Series
IKA15N60T
q
PG-TO220-3-31
Please refer to mounting instructions
Power Semiconductors
11
Rev. 2.1 July 06
IKA15N60T
q
TrenchStop® Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
IF
tS
QS
Ir r m
tr r
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
an d Stray capacity C σ =40pF.
Figure B. Definition of switching losses
Power Semiconductors
12
Rev. 2.1 July 06
TrenchStop® Series
IKA15N60T
q
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 7/10/06.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.1 July 06
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