Vishay BYT77 Fast avalanche sinterglass diode Datasheet

BYT77, BYT78
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Controlled avalanche characteristics
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
949588
MECHANICAL DATA
• Halogen-free according to IEC 61249-2-21 definition
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
APPLICATIONS
• Fast “soft recovery” rectification diode
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BYT77
VR = 800 V; IFAV = 3 A
SOD-64
BYT78
VR = 1000 V; IFAV = 3 A
SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage = repetitive peak
reverse voltage
Peak forward surge current
See electrical characteristics
PART
SYMBOL
VALUE
UNIT
BYT77
VR = VRRM
800
V
BYT78
VR = VRRM
1000
V
tp = 10 ms, half sine wave
IFSM
100
A
Average forward current
Tamb ≤ 45 °C
IFAV
3
A
Non repetitive reverse avalanche
energy
I(BR)R = 0.4 A
ER
10
mJ
Tj = Tstg
- 55 to + 175
°C
Junction and storage temperature
range
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
25
K/W
On PC board with spacing 25 mm
RthJA
70
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Document Number: 86034
Rev. 1.8, 30-Jul-10
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 3 A
PART
VF
-
1
1.2
V
VR = VRRM
IR
-
1
5
μA
VR = VRRM, Tj = 150 °C
IR
-
60
150
μA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
250
ns
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
UNIT
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BYT77, BYT78
Fast Avalanche Sinterglass Diode
Vishay Semiconductors
40
3.5
IFAV - Average Forward Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
30
20
l
l
10
TL = constant
2.0
1.5
RthJA = 70 K/W
PCB: d = 25 mm
1.0
0.5
0
0
5
10
15
20
25
30
l - Lead Length (mm)
0
20
40
60
80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
16371
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 4 - Max. Average Forward Current vs. Ambient Temperature
1000
240
VR = VRRM
200
IR - Reverse Current (μA)
Tj - Junction Temperature (°C)
RthJA = 25 K/W
I = 10 mm
2.5
0
949466
VRRM
160
VR
120
80
RthJA = 70 K/W
40
100
10
1
25
0
0
949467
200
400
600
800
1000
VR, VRRM - Rev./Rep. Peak Rev. Voltage (V)
Fig. 2 - Junction Temperature vs.
Reverse/Repetitive Peak Reverse Voltage
10
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
0.001
0
16370
0.5
1.0
1.5
2.0
Fig. 3 - Forward Current vs. Forward Voltage
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2
75
100
125
150
175
Fig. 5 - Reverse Current vs. Junction Temperature
450
VR = VRRM
400
350
300
PR-Limit
at 100 % VR
250
200
150
PR-Limit
at 80 % VR
100
50
0
25
2.5
VF - Forward Voltage (V)
50
Tj - Junction Temperature (°C)
16372
PR - Reverse Power Dissipation (mW)
100
IF - Forward Current (A)
VR = VRRM
half sinewave
3.0
16373
50
75
100
125
150
175
Tj - Junction Temperature (°C)
Fig. 6 - Max Reverse Power Dissipation vs. Junction Temperature
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 86034
Rev. 1.8, 30-Jul-10
BYT77, BYT78
Fast Avalanche Sinterglass Diode
Vishay Semiconductors
CD - Diode Capacitance (pF)
90
f = 1 MHz
80
70
60
50
40
30
20
10
0
0.1
1
10
100
VR - Reverse Voltage (V)
16374
Fig. 7 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Document Number: 86034
Rev. 1.8, 30-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Document Number: 91000
Revision: 11-Mar-11
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