Samsung K6F1616T6B-F 1m x16 bit super low power and low voltage full cmos static ram Datasheet

K6F1616T6B Family
CMOS SRAM
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
Draft Date
Remark
0.0
Initial draft
May 21, 2003
Preliminary
0.1
Revised
- Changed Isb1(max.) from 25uA to 15uA
June 17, 2003
Preliminary
1.0
Finalized
- Added Package Type ’48-TBGA - 7.00x7.00’
August 13, 2003
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
August 2003
K6F1616T6B Family
CMOS SRAM
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
GENERAL DESCRIPTION
• Process Technology: Full CMOS
• Organization: 1M x16
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00
The K6F1616T6B families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation
with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temperature
Vcc Range
Speed
K6F1616T6B-F
Industrial(-40~85°C)
2.7~3.6V
551)/70ns
Standby
(ISB1, Typ.)
Operating
(ICC1, Max)
5µA2)
5mA
PKG Type
48-TSOP1-1220F
48-TBGA - 7.00x7.00
1. The parameter is measured with 30pF test load.
2. Typical value is measured at VCC=3.3V, TA=25°C and not 100% tested.
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
CS2
NC
UB
LB
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
48-TSOP1-1220F
A16
NC
Vss
I/O16
I/O8
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
Vcc
I/O12
I/O4
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
OE
Vss
CS1
A0
Clk gen.
Vcc
Vss
Row
Addresses
2
3
4
5
Memory
Cell
Array
Row
select
I/O Circuit
Column select
Data
cont
I/O1~I/O8
Data
cont
I/O9~I/O16
1
Precharge circuit.
6
Data
cont
A
LB
OE
A0
A1
A2
CS2
B
I/O9
UB
A3
A4
CS1
I/O1
C
I/O10
I/O11
A5
A6
I/O2
I/O3
Column Addresses
CS1
CS2
OE
Control Logic
WE
D
Vss
I/O12
A17
A7
I/O4
Vcc
UB
LB
E
Vcc
I/O13
Vss
A16
I/O5
Vss
F
I/O15
I/O14
A14
A15
I/O6
I/O7
Name
CS1, CS2 Chip Select Inputs
OE
G
I/O16
A19
A12
A13
WE
I/O8
WE
A0~A19
H
A18
A8
A9
A10
A11
Function
Name
Function
Vcc
Power
Output Enable Input
Vss
Ground
Write Enable Input
UB
Upper Byte(I/O9~16)
Address Inputs
LB
Lower Byte(I/O1~8)
NC
No Connection
NC
I/O1~I/O16 Data Inputs/Outputs
48-TBGA: Top View (Ball Down)
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
August 2003
K6F1616T6B Family
CMOS SRAM
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
Function
K6F1616T6B-TF55
K6F1616T6B-TF70
K6F1616T6B-EF55
K6F1616T6B-EF70
48-TSOP1-1220F, 55ns, 3.0V/3.3V
48-TSOP1-1220F, 70ns, 3.0V/3.3V
48-TBGA, 55ns, 3.0V/3.3V
48-TBGA, 70ns, 3.0V/3.3V
FUNCTIONAL DESCRIPTION
CS1
CS2
OE
WE
LB
UB
1)
1)
I/O1~8
I/O9~16
Mode
Power
X
High-Z
High-Z
Deselected
Standby
X1)
High-Z
High-Z
Deselected
Standby
H
X
X
X
X
X1)
L
X1)
X1)
X1)
X1)
X1)
X1)
X1)
H
H
High-Z
High-Z
Deselected
Standby
L
H
H
H
L
X1)
High-Z
High-Z
Output Disabled
Active
L
H
H
H
X
L
High-Z
High-Z
Output Disabled
Active
L
H
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
H
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
H
L
H
L
L
Dout
Dout
Word Read
Active
L
H
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
H
1)
X
L
H
L
High-Z
Din
Upper Byte Write
Active
L
H
X1)
L
L
L
Din
Din
Word Write
Active
1)
1)
X
1)
1)
1. X means don′t care. (Must be low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
Ratings
Unit
VIN,VOUT
-0.2 to VCC+0.3V(Max. 4.2V)
V
VCC
-0.2 to 4.2
V
PD
1.0
W
TSTG
-65 to 150
°C
TA
-40 to 85
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 1.0
August 2003
K6F1616T6B Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Symbol
Min
Typ
Max
Unit
Supply voltage
Item
Vcc
2.7
3.0/3.3
3.6
V
Ground
Vss
0
0
0
V
Input high voltage
VIH
2.2
-
Vcc+0.22)
V
Input low voltage
VIL
-0.23)
-
0.6
V
Note:
