ON MMBT2222AWT1G General purpose transistor Datasheet

MMBT2222AWT1
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
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Features
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
40
Vdc
Collector −Base Voltage
VCBO
75
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
IC
600
mAdc
Collector Current − Continuous
2
EMITTER
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
TA = 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
150
mW
RqJA
833
°C/W
TJ, Tstg
−55 to +150
°C
1
2
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
P1 M G
G
1
P1 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MMBT2222AWT1G
Package
Shipping†
SC−70 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 5
1
Publication Order Number:
MMBT2222AWT1/D
MMBT2222AWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
75
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
IBL
−
20
nAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
ICEX
−
10
nAdc
35
50
75
100
40
−
−
−
300
−
−
−
0.3
1.0
0.6
−
1.2
2.0
fT
300
−
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
30
pF
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hie
0.25
1.25
kW
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hre
−
4.0
X 10− 4
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hfe
75
375
−
Output Admittance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hoe
25
200
mmhos
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz)
NF
−
4.0
dB
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
10
tr
−
25
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
60
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
HFE
DC Current Gain (Note 1)
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector −Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
ns
ns
MMBT2222AWT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
+16 V
200
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
+16 V
200
0
0
-2 V
1 kW
< 2 ns
1k
-14 V
CS* < 10 pF
< 20 ns
CS* < 10 pF
1N914
-4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
hFE , DC CURRENT GAIN
1000
700
500
TJ = 125°C
300
200
25°C
100
70
50
-55°C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
200
300
500 700 1.0 k
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
50
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
Figure 4. Collector Saturation Region
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3
3.0
5.0
10
20
30
MMBT2222AWT1
200
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
t′s = ts - 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
500
20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
100 mA, RS = 2.0 kW
50 mA, RS = 4.0 kW
6.0
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
500
10
8.0
4.0
IC = 50 mA
100 mA
500 mA
1.0 mA
6.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
Ceb
10
7.0
5.0
Ccb
3.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
f, FREQUENCY (kHz)
20
0.2 0.3
0
50
50 100
20
30
CAPACITANCE (pF)
300
Figure 6. Turn −Off Time
10
2.0
0.1
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
300
t, TIME (ns)
t, TIME (ns)
100
70
50
Figure 9. Capacitances
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 10. Current−Gain Bandwidth Product
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4
MMBT2222AWT1
0.1
−55°C
25°C
0.001
0.01
0.1
1.1
1.0
0.9
1
25°C
0.7
0.6
150°C
0.5
0.4
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
+0.5
VCE = 1 V
0
0.9
COEFFICIENT (mV/ °C)
1.0
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
RqVC for VCE(sat)
-0.5
-1.0
-1.5
RqVB for VBE
-2.0
0.3
0.001
0.01
0.1
-2.5
1
0.1 0.2
0.5
IC, COLLECTOR CURRENT (A)
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 14. Temperature Coefficients
Figure 13. Base Emitter Voltage vs. Collector
Current
10
10 ms
100 ms
1
1 ms
1s
Thermal Limit
IC (A)
0.2
−55°C
0.8
0.3
0.2
1.2
1.1
IC/IB = 10
1.2
150°C
0.01
VBE(on), BASE−EMITTER VOLTAGE (V)
1.3
IC/IB = 10
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1
0.1
0.01
0.001
Single Pulse Test
@ TA = 25°C
0.01
0.1
1
10
VCE (Vdc)
Figure 15. Safe Operating Area
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5
100
500
MMBT2222AWT1
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE M
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
2
b
e
0.05 (0.002)
c
A2
A
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L
A1
MIN
0.80
0.00
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT2222AWT1/D
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