Fairchild FGPF50N30T 300v, 50a pdp igbt Datasheet

FGPF50N30T
tm
300V, 50A PDP IGBT
Features
General Description
• High current capability
Using Novel Trench IGBT Technology, Fairchild’s new sesries of
trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
• Low saturation voltage: VCE(sat) =1.4V @ IC = 30A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
C
G
TO-220F
1
1.Gate
2.Collector
3.Emitter
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Units
VCES
Collector to Emitter Voltage
300
V
VGES
Gate to Emitter Voltage
± 30
V
ICM (1)
Pulsed Collector Current
120
A
PD
@ TC = 25oC
o
Maximum Power Dissipation
@ TC = 25 C
46.8
W
Maximum Power Dissipation
@ TC = 100oC
18.7
W
TJ
Operating Junction Temperature
-55 to +150
o
C
Tstg
Storage Temperature Range
-55 to +150
o
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
2.67
o
C/W
RθJA
Thermal Resistance, Junction to Ambient
-
62.5
o
C/W
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
* IC_pluse limited by max Tj
©2008 Fairchild Semiconductor Corporation
FGPF50N30T Rev. A
1
www.fairchildsemi.com
FGPF50N30T 300V, 50A PDP IGBT
January 2008
Device Marking
Device
Package
Packaging
Type
FGPF50N30T
FGPF50N30TTU
TO-220F
Rail / Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
50ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
300
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
∆BVCES
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
-
0.3
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
µA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250µA, VCE = VGE
3.0
4.5
5.5
V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
IC = 15A, VGE = 15V
-
1.1
1.5
V
IC = 30A, VGE = 15V
-
1.4
-
V
IC = 50A, VGE = 15V,
TC = 25oC
-
1.65
-
V
IC = 50A, VGE = 15V,
TC = 125oC
-
1.60
-
V
-
2320
-
pF
VCE = 30V, VGE = 0V,
f = 1MHz
-
92
-
pF
-
80
-
pF
-
31
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
td(on)
VCC = 200V, IC = 30A,
RG = 15Ω, VGE = 15V,
Resistive Load, TC = 25oC
-
78
-
ns
-
156
-
ns
Fall Time
-
200
300
ns
Turn-On Delay Time
-
30
-
ns
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Qg
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCC = 200V, IC = 30A,
RG = 15Ω, VGE = 15V,
Resistive Load, TC = 125oC
-
78
-
ns
-
163
-
ns
Fall Time
-
260
-
ns
Total Gate Charge
-
97
-
nC
-
15
-
nC
-
41
-
nC
FGPF50N30T Rev. A
VCE = 200V, IC = 30A,
VGE = 15V
2
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FGPF50N30T 300V, 50A PDP IGBT
Package Marking and Ordering Information
FGPF50N30T 300V, 50A PDP IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
o
TC = 25 C
o
TC = 125 C
20V
20V
15V
12V
10V
80
VGE = 8V
40
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
10V
80
VGE = 8V
40
0
0.0
6.0
Figure 3. Typical Saturation Voltage
Characteristics
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
6.0
Figure 4. Transfer Characteristics
120
120
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
100
o
o
Collector Current, IC [A]
Collector Current, IC [A]
12V
Collector Current, IC [A]
Collector Current, IC [A]
15V
TC = 25 C
o
TC = 125 C
80
60
40
TC = 25 C
o
TC = 125 C
80
40
20
0
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
2
4
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
20
Common Emitter
VGE = 15V
1.8
50A
1.6
30A
1.2
IC = 15A
1.0
0.8
25
14
3
Common Emitter
o
TC = 25 C
16
12
8
30A
4
50A
IC = 15A
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
FGPF50N30T Rev. A
6
8
10
12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
2.0
1.4
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGPF50N30T 300V, 50A PDP IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
20
10000
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
TC = 125 C
Cies
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
12
8
o
TC = 25 C
Coes
1000
Cres
30A
4
50A
100
IC = 15A
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
50
20
Figure 9. Gate charge Characteristics
1
10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
15
500
Common Emitter
TC = 25 C
VCC = 100V
200V
9
6
3
0
0
25
50
75
Gate Charge, Qg [nC]
100µs
10
1ms
10 ms
1
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
0.01
0.1
100
Figure 11. Turn-on Characteristics vs.
Gate Resistance
1
10
100
Collector-Emitter Voltage, VCE [V]
500
Figure 12. Turn-off Characteristics vs.
Gate Resistance
5500
400
Common Emitter
VCC = 200V, VGE = 15V
IC = 30A
tr
Switching Time [ns]
Switching Time [ns]
10µs
100
12
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
100
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 30A
o
1000
TC = 25 C
td(off)
o
TC = 125 C
tf
100
o
TC = 25 C
o
TC = 125 C
10
10
0
FGPF50N30T Rev. A
20
40
60
80
Gate Resistance, RG [Ω]
0
100
20
40
60
80
100
Gate Resistance, RG [Ω]
4
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FGPF50N30T 300V, 50A PDP IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
500
Common Emitter
VGE = 15V, RG = 15Ω
Common Emitter
VGE = 15V, RG = 15Ω
o
o
TC = 25 C
TC = 25 C
o
TC = 125 C
tr
100
TC = 125 C
Switching Time [ns]
Switching Time [ns]
o
td(on)
tf
td(off)
10
10
20
30
40
100
10
50
20
30
40
50
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs.Gate Resistance
2000
3000
Common Emitter
VCC = 200V, VGE = 15V
o
IC = 30A
1000
1000
o
o
Switching Loss [µJ]
Switching Loss [µJ]
TC = 25 C
Eoff
TC = 125 C
Eon
100
0
Common Emitter
VGE = 15V, RG = 15Ω
20
40
60
80
Gate Resistance, RG [Ω]
TC = 25 C
Eon
100
30
10
100
Eoff
o
TC = 125 C
20
30
40
50
Collector Current, IC [A]
Figure 17.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
10
1
0.5
0.2
0.1
0.1 0.05
0.02
PDM
0.01
t1
0.01
t2
single pulse
1E-3
1E-5
1E-4
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
FGPF50N30T Rev. A
5
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FGPF50N30T 300V, 50A PDP IGBT
Mechanical Dimensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
0°
(3
9.75 ±0.30
MAX1.47
)
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FGPF50N30T Rev. A
6
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Rev. I33
FGPF50N30T Rev. A
7
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FGPF50N30T 300V, 50A PDP IGBT
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