1. TA=-40 to 85°C, otherwise specified
2. Overshoot: VCC+2.0V in case of pulse width ≤20ns.
3. Undershoot: -2.0V in case of pulse width ≤20ns.
4. Overshoot and Undershoot are sampled, not 100% tested.
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Output capacitance
CIO
VIO=0V
-
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Max
Unit
Input leakage current
ILI
VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH,
VIO=Vss to Vcc
-1
-
1
µA
ICC1
Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V, LB≤0.2V
or/and UB≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
-
-
5
mA
ICC2
Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL,
CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH
70ns
-
-
25
55ns
-
-
30
Average operating current
Test Conditions
Min
Typ1)
mA
Output low voltage
VOL
IOL = 2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH = -1.0mA
2.4
-
-
V
Standby Current (CMOS)
ISB1
Other input =0~Vcc
1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or
2) 0V≤CS2≤0.2V(CS2 controlled)
-
5.0
15
µA
1. Typical values are measured at VCC=3.3V, TA=25°C and not 100% tested.
4
Revision 1.0
August 2003
K6F1616T6B Family
CMOS SRAM
AC OPERATING CONDITIONS
VTM3)
TEST CONDITIONS(Test Load and Input/Output Reference)
R12)
Input pulse level: 0.2V to Vcc-0.2V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): CL=100pF+1TTL
CL=30pF+1TTL
CL1)
R22)
1. Including scope and jig capacitance
2. R1=3070Ω, R2=3150Ω
3. VTM =2.8V
AC CHARACTERISTICS (Vcc=2.7~3.6V, TA=-40 to 85°C)
Speed Bins
Parameter List
Symbol
55ns
Min
Read
Write
Units
70ns
Max
Min
Max
Read cycle time
tRC
55
-
70
-
ns
Address access time
tAA
-
55
-
70
ns
Chip select to output
tCO
-
55
-
70
ns
Output enable to valid output
tOE
-
25
-
35
ns
LB, UB valid to data output
tBA
-
55
-
70
ns
Chip select to low-Z output
tLZ
10
-
10
-
ns
Output enable to low-Z output
tOLZ
5
-
5
-
ns
LB, UB enable to low-Z output
tBLZ
10
-
10
-
ns
Output hold from address change
tOH
10
-
10
-
ns
Chip disable to high-Z output
tHZ
0
20
0
25
ns
OE disable to high-Z output
tOHZ
0
20
0
25
ns
UB, LB disable to high-Z output
tBHZ
0
20
0
25
ns
Write cycle time
tWC
55
-
70
-
ns
Chip select to end of write
tCW
45
-
60
-
ns
Address set-up time
tAS
0
-
0
-
ns
Address valid to end of write
tAW
45
-
60
-
ns
Write pulse width
tWP
40
-
50
-
ns
Write recovery time
tWR
0
-
0
-
ns
Write to output high-Z
tWHZ
0
20
0
20
ns
Data to write time overlap
tDW
25
-
30
-
ns
Data hold from write time
tDH
0
-
0
-
ns
End write to output low-Z
tOW
5
-
5
-
ns
LB, UB valid to end of write
tBW
45
-
60
-
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Vcc for data retention
VDR
CS1≥Vcc-0.2V , VIN≥0V
Data retention current
IDR
Vcc=1.5V, CS1≥Vcc-0.2V1), VIN≥0V
Data retention set-up time
tSDR
Recovery time
tRDR
1)
See data retention waveform
Min
Typ
Max
1.5
-
3.6
V
-
1.02)
10
µA
0
-
-
tRC
-
-
Unit
ns
1. 1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or
2) 0≤CS2≤0.2V(CS2 controlled)
