Microsemi APTGT300A120D3G Phase leg trench field stop igbt3 power module Datasheet

APTGT300A120D3G
Phase leg
Trench + Field Stop IGBT3
Power Module
Q1
3
4
5
Q2
1
6
7
2
VCES = 1200V
IC = 300A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M6 power connectors
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
440
300
600
±20
1450
Tj = 125°C
600A @ 1100V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
March, 2011
Parameter
Collector - Emitter Breakdown Voltage
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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1-5
APTGT300A120D3G – Rev 2
Symbol
VCES
APTGT300A120D3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 300A
Tj = 125°C
VGE = VCE , IC = 12mA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.7
2.0
5.8
Max
Unit
500
2.1
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol Characteristic
Input Capacitance
Cies
Cres
Reverse Transfer Capacitance
QG
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Isc
Short Circuit data
Test Conditions
VGE = 0V ; VCE = 25V
f = 1MHz
VGE=±15V, IC=300A
VCE=600V
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 300A
RG = 2.2Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 300A
RG = 2.2Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 300A
Tj = 125°C
RG = 2.2Ω
VGE ≤15V ; VBus = 900V
tp ≤ 10µs ; Tj = 125°C
Min
Test Conditions
Min
1200
Typ
21
1
nF
2.8
µC
250
90
550
ns
130
300
100
ns
650
180
25
mJ
44
1200
A
Reverse diode ratings and characteristics
IF
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Err
Reverse Recovery Energy
IF = 300A
VGE = 0V
IF = 300A
VR = 600V
di/dt =3500A/µs
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
300
1.6
1.6
170
Tj = 125°C
280
Tj = 25°C
Tj = 125°C
Tj = 25°C
28
56
12
Tj = 125°C
22
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Max
750
1000
Unit
V
µA
A
2.1
V
ns
March, 2011
IRRM
Typ
µC
mJ
2-5
APTGT300A120D3G – Rev 2
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTGT300A120D3G
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
For terminals
To Heatsink
M6
M6
4000
-40
-40
-40
3
3
Typ
Max
0.085
0.16
Unit
°C/W
V
150
125
125
5
5
350
°C
N.m
g
D3 Package outline (dimensions in mm)
1°
A
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3-5
APTGT300A120D3G – Rev 2
March, 2011
DÉTAIL A
APTGT300A120D3G
Typical Performance Curve
Output Characteristics
600
500
500
TJ=25°C
TJ = 125°C
VGE=17V
TJ=125°C
300
VGE=15V
300
200
200
100
100
0
VGE=9V
0
0
1
2
3
4
0
1
2
VCE (V)
VCE (V)
3
4
Energy losses vs Collector Current
Transfert Characteristics
600
100
500
E (mJ)
300
200
VCE = 600V
VGE = 15V
RG = 2.2 Ω
TJ = 125°C
80
TJ=25°C
400
IC (A)
VGE=13V
400
400
IC (A)
IC (A)
Output Characteristics (VGE=15V)
600
TJ=125°C
60
Eoff
Eon
40
Err
20
100
Eon
0
0
5
6
7
8
9
VGE (V)
10
11
0
12
200
300
400
500
600
IC (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
150
700
VCE = 600V
VGE =15V
IC = 300A
TJ = 125°C
100
75
Eon
600
500
IC (A)
125
E (mJ)
100
Eoff
50
400
300
VGE=15V
TJ=125°C
RG=2.2 Ω
200
25
100
Err
0
0
0
4
8
12
16
Gate Resistance (ohms)
0
20
300
600
900
1200
1500
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.06
IGBT
0.9
March, 2011
0.08
0.7
0.5
0.04
0.02
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGT300A120D3G – Rev 2
Thermal Impedance (°C/W)
0.1
APTGT300A120D3G
Forward Characteristic of diode
600
VCE=600V
D=50%
RG=2.2 Ω
TJ=125°C
TC=75°C
40
30
TJ=25°C
500
400
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
50
ZVS
20
300
ZCS
200
Hard
switching
10
TJ=125°C
100
0
0
0
100
200
300
IC (A)
400
500
0
0.4
0.8
1.2
VF (V)
1.6
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.18
0.16
0.9
Diode
0.14
0.12
0.1
0.08
0.06
0.7
0.5
0.3
0.04
0.1
0.02
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
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5-5
APTGT300A120D3G – Rev 2
March, 2011
rectangular Pulse Duration (Seconds)
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