CFMS4 SURFACE MOUNT DUAL, COMMON BASE, SILICON PNP TRANSISTORS SOT-25 CASE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CFMS4 consists of two silicon PNP transistors in a common base configuration, manufactured by the epitaxial planar process and epoxy molded in a space saving SOT-25 surface mount package. This device has been designed for small signal applications where a high breakdown voltage is required. MARKING CODE: CFMS4 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD 120 120 5.0 50 350 UNITS V V V mA mW TJ,Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX ICBO IEBO VCB=100V VEB=4.0V BVCBO IC=50µA IC=1.0mA BVCEO BVEBO VCE(SAT) hFE IE=50µA IC=10mA, IB=1.0 mA VCE=6.0V, IC=2.0mA fT VCE=12V, IE=2.0mA, f=100MHz UNITS 500 nA 500 nA 120 V 120 V 5.0 V 500 180 mV 820 140 MHz R0 (20-July 2004) Central TM Semiconductor Corp. CFMS4 SURFACE MOUNT DUAL, COMMON BASE, SILICON PNP TRANSISTORS SOT-25 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1, Q2 3) Emitter Q2 4) Collector Q2 5) Collector Q1 DIMENSIONS INCHES MILLIMETERS MAX MIN MAX SYMBOL MIN A 0.004 0.007 0.11 0.19 B 0.016 0.40 C 0.004 0.10 D 0.039 0.047 1.00 1.20 E 0.074 0.075 1.88 1.92 F 0.037 0.038 0.93 0.97 G 0.102 0.118 2.60 3.00 H 0.059 0.067 1.50 1.70 I 0.016 0.41 J 0.110 0.118 2.80 3.00 SOT-25 (REV: R0) MARKING CODE: CFMS4 R0 (20-July 2004)