IXYS IXTQ26P20P P-channel enhancement mode avalanche rated Datasheet

Preliminary Technical Information
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
VDSS
ID25
S
G
D(TAB)
D
D(TAB)
G
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
- 200
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
- 200
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
- 26
A
IDM
TC = 25°C, pulse width limited by TJM
- 70
A
IAR
TC = 25°C
- 26
A
EAR
TC = 25°C
50
mJ
EAS
TC = 25°C
1.5
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
10
V/ns
PD
TC = 25°C
300
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
z
300
260
°C
°C
z
1.13/10
Nm/lb.in.
6.0
5.5
3.0
2.5
g
g
g
g
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Md
Mounting torque
Weight
TO-247
TO-3P
TO-220
TO-263
(TO-3P,TO-220,TO-247)
G
z
z
z
z
z
z
z
z
z
- 200
VGS(th)
VDS = VGS, ID = -250μA
- 2.5
IGSS
VGS = ±20V, VDS = 0V
±100 nA
z
IDSS
VDS = VDSS
VGS = 0V
- 10 μA
- 250 μA
z
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
170 mΩ
z
TJ = 150°C
V
International standard packages
Fast intrinsic diode
Dynamic dV/dt Rated
Avalanche Rated
Rugged PolarPTM process
Low QG and Rds(on) characterization
Low Drain-to-Tab capacitance
Low package inductance
- easy to drive and to protect
Hight side switching
Push-pull amplifiers
DC Choppers
Current regulators
Automatic test equipment
Advantages:
z
© 2007 IXYS CORPORATION, All rights reserved
D = Drain
TAB = Drain
Applications:
VGS = 0V, ID = -250 μA
V
D(TAB)
S
Features:
BVDSS
- 4.5
D
G = Gate
S = Source
z
Characteristic Values
Min. Typ. Max.
D(TAB)
D S
TO-3P (IXTQ)
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
- 200V
- 26A
Ω
170mΩ
TO-220 (IXTP)
S
TJ
TJM
Tstg
=
=
≤
RDS(on)
TO-247 (IXTH)
TO-263 (IXTA)
G
IXTA26P20P
IXTH26P20P
IXTP26P20P
IXTQ26P20P
Low gate charge results in simple
drive requirement
Improved Gate, Avalanche and
dynamic dV/dt ruggedness
High power density
Fast switching
DS99913(10/07)
IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Characteristic Values
Min.
Typ. Max.
VDS = -10V, ID = 0.5 • ID25, (Note 1)
10
Ciss
Coss
17
S
2920
pF
540
pF
100
pF
18
ns
33
ns
46
ns
21
ns
56
nC
18
nC
20
nC
VGS = 0V, VDS = -25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
Qg(on)
Qgs
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.5 °C/W
RthJC
RthCS
(TO-3P)(TO-247)
0.21
°C/W
(TO-220)
0.25
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IS
VGS = 0V
ISM
Characteristic Values
Min. Typ.
Max.
- 26
A
Repetitive
- 104
A
VSD
IF = -13A, VGS = 0V, Note 1
- 3.0
V
trr
QRM
IRM
IF = -13A, -di/dt = -100A/μs
VR = -100V, VGS = 0V
240
2.20
-18.0
ns
μC
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
TO-263 (IXTA) Outline
TO-247 (IXTH) Outline
∅P
1
2
3
e
Terminals: 1 - Gate
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
2.2
2.6
A2
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
TO-3P (IXTQ) Outline
TO-220 (IXTP) Outline
Pins:
1 - Gate
2 - Drain
© 2007 IXYS CORPORATION, All rights reserved
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
-28
-90
VGS = -10V
-8V
-24
VGS = -10V
-9V
-80
-70
-7V
ID - Amperes
ID - Amperes
-20
-16
-6V
-12
-8V
-60
-50
-7V
-40
-30
-6V
-8
-20
-5V
-4
0
0
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
0
-3
-6
-9
-12
-15
-18
-21
-24
-27
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ 150ºC
Fig. 4. RDS(on) Normalized to ID = -13A vs.
Junction Temperature
-28
-30
2.8
VGS = -10V
-8V
-24
VGS = -10V
2.6
2.4
RDS(on) - Normalized
-7V
ID - Amperes
-5V
-10
-20
-6V
-16
-12
-8
2.2
2.0
I D = -26A
1.8
I D = -13A
1.6
1.4
1.2
1.0
-5V
0.8
-4
0.6
0.4
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-50
-10
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = -13A vs.
Drain Current
50
75
100
125
150
175
Fig. 6. Maximum Drain Current vs.
Case Temperature
-28
3.4
3.2
-26
VGS = -10V
3.0
-15V
TJ = 175ºC
----
-24
-22
2.8
-20
2.6
ID - Amperes
RDS(on) - Normalized
25
TJ - Degrees Centigrade
2.4
2.2
2.0
1.8
-18
-16
-14
-12
-10
1.6
-8
1.4
-6
TJ = 25ºC
1.2
-4
1.0
-2
0.8
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
ID - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
-50
-25
0
25
50
75
100
TJ - Degrees Centigrade
125
150
175
IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
Fig. 7. Input Admittance
32
-40
28
TJ = - 40ºC
TJ = - 40ºC
25ºC
150ºC
-35
-30
24
25ºC
g f s - Siemens
ID - Amperes
Fig. 8. Transconductance
-45
-25
-20
-15
20
16
150ºC
12
8
-10
4
-5
0
0
-3
-3.5
-4
-4.5
-5
-5.5
-6
-6.5
-7
0
-5
-10
-15
-20
VGS - Volts
-25
-30
-35
-40
-45
-50
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
-10
-80
VDS = -100V
-9
-70
I D = - 13A
-8
I G = -1mA
-60
-50
VGS - Volts
IS - Amperes
-7
-40
TJ = 150ºC
-30
-5
-4
-3
TJ = 25ºC
-20
-6
-2
-10
-1
0
-0.5
0
-1
-1.5
-2
-2.5
-3
-3.5
0
-4
5
10
15
20
25
30
35
40
45
50
55
60
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
-100
10,000
RDS(on) Limit
f = 1 MHz
100µs
Ciss
1,000
ID - Amperes
Capacitance - PicoFarads
25µs
Coss
1ms
- 10
10ms
100
100ms
DC
Crss
TJ = 175ºC
TC = 25ºC
Single Pulse
10
0
-5
-10
-15
-20
-25
VDS - Volts
© 2007 IXYS CORPORATION, All rights reserved
-30
-35
-40
-1
- 10
- 100
VDS - Volts
- 1000
IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
Fig. 13. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_26P20P(B5)10-10-07
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