AOSMD AO4616 Complementary enhancement mode field effect transistor Datasheet

AO4616
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AO4616 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications.Standard
Product AO4616 is Pb-free (meets ROHS
& Sony 259 specifications). AO4616L is a
Green Product ordering option. AO4616
and AO4616L are electrically identical.
n-channel
VDS (V) = 30V
ID = 8.1A (VGS=10V)
RDS(ON)
< 20mΩ (VGS=10V)
< 28mΩ (VGS=4.5V)
S2
G2
S1
G1
1
2
3
4
8
7
6
5
p-channel
-30V
-7.1A (VGS = -10V)
RDS(ON)
< 25mΩ (VGS = -10V)
< 40mΩ (VGS = -4.5V)
D2
D2
D2
D1
D1
D1
G2
SOIC-8
G1
S2
S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
Continuous Drain
TA=25°C
8.1
Current A
TA=70°C
ID
6.5
B
Pulsed Drain Current
IDM
30
TA=25°C
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
PD
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-AmbientA
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
t ≤ 10s
Maximum Junction-to-AmbientA
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
Max p-channel
-30
±20
-7.1
-5.6
-30
A
2
2
1.28
-55 to 150
1.28
-55 to 150
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Units
V
V
Max
62.5
110
60
62.5
110
40
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
AO4616
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
RDS(ON)
Static Drain-Source On-Resistance
TJ=55°C
5
VGS=10V, ID=8.1A
TJ=125°C
VGS=4.5V, ID=6A
Forward Transconductance
VDS=5V, ID=8.1A
VSD
Body-Diode Forward Voltage
Maximum Body-Diode Continuous Current
IS=1A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
1.8
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=8.1A
µA
100
nA
3
V
A
16.4
20
20
25
23.4
28
mΩ
1
V
3
A
1250
pF
23
0.75
1040
VGS=0V, VDS=15V, f=1MHz
Units
V
1
Zero Gate Voltage Drain Current
gFS
Max
30
VDS=24V, VGS=0V
IDSS
IS
Typ
mΩ
S
180
pF
110
pF
0.7
Ω
19.2
nC
9.36
nC
2.6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
4.2
nC
tD(on)
Turn-On DelayTime
5.2
ns
tr
Turn-On Rise Time
4.4
ns
tD(off)
Turn-Off DelayTime
17.3
ns
tf
Turn-Off Fall Time
trr
Qrr
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
3.3
ns
Body-Diode Reverse Recovery Time
IF=8.1A, dI/dt=100A/µs
16.7
21
Body-Diode Reverse Recovery Charge
IF=8.1A, dI/dt=100A/µs
6.7
10
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given
application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides
a single pulse rating.
Rev 0 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4616
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
2.00E+01
4V
10V
25
20
3.5V
1.20E+01
ID(A)
ID (A)
VDS=5V
1.60E+01
4.5V
15
125°C
8.00E+00
10
25°C
VGS=3V
4.00E+00
5
0
0.00E+00
0
1
2
3
4
5
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics
28
1.6
Normalized On-Resistance
26
VGS=4.5V
24
RDS(ON) (mΩ)
2
22
20
18
VGS=10V
16
VGS=10V
ID=8.1A
2
1.4
24
VGS=4.5V
ID=6A
1.2
1
14
0
5
10
15
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
50
ID=8.1A
1.0E+00
1.0E-01
IS (A)
RDS(ON) (mΩ)
40
30
125°C
1.0E-02
125°C
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
AS CRITICAL
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF 20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4616
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=8.1A
1250
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
1000
750
500
Coss
250
0
Crss
0
0
4
8
12
16
20
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
24
10ms
0.1s
1.0
1s
TJ(Max)=150°C
TA=25°C
DC
20
0
0.001
0.1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=T on/T
TJ,PK=T A+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
30
10
10s
1
TJ(Max)=150°C
2
TA=25°C
40
10µs
Power (W)
ID (Amps)
100µs
1ms
10.0
10
30
50
RDS(ON)
limited
0.1
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS
NOT ASSUME ANY LIABILITY ARISING
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4616
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.4
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
30
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
VGS=-10V, ID=-7.1A
TJ=125°C
VGS=-4.5V, ID=-5.6A
VDS=-5V, ID=-7.1A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
Max
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-7.1A
VGS=-10V, VDS=-15V, RL=2.2Ω,
RGEN=3Ω
Units
V
VDS=-24V, VGS=0V
IDSS
IS
Typ
-5
-2
µA
±100
nA
-2.7
V
A
20
25
27
33
29
40
19.6
-0.7
mΩ
mΩ
S
-1
V
-4.2
A
1573
pF
319
pF
211
pF
6.7
Ω
30.9
nC
16.1
nC
8
nC
4.4
nC
9.5
ns
8
ns
44.2
ns
22.2
ns
trr
Body Diode Reverse Recovery Time
IF=-7.1A, dI/dt=100A/µs
25.5
Qrr
Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=100A/µs
14.7
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
The value
value
in any
in given
any a application
given application
depends
depends
on the on
user's
the user's
specificspecific
board board
design.design.
The current
The current
rating is
rating
based
is based
on the on
t the
≤ 10s
t thermal
≤ 10s thermal
resistance
rating.
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 0 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4616
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
-10V
-5V
VDS=-5V
25
25
-4V
20
-ID(A)
-ID (A)
20
15
-3.5V
10
125°C
10
VGS=-3V
5
15
5
0
25°C
0
0
1
2
3
4
5
1
1.5
40
2.5
3
3.5
4
4.5
5
Normalized On-Resistance
1.60
35
RDS(ON) (mΩ)
2
-VGS(Volts)
Figure 17: Transfer Characteristics
-VDS (Volts)
Fig 16: On-Region Characteristics
VGS=-4.5V
30
25
VGS=-10V
20
15
ID=-7.1A
1.40
VGS=-10V
1.20
VGS=-4.5V
ID=-5.6A
1.00
0.80
10
0
5
10
15
20
0
25
25
50
75
100
125
150
175
Temperature (°C)
Figure 19: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 18: On-Resistance vs. Drain Current and
Gate Voltage
60
1.0E+01
1.0E+00
ID=-7.1A
50
125°C
40
-IS (A)
RDS(ON) (mΩ)
1.0E-01
125°C
1.0E-02
1.0E-03
30
1.0E-04
20
25°C
1.0E-05
25°C
1.0E-06
10
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 20: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 21: Body-Diode Characteristics
1.0
AO4616
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2250
10
VDS=-15V
ID=-7.1A
2000
Ciss
1750
Capacitance (pF)
-VGS (Volts)
8
6
4
1500
1250
1000
Coss
750
Crss
500
2
250
0
0
0
4
8
12
16
20
24
28
32
0
-Qg (nC)
Figure 22: Gate-Charge Characteristics
10µs
100µs
25
30
0.1s
30
Power (W)
-ID (Amps)
20
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
1ms
10ms
1s
20
10
10s
DC
0
0.001
0.1
0.1
15
40
TJ(Max)=150°C, TA=25°C
1.0
10
-VDS (Volts)
Figure 23: Capacitance Characteristics
100.0
10.0
5
1
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 25: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 24: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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