PHILIPS BLT92 Uhf power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLT92/SL
UHF power transistor
Product specification
May 1989
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION
NPN silicon planar epitaxial transistor
primarily intended for use in handheld
radio stations in the 900 MHz
communications band.
BLT92/SL
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common-emitter class-B circuit
MODE OF OPERATION
CW (class-B)
VCE
(V)
f
(MHz)
PL
(W)
Gp
(dB)
ηC
(%)
7.5
900
3.0
> 7.0
> 50
This device has been designed
specifically for class-B operation.
PIN CONFIGURATION
FEATURES
• internal input matching capacitor
for a high power gain
• gold metallization ensures
excellent reliability
handbook, halfpage
The transistor has a 4-lead studless
envelope with a ceramic cap
(SOT122D). All leads are isolated
from the mounting base.
4
1
3
PINNING
2
1 = collector
MSB055
2 = emitter
3 = base
Fig.1 Simplified outline, SOT122D.
4 = emitter
PRODUCT SAFETY This device incorporates beryllium oxide (BeO), the dust of which is toxic. The device is
entirely safe provided that the internal BeO disc is not damaged.
May 1989
2
Philips Semiconductors
Product specification
UHF power transistor
BLT92/SL
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
VCBO
max.
20 V
Collector-emitter voltage (open base)
VCEO
max.
10 V
Emitter-base voltage (open collector)
VEBO
max.
3.0 V
DC or average
IC; IC(AV)
max.
1.2 A
(peak value); f > 800 MHz
ICM
max.
3.6 A
Ptot
max.
10 W
Collector current
Total power dissipation
at Tamb < 120 °C; f > 800 MHz
Storage temperature range
Tstg
−65 to +150 °C
Operating junction temperature
Tj
max.
200 °C
THERMAL RESISTANCE
Dissipation = 10 W; Tmb = 25 °C
From junction to mounting base (f > 800 MHz)
Rth j-mb(RF)
max.
MDA297
20
handbook, halfpage
Ptot
(W)
16
(1)
12
(2)
8
4
0
0
40
80
120
160
200
Tmb (°C)
(1) Short-time RF operation during mismatch (f > 800 MHz).
(2) Continuous RF operation (f > 800 MHz).
Fig.2 Total power dissipation as a function of temperature.
May 1989
3
6.0 K/W
Philips Semiconductors
Product specification
UHF power transistor
BLT92/SL
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-base breakdown voltage
open emitter; IC = 10 mA
V(BR)CBO
>
20 V
V(BR)CEO
>
10 V
V(BR)EBO
>
3.0 V
ICES
<
5.0 mA
ESBR
>
1.0 mJ
hFE
>
25
Cc
typ.
11 pF
Cre
typ.
6.0 pF
Cc-mb
typ.
1.2 pF
Collector-emitter breakdown voltage
open base; IC = 20 mA
Emitter-base breakdown voltage
open collector; IE = 2 mA
Collector cut-off current
VBE = 0; VCE = 10 V
Second breakdown energy
L = 25 mH; f = 50 Hz; RBE = 10 Ω
DC current gain
IC = 600 mA; VCE = 5 V
Collector capacitance at f = 1 MHz
IE = ie = 0; VCB = 7.5 V
Feedback capacitance at f = 1 MHz
IC = 0; VCE = 7.5 V
Collector-mounting base capacitance
MDA298
24
handbook, halfpage
Cc
(pF)
16
8
0
0
2
4
6
8
10
VCB (V)
Fig.3 Collector capacitance as a function of collector-base voltage; f = 1 MHz; IE = ie = 0; typical values.
May 1989
4
Philips Semiconductors
Product specification
UHF power transistor
BLT92/SL
APPLICATION INFORMATION
RF performance in CW operation (common-emitter circuit; class-B); f = 900 MHz; Tmb = 25 °C
MODE OF OPERATION
Class-B; CW
VCE
(V)
PL
(W)
7.5
3.0
ηC
(%)
Gp
(dB)
>
typ.
>
typ.
7.0
8.5
,,,,,,,,
,,,,,,,
,,,,,,,, ,,,,,,,
50
57
handbook, full pagewidth
50 Ω
C4
L2
L1
C1
C2
L3
D.U.T.
C5
L5
L4
C3
C6
C9
L6
C7
L7
C8
C10
C13
C14
C11
L8
L10
R1
L9
C12
R2
+VCC
MDA299
Fig.4 Class-B test circuit at f = 900 MHz.
