AOSMD AO4613 30v dual p n-channel mosfet Datasheet

AO4613
30V Dual P + N-Channel MOSFET
General Description
Product Summary
The AO4613 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs may
be used to form a level shifted high side switch,
and for a host of other applications.
N-Channel
P-Channel
VDS (V) = 30V
-30V
ID = 7.2A (VGS=10V)
-6.1A (VGS=10V)
RDS(ON)
RDS(ON)
< 24mΩ (VGS=10V)
< 37mΩ (VGS = -10V)
< 40mΩ (VGS=4.5V)
< 60mΩ (VGS = -4.5V)
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D2
D1
Bottom View
Top View
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain
Current A
VGS
TA=70°C
TA=25°C
±20
7.2
-6.1
ID
6.1
-5.1
IDM
30
-30
Avalanche Current B
Repetitive avalanche energy 0.1mH
B
Junction and Storage Temperature Range
V
A
2
2
1.44
IAR
15
20
A
EAR
11
20
-55 to 150
-55 to 150
mJ
°C
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
A
t ≤ 10s
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
Units
V
1.44
PD
TA=70°C
Max p-channel
-30
±20
TA=25°C
Pulsed Drain Current B
Power Dissipation
n-channel
p-channel
Pin1
Symbol
RθJA
RθJL
RθJA
RθJL
W
Max
Typ
n-ch
n-ch
n-ch
55
92
37
62.5
110
50
Units
°C/W
°C/W
°C/W
p-ch
p-ch
p-ch
48
84
37
62.5
110
50
°C/W
°C/W
°C/W
AO4613
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
1
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
VGS=10V, ID=7.2A
TJ=125°C
VGS=4.5V, ID=4A
gFS
Forward Transconductance
VDS=5V, ID=7.2A
VSD
Diode Forward Voltage
IS=1A
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
10
µA
3
V
20
24
29
35
30
40
A
18
0.77
mΩ
mΩ
S
1
V
3
A
630
pF
VGS=0V, VDS=15V, f=1MHz
110
VGS=0V, VDS=0V, f=1MHz
2.1
3
Ω
11
15
nC
5.3
7
nC
pF
75
VGS=10V, VDS=15V, ID=7.2A
VGS=10V, VDS=15V, RL=2.1Ω,
RGEN=3Ω
pF
1.9
nC
4
nC
4.7
7
ns
4.9
10
ns
16.2
22
ns
3.5
7
ns
ns
nC
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=7.2A, dI/dt=100A/µs
15.7
20
Qrr
Body Diode Reverse Recovery Charge IF=7.2A, dI/dt=100A/µs
7.9
10
Body Diode Reverse Recovery Time
µA
2
522
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
10
Units
V
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=24V, VGS=0V
VGS(th)
RDS(ON)
Typ
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4613
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
VDS=-24V, VGS=0V
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
30
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.77
IS
Maximum Body-Diode Continuous Current
TJ=55°C
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
-1.7
-3
28
37
48
VGS=-4.5V, ID=-4A
45
60
VDS=-5V, ID=-6.1A
12.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
VGS=-10V, VDS=-15V, ID=-6.1A
V
mΩ
mΩ
-1
V
3
A
1250
pF
179
pF
134
VGS=0V, VDS=0V, f=1MHz
µA
S
1040
VGS=0V, VDS=-15V, f=1MHz
µA
A
39
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
-5
10
VGS=-10V, ID=-6.1A
Units
V
IDSS
Coss
Max
pF
5
10
Ω
16.8
22
nC
8.7
12
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
5
tD(on)
Turn-On DelayTime
9
12
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Qrr
VGS=-10V, VDS=-15V, RL=2.5Ω,
RGEN=3Ω
3.4
nC
nC
5.7
11
ns
22.7
30
ns
10.2
20
ns
IF=-6.1A, dI/dt=100A/µs
21.7
27
Body Diode Reverse Recovery Charge IF=-6.1A, dI/dt=100A/µs
13.6
18
ns
nC
A: The value of R θJA
is measured with the device mounted on 1in 22 FR-4 board with 2oz. Copper, in a still air environment with T AA =25°C. The
θJA
value
in
any
given
application
depends
on theon
user's
specific
boardboard
design.