2. Typical value are measured at TA=25°C and not 100% tested.
5
Revision 1.0
August 2003
K6F1616T6B Family
CMOS SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, UB or/and LB=VIL)
tRC
Address
tAA
tOH
Data Out
Data Valid
Previous Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
tRC
Address
tOH
tAA
tCO
CS1
CS2
tHZ
tBA
UB, LB
tBHZ
tOE
OE
tOLZ
tBLZ
Data out
High-Z
tOHZ
tLZ
Data Valid
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
6
Revision 1.0
August 2003
K6F1616T6B Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
tWC
Address
tCW(2)
tWR(4)
CS1
CS2
tAW
tBW
UB, LB
tWP(1)
WE
tAS(3)
tDW
Data in
High-Z
tDH
tWHZ
Data out
High-Z
Data Valid
tOW
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 Controlled)
tWC
Address
tAS(3)
tCW(2)
tWR(4)
CS1
tAW
CS2
tBW
UB, LB
tWP(1)
WE
tDW
Data Valid
Data in
Data out
tDH
High-Z
High-Z
7
Revision 1.0
August 2003
K6F1616T6B Family
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB Controlled)
tWC
Address
tCW(2)
tWR(4)
CS1
tAW
CS2
tBW
UB, LB
tAS(3)
tWP(1)
WE
tDW
Data Valid
Data in
Data out
tDH
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP) of low CS1 and low WE. A write begins when CS1 goes low and WE goes low with asserting
UB or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transition when CS1 goes high and WE goes high. The tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the CS1 going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends with CS1 or WE going high.
DATA RETENTION WAVEFORM
CS1 controlled
VCC
tSDR
Data Retention Mode
tRDR
2.7V
2.2V
VDR
CS1≥VCC - 0.2V
CS1
GND
CS2 controlled
Data Retention Mode
VCC
2.7V
CS2
tSDR
tRDR
VDR
CS2≤0.2V
0.4V
GND
8
Revision 1.0
August 2003
K6F1616T6B Family
CMOS SRAM
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
Unit :mm/Inch
0.10
MAX
0.004
48 - TSOP1 - 1220F
#48
#24
#25
0.50
0.0197
12.40
0.488 MAX
( 0.25 )
0.010
#1
12.00
0.472
+0.003
0.008-0.001
0.20 -0.03
+0.07
20.00±0.20
0.787±0.008
1.00±0.05
0.039±0.002
0.05
0.002 MIN
0~8’C
0.45~0.75
0.018~0.030
+0.003
0.005-0.001
+0.075
18.40±0.10
0.724±0.004
0.125 -0.035
0.25
0.010 TYP
1.20
0.047MAX
( 0.50 )
0.020
9
Revision 1.0
August 2003
K6F1616T6B Family
CMOS SRAM
PACKAGE DIMENSION
Unit: millimeters
48 BALL TAPE BALL GRID ARRAY(0.75mm ball pitch)
Top View
Bottom View
B
B1
B
6
5
4
3
2
1
A
B
#A1
C
C
C
C1
D
C1/2
C1/
E
F
G
H
B1/2
Detail A
Side View
A
Y
0.55/Typ.
E1
E
0.35/Typ.
E2
D
C
Min
Typ
Max
A
-
0.75
-
B
6.90
7.00
7.10
1. Bump counts: 48(8 row x 6 column)
B1
-
3.75
-
2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.)
C
6.90
7.00
7.10
C1
-
5.25
-
D
0.40
0.45
0.50
E
0.80
0.90
1.00
E1
-
0.55
-
E2
0.30
0.35
0.40
Y
-
-
0.1
Notes.
3. All tolerence are ±0.050 unless
otherwise specified.
4. Typ: Typical
5. Y is coplanarity: 0.1(Max)
10
Revision 1.0
August 2003
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