Fairchild FJB3307D High voltage fast switching npn power transistor Datasheet

FJB3307D
High Voltage Fast Switching NPN Power Transistor
Features
• Built-in Diode between Collector and Emitter
• Suitable for Electronic Ballast and Switch Mode Power Supplies
Internal Schematic Diagram
C
B
1
D2-PAK
1.Base 2.Collector
3.Emitter
E
Absolute Maximum Ratings
Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
8
A
ICP
* Collector Current (Pulse)
16
A
IB
Base Current (DC)
4
A
IBP
* Base Current (Pulse)
8
A
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to 150
°C
Value
Units
1.72
80
W
W
* Pulse Test: PW = 300μs, Duty Cycle = 2% Pulsed
Thermal Characteristics
Symbol
Parameter
PD
Total Device Dissipation
Ta = 25°C
Tc = 25°C
Rθja
Thermal Resistance, Junction to Ambient
72.5
°C/W
Rθjc
Thermal Resistance, Junction to Case
1.56
°C/W
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
www.fairchildsemi.com
1
FJB3307D — High Voltage Fast Switching NPN Power Transistor
March 2012
Symbol
Ta = 25°C unless otherwise noted
Parameter
Conditions
Typ.
Max. Units
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0
BVEBO
Emitter-Base Breakdown Voltage
IE = 500μA, IC = 0
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 5A, IB = 1A, Ta = 100°C
IC = 8A, IB = 2A
1
2
3
3
V
V
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 5A, IB = 1A, Ta = 100°C
1.2
1.6
2
V
V
V
VF
Diode Forward Voltage
IC = 3A
2.5
V
Cob
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
tSTG
Storage Time
tF
tSTG
tF
Fall Time
Storage Time
Fall Time
IC = 500μA, IE = 0
Min.
BVCBO
700
V
400
V
9
V
1
8
5
mA
40
30
60
pF
3
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A, RL = 50Ω
VCC = 30V, IC = 5A, L=200μH
IB1=1A, RBB = 0Ω,
VBE(OFF)= -5V,
VCLAMP = 250V
μs
0.7
μs
2.3
μs
150
ns
* Pulse test: PW = 300μs, Duty Cycle = 2% Pulsed
hFE Classification
Classification
H1
H2
hFE1
15 ~ 28
26 ~ 39
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
www.fairchildsemi.com
2
FJB3307D — High Voltage Fast Switching NPN Power Transistor
Electrical Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
5.0
100
Ta = 125 C
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
Ta = 75 C
o
IB=250mA
4.0
IB=200mA
3.5
IB=150mA
3.0
IB=100mA
2.5
2.0
IB=50mA
1.5
VCE = 5V
o
IB=300mA
4.5
o
Ta = 25 C
o
Ta = - 25 C
10
1.0
0.5
0.0
1.2
2.4
3.6
4.8
6.0
7.2
8.4
9.6
10.8
1
0.1
12.0
1
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10
100
IC = 5 IB
VBE(sat)[V], SATURATION VOLTAGE
VCE(sat),[V] SATURATION VOLTAGE
IC = 5 IB
10
o
Ta = 125 C
1
o
Ta = 75 C
o
Ta = 25 C
0.1
o
Ta = - 25 C
0.01
0.01
0.1
1
o
Ta = 25 C
o
Ta = - 25 C
1
o
Ta = 75 C
o
Ta = 125 C
0.1
0.01
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Storage Time (Resistive Load)
1000
5.0
f = 1MHz, IE = 0
IC = 5 IB
VCC = 125V
4.5
o
TSTG [μS], STORAGE TIME
COB [pF], OUTPUT CAPACITANCE
10
IC [A], COLLECTOR CURRENT
100
Ta = 25 C
4.0
3.5
3.0
2.5
2.0
1.5
10
1
10
1.0
100
1
VCB [V], COLLECTOR-BASE VOLTAGE
3
4
5
6
7
8
IC [A], COLLECTOR CURRENT
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
2
www.fairchildsemi.com
3
FJB3307D — High Voltage Fast Switching NPN Power Transistor
Typical Performance Characteristics
Figure 7. Fall Time (Resistive Load)
Figure 8. Storage Time (Inductive Load)
400
3.00
IC = 5 IB
VCC = 125V
350
IC = 5 IB1 = 2.5 IB2, VCC = 30V,
L = 200μH, VBE(OFF) = -5V,
2.75
o
o
TF [nS], FALL TIME
TSTG [μS], STORAGE TIME
Ta = 25 C
300
250
200
150
100
50
VCLAMP = 250V, Ta = 25 C
2.50
2.25
2.00
1.75
1.50
1.25
0
1.00
1
2
3
4
5
6
7
8
1
2
3
IC [A], COLLECTOR CURRENT
Figure 9. Fall Time (Inductive Load)
5
6
7
8
150
175
Figure 10. Power Derating
100
75.0
IC = 5 IB1 = 2.5 IB2, VCC = 30V,
L = 200μH, VBE(OFF) = -5V,
62.5
90
o
PD[W], POWER DISSIPATION
TF [nS], FALL TIME
4
IC [A], COLLECTOR CURRENT
VCLAMP = 250V, Ta = 25 C
50.0
37.5
25.0
12.5
80
70
60
50
40
30
20
10
0
0.0
1
2
3
4
5
6
7
0
8
25
50
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCC = 50V, LC = 1mH
VBE(off) = -5V, IB2 = -1.5V
Ic = 4 Ib
9
8
7
6
5
4
3
2
1
0
200
6
Vcc = 50V
VBE(off) = -5V
LC = 1mH
5
4
Ic = 5 Ib
3
Ic = 4 Ib
Ic = 3.3 Ib
2
1
Ic = 2.2 Ib
0
300
400
500
600
700
800
0
VCE[V], COLLECTOR-EMITTER VOLTAGE
2
4
6
8
10
12
14
16
18
ICE[A], COLLECTOR CURRENT
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
125
Figure 12. RBSOA Saturation
12
10
100
TC[ C], CASE TEMPERATURE
Figure 11. Reverse Bias Safe Operating Area
11
75
o
IC [A], COLLECTOR CURRENT
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4
FJB3307D — High Voltage Fast Switching NPN Power Transistor
Typical Performance Characteristics (Continued)
FJB3307D — High Voltage Fast Switching NPN Power Transistor
Typical Performance Characteristics
(Continued)
Figure 13. Forward Biased Safe Operating Area
IC [A], COLLECTOR CURREMT
100
IC(MAX), Pulse
10μs
10
1ms
IC(MAX), DC
100μs
1
0.1
o
TC = 25 C
Single Pulse
0.01
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
www.fairchildsemi.com
5
FJB3307D — High Voltage Fast Switching NPN Power Transistor
Physical Dimensions
D2-PAK
Dimensions in Millimeters
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
www.fairchildsemi.com
6
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