List of components:
C1
= C2 = C8 = C10 = 1.4 to 5.5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C3
= C6 = C7 = 3.3 pF multilayer ceramic chip capacitor(1)
C4
= C5 = C9 = 5.6 pF multilayer ceramic chip capacitor(1)
C11
= C12 = C13 = 180 pF multilayer ceramic chip capacitor
C14 = 1 µF (35 V) tantalum capacitor
L1
= 50 Ω stripline (25 mm × 2.4 mm)
L2
= 50 Ω stripline (11 mm × 2.4 mm)
L3
= L4 = 25 Ω stripline (11.5 mm × 6.0 mm)
L5
= 50 Ω stripline (7.0 mm × 2.4 mm)
L6
= 50 Ω stripline (27.0 mm × 2.4 mm)
L7
= 4 turns closely wound enamelled Cu wire (0.4 mm), int. dia;. 3 mm, with ferrite beat
(cat. no. 4330 830 32221) over the coldside lead
L8
= 1 turn Cu wire (1.0 mm); int. dia. 5.5 mm; length 2 mm; leads 2 × 5 mm
L9
= L10 = Ferroxcube wideband HF choke, grade 3B (cat. no. 4312 020 36642)
R1
= R2 = 10 Ω ± 5%; 0.25 W metal film resistor
The striplines on a double Cu-clad printed circuit board with PTFE fibreglass dielectric (εr = 2.2);
thickness 1/32 inch; thickness of copper-sheet 2 × 35 µm.
Note
1. American Technical Ceramics capacitor type 100 A or capacitor of same quality.
May 1989
5
50 Ω
Philips Semiconductors
Product specification
UHF power transistor
BLT92/SL
135 mm
handbook, full pagewidth
70 mm
+VCC
L8
L5
C8
R2
C7
R1
C1
C2
L1
C4
L2
C6
L4
L7
C13
C10 C11
C14
L3
C3
L9
L6
C5
L10
C9
C12
MDA300
Fig.5 Printed circuit board and component layout for 900 MHz class-B test circuit.
Note:
The circuit and the components are on one side of the PTFE fibreglass board; the other side is un-etched copper serving
as groundplane. Earth connections are made by hollow rivets and also by fixing-screws and copper straps around the
board and under the emitters to provide a direct contact between the copper on the component side and the groundplane.
May 1989
6
Philips Semiconductors
Product specification
UHF power transistor
BLT92/SL
MDA301
5
MDA302
10
Gp
handbook, halfpage
handbook, halfpage
PL
(W)
4
Gp
100
ηC
(%)
(dB)
8
80
Gp
ηC
3
6
2
4
40
1
2
20
0
0
0.4
0.8
PS (W)
60
ηC
0
1.2
0
0
1
2
3
4
5
PL (W)
f = 900 MHz; Tmb = 25 °C; class-B operation; typical values.
 VCE = 7.5 V
− − − VCE = 5.0 V
f = 900 MHz; Tmb = 25 °C; class-B operation; typical values.
 VCE = 7.5 V
− − − VCE = 5.0 V
Fig.6
Fig.7
Load power as a function of source power.
RUGGEDNESS
The device is capable of withstanding a full load mismatch
(VSWR = 50; all phases) at rated load power up to a
supply voltage of 9.0 V at Tmb = 25 °C.
May 1989
7
Power gain and efficiency as a function of
load power.
Philips Semiconductors
Product specification
UHF power transistor
BLT92/SL
MDA303
10
MDA304
5
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
4
xi
8
RL
ri
6
3
4
2
XL
2
1
0
750
800
850
900
0
750
950
1000
f (MHz)
800
850
900
950
1000
f (MHz)
VCE = 7,5 V; PL = 3 W; f = 800 - 960 MHz; Tmb = 25 °C;
class-B operation; typical values.
VCE = 7,5 V; PL = 3 W; f = 800 - 960 MHz; Tmb = 25 °C;
class-B operation; typical values.
Fig.8
Fig.9
Input impedance as a function of frequency
(series components).
MDA305
10
handbook, halfpage
Gp
(dB)
8
6
4
2
0
750
800
850
900
950
1000
f (MHz)
VCE = 7,5 V; PL = 3 W; f = 800 - 960 MHz; Tmb = 25 °C;
class-B operation; typical values.
Fig.10 Power gain as a function of frequency.
May 1989
8
Load impedance as a function of frequency
(series components).
Philips Semiconductors
Product specification
UHF power transistor
BLT92/SL
PACKAGE OUTLINE
Studless ceramic package; 4 leads
SOT122D
D
A
Q
c
D2
H
b
α
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D2
H
L
Q
α
mm
4.17
3.27
5.85
5.58
0.18
0.14
7.50
7.23
7.24
6.98
27.56
25.78
9.91
9.14
1.58
1.27
90°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-04-18
SOT122D
May 1989
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
UHF power transistor
BLT92/SL
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
May 1989
10
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