ON MMBT3904TT1G General purpose transistor Datasheet

MMBT3904TT1
General Purpose Transistors
NPN Silicon
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT-416/SC-75 package which is
designed for low power surface mount applications.
Features
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GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
•Pb-Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
VCEO
40
Vdc
Collector - Base Voltage
VCBO
60
Vdc
Emitter - Base Voltage
VEBO
6.0
Vdc
IC
200
mAdc
Collector Current - Continuous
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR-4 Board (Note 1) @TA = 25°C
Derated above 25°C
Thermal Resistance, Junction- to- Ambient
(Note 1)
Total Device Dissipation,
FR-4 Board (Note 2) @TA = 25°C
Derated above 25°C
Symbol
Max
Unit
200
1.6
mW
mW/°C
600
°C/W
PD
RqJA
3
2
SOT-416/SC-75
CASE 463
STYLE 1
1
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction- to- Ambient
(Note 2)
RqJA
400
°C/W
Junction and Storage Temperature Range
TJ, Tstg
- 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ Minimum Pad
2. FR-4 @ 1.0 × 1.0 Inch Pad
MARKING DIAGRAM
AM MG
G
1
AM = Device Code
M = Date Code*
G
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT3904TT1
SOT-416
3000 Tape & Reel
MMBT3904TT1G
SOT-416
(Pb-Free)
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 4
1
Publication Order Number:
MMBT3904TT1/D
MMBT3904TT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
-
60
-
6.0
-
-
50
-
50
40
70
100
60
30
300
-
-
0.2
0.3
0.65
-
0.85
0.95
300
-
-
4.0
-
8.0
1.0
10
0.5
8.0
100
400
1.0
40
-
5.0
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
-
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hie
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hre
Small-Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hfe
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hoe
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
NF
MHz
pF
pF
kW
X 10- 4
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = -0.5 Vdc)
MMBT3904TT1
td
-
35
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
MMBT3904TT1
tr
-
35
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
MMBT3904TT1
ts
-
200
Fall Time
(IB1 = IB2 = 1.0 mAdc)
MMBT3904TT1
tf
-
50
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
ns
ns
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
MMBT3904TT1
1.0
D = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 1. Normalized Thermal Response
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
275
10 < t1 < 500 ms
DUTY CYCLE = 2%
+3 V
t1
+10.9 V
275
10 k
10 k
0
-0.5 V
CS < 4 pF*
< 1 ns
CS < 4 pF*
1N916
-9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 2. Delay and Rise Time
Equivalent Test Circuit
Figure 3. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10
5000
2000
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
VCC = 40 V
IC/IB = 10
3000
7.0
Cibo
3.0
Cobo
2.0
1000
700
500
QT
300
200
QA
100
70
50
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 4. Capacitance
Figure 5. Charge Data
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3
200
MMBT3904TT1
500
500
IC/IB = 10
200
100
70
50
tr @ VCC = 3.0 V
30
20
40 V
10
7
5
15 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
100
70
50
30
20
10
7
5
2.0 V
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn-On Time
Figure 7. Rise Time
500
200
500
300
200
IC/IB = 20
t′s = ts - 1/8 tf
IB1 = IB2
IC/IB = 10
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
100
70
50
t f , FALL TIME (ns)
t s′ , STORAGE TIME (ns)
VCC = 40 V
IC/IB = 10
300
t r, RISE TIME (ns)
TIME (ns)
300
200
IC/IB = 20
IC/IB = 10
30
20
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
100
70
50
IC/IB = 10
30
20
10
7
5
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 8. Storage Time
Figure 9. Fall Time
200
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
14
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
2
0
0.1
SOURCE RESISTANCE = 500 W
IC = 100 mA
0.2
0.4
1.0
2.0
IC = 1.0 mA
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
4.0
10
20
40
0
0.1
100
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 10. Noise Figure
Figure 11. Noise Figure
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4
40
100
MMBT3904TT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE ( m mhos)
300
h fe , CURRENT GAIN
200
100
70
50
50
20
10
5
2
1
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
Figure 12. Current Gain
10
5.0
10
10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
h ie , INPUT IMPEDANCE (k OHMS)
5.0
Figure 13. Output Admittance
20
10
5.0
2.0
1.0
0.5
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
Figure 14. Input Impedance
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 15. Voltage Feedback Ratio
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
MMBT3904WT1
+25°C
1.0
0.7
-55 °C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IC, COLLECTOR CURRENT (mA)
Figure 16. DC Current Gain
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5
20
30
50
70
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
MMBT3904TT1
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 17. Collector Saturation Region
1.0
1.2
TJ = 25°C
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
qVC FOR VCE(sat)
0
-55 °C TO +25°C
-0.5
-55 °C TO +25°C
-1.0
+25°C TO +125°C
0.2
0
+25°C TO +125°C
0.5
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
1.0
qVB FOR VBE(sat)
-1.5
1.0
2.0
5.0
10
20
50
100
-2.0
200
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 18. “ON” Voltages
Figure 19. Temperature Coefficients
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6
180 200
MMBT3904TT1
PACKAGE DIMENSIONS
SC-75/SOT-416
CASE 463-01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
-E2
3
b 3 PL
0.20 (0.008)
e
DIM
A
A1
b
C
D
E
e
L
HE
-D-
1
M
D
0.20 (0.008) E
HE
C
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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MMBT3904TT1/D
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