The current
rating rating
is based
on theon
t the
≤ 10s
resistance
The value in any a given application
depends
the user's
specific
design.
The current
is based
t ≤ thermal
10s thermal
rating.
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
thermal
resistance
from junction
to drain
D. The static
characteristics
in Figures
1 lead.
to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
D.
The static
Figures
1 to 6,12,14
areon
obtained
usingboard
80 µswith
pulses,
cyclein0.5%
E. These
testscharacteristics
are performedinwith
the device
mounted
1 in 2 FR-4
2oz.duty
Copper,
a stillmax.
air environment with T =25°C. The
E.
These
tests
are performed
with the
device mounted on 1 in
SOA
curve
provides
a single pulse
rating.
curve provides a single pulse rating.
2
A
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4613
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
5V
10V
4.5V
25
VDS=5V
16
4V
12
ID(A)
ID (A)
20
15
3.5V
8
125°C
10
4
5
VGS=3V
25°C
0
0
0
1
2
3
4
0
5
0.5
1.5
2
2.5
3
3.5
4
4.5
150
175
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
1.6
35
Normalized On-Resistance
40
RDS(ON) (mΩ )
1
VGS=4.5V
30
25
20
15
VGS=10V
1.5
VGS=10V
ID=7.2A
1.4
1.3
VGS=4.5V
ID=4A
1.2
1.1
1
0.9
0.8
10
0
5
10
15
0
20
25
50
75
100
125
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
ID=7.2A
1.0E+00
60
1.0E-01
IS Amps
RDS(ON) (mΩ )
50
125°C
40
125°C
1.0E-02
25°C
1.0E-03
30
1.0E-04
20
25°C
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body diode characteristics
1.0
AO4613
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
800
Capacitance (pF)
VGS (Volts)
8
f=1MHz
VGS=0V
900
VDS=15V
ID=7.2A
6
4
Ciss
700
600
500
400
300
200
2
Coss
100
Crss
0
0
0
2
4
6
8
10
0
12
100
25
30
10µs
Power W
ID (Amps)
20
TJ(Max)=150°C
TA=25°C
10ms
0.1s
1
15
30
100µs
1ms
10
10
40
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
5
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge characteristics
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4613
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
30
-10V
-6V
20
-4V
-5V
20
15
15
-ID(A)
-ID (A)
VDS=-5V
-4.5V
25
-3.5V
10
10
VGS=-3V
125°C
5
5
25°C
-2.5V
0
0
0
1
2
3
4
5
0
1
90
3
4
5
6
1.6
Normalized On-Resistance
80
70
RDS(ON) (mΩ )
2
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
60
VGS=-4.5V
50
40
VGS=-10V
30
VGS=-10V
ID=-6.1A
1.4
VGS=-4.5V
ID=-4
1.2
1
0.8
20
0
5
10
15
20
0
25
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
1.0E+01
ID=-6.1A
90
1.0E+00
80
1.0E-01
125°C
-IS (A)
RDS(ON) (mΩ )
70
60
125°C
50
40
1.0E-03
1.0E-04
25°C
30
1.0E-02
25°C
1.0E-05
20
1.0E-06
10
3
4
5
6
7
8
9
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4613
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=-15V
ID=-6.1A
1250
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2
1000
750
500
Coss
Crss
250
0
0
0
4
8
12
16
20
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
100µs
30
0.1s
30
Power (W)
-ID (Amps)
25
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
1ms
10ms
1s
20
10
10s
DC
0
0.001
0.1
0.1
20
40
TJ(Max)=150°C, T A=25°C
1.0
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
10
1
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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