MIC94001 Micrel MIC94001 P-Channel MOSFET Not Recommended for New Designs General Description Features The MIC94001 is a silicon gate P-channel MOSFET designed for low on-resistance, high-side switch applications. The MIC94001 has a maximum on-resistance of 0.4Ω at 4.5V gate-to-source voltage. Improved ESD protection is provided by the gate protection network shown in the schematic diagram. The MIC94001 is supplied in a low-profile version of the 8-lead SOIC package. The MIC94001 die can be assembled in a 4-terminal configuration with the body not shorted to the source for use in analog switch applications. Contact the factory for more information. • 15V minimum drain-to-source breakdown • 0.4Ω maximum on-resistance at 4.5V gate-to-source • Functional at 2.7V gate-to-source • 0.063" maximum height Applications • • • • High-side switch Power management Stepper motor control 1.8" PCMCIA disk-drive VCC switch Ordering Information Part Number Temperature Range* Package –55°C to +150°C 8-lead SOIC† MIC94001BLM * Operating Junction Temperature † Low Profile Leads, see Package Information Schematic Information Pin Configuration Source Gate Drain Schematic Symbol S 1 NC Drain 8 2 Source Drain 7 3 Source Drain 6 4 Gate 6 Drain 5 8-lead Low-Profile SOIC Package (LM) G D Schematic Diagram Typical Application Package Information 0.026 (0.65) MAX) MIC94001 0.154 (3.90) Load +5V Pin 1 On Off 74HC04 0.050 (1.27) 0.016 (0.40) TYP TYP 0.193 (4.90) 45° Power Switch Application 3°–6° 0.063 (1.60) MAX 0.057 (1.45) 0.049 (1.25) Patent 5,355,008 August 1998 6-37 0.197 (5.0) 0.189 (4.8) SEATING PLANE 0.244 (6.20) 0.228 (5.80) MIC94001 Micrel Absolute Maximum Ratings Voltage and current values are negative. Signs not shown for clarity. Drain-to-Source Voltage ................................................ 15V Gate-to-Source Voltage ................................................ 15V Continuous Drain Current TA = 25°C ................................................................. 1.6A TA = 100°C .................................................................. 1A Operating Juction Temperature ................. –55°C to +150° Storage Temperature ............................... –55°C to +150°C Electrical Characteristics TA = 25°C unless noted. Total Power Dissipation TA = 25°C ................................................................... 1W TA = 100°C .............................................................. 0.4W Thermal Resistance θJA ...................................................................................... 125°C/W θJC ........................................................................................ 76°C/W Lead Temperature 1/16" from case, 10s ........................................... +300°C All values are negative. Signs not shown for clarity. Symbol Parameter Condition Min VBDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 15 VGS Gate Threshold Voltage VDS = VGS, ID = 250µA 1 IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current Typ Max Units V 3 V VDS = 0V, VGS = 15V, Note 2 100 nA VDS = 15V, VGS = 0V 25 µA VDS = 15V, VGS = 0V, TJ = 125°C 250 µA ID(ON) On-State Drain Current VDS ≥ 10V, VGS = 10V, Note 1 5.5 RDS(ON) Drain-Source On-State Resist. VGS = 4.5V, ID = 50mA 0.35 gFS Forward Transconductance VDS = 15V, ID = 1A, Note 1 0.7 A 0.40 Ω S Note 1: Pulse Test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2% Note 2: ESD gate protection diode conducts during positive gate-to-source voltage excursions. On Resistance vs. Drain Current 2000 0.40 1800 0.35 1600 VGS = 4.5V 1400 0.30 1200 ID (mA) RDS(ON) (Ω) Drain Characteristics 0.45 0.25 0.15 VGS = 3.0 800 400 0.05 200 0.4 0.8 1.2 1.6 ID (A) Note 1 VGS = 2.5 VGS = 2.0 600 0.10 0.00 0.0 VGS = 3.5 1000 VGS = 10V 0.20 VGS = 4.0 0 0.0 2.0 6-38 VGS = 1.5 2.5 5.0 7.5 10.0 12.5 15.0 VDS (V) Note 1 August 1998