FDMC6890NZ Dual N-Channel PowerTrench® MOSFET tm 20V, 4A, Q1:68mΩ, Q2:100mΩ Features General Description Q1: N-Channel FDMC6890NZ is a compact single package solution for DC to DC converters Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 4A with excellent thermal and switching characteristics. Inside the Power 33 package features two Max rDS(on) = 100mΩ at VGS = 2.5V, ID = 3A N-channel MOSFETs with low on-state resistance and low gate Q2: N-Channel charge to maximize the power conversion and switching efficiency. The Q1 switch also integrates gate protection from Max rDS(on) = 100mΩ at VGS = 4.5V, ID = 4A unclamped voltage input. Max rDS(on) = 150mΩ at VGS = 2.5V, ID = 2A Low gate Charge Application RoHS Compliant DC - DC Conversion Bottom Up S1 D1/S2 D2 D2 G1 D1/S2 G2 D1 3 D1/S2 5 D2 S1 G1 D1/S2 G2 G2 4 S1 D1/S2 D2 2 D1/S2 1 6 G1 Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Q1 20 VGS Gate to Source Voltage ±12 ID -Continuous 4 -Pulsed 10 Power Dissipation (Steady State) Q1 PD (Note 1a) Power Dissipation (Steady State) Q2 TJ, TSTG Q2 20 Units V ±12 V 1.92 1.78 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient Q1 RθJA Thermal Resistance, Junction to Ambient Q2 (Note 1a) 65 70 °C/W Package Marking and Ordering Information Device Marking 6890N Device FDMC6890NZ ©2006 Fairchild Semiconductor Corporation FDMC6890NZ Rev.C Package Power 33 1 Reel Size 7inch Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench® MOSFET October 2006 Symbol Parameter Test Conditions Type Min Typ Max Units ID = 250µA, VGS = 0V Q1 Q2 20 20 ID = 250µA, referenced to 25°C Q1 Q2 Q1 Q2 1 1 µA ±10 ±100 µA nA 2 2 V Off Characteristics BVDSS Drain to Source Breakdown Voltage ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V IGSS Gate to Source Leakage Current VGS = ±12V, VDS= 0V Q1 Q2 V 13 12 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA Q1 Q2 ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C Q1 Q2 -3 -3 VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 3A Q1 58 77 68 100 VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 2A Q2 67 102 100 150 VDS = V, ID =4A Q1 Q2 10 7 Q1 Q2 205 190 270 250 pF Q1 Q2 60 60 80 80 pF Q1 Q2 40 35 60 55 pF Q1 Q2 3.3 2.8 Q1 Q2 4 4 10 10 ns Q1 Q2 13 12 22 21 ns rDS(on) gFS Drain to Source On Resistance Forward Transconductance 0.6 0.6 0.9 1.0 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 10V, VGS = 0V, f= 1MHZ f = 1MHz Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Q1 Q2 10 7 19 14 ns tf Fall Time Q1 Q2 6 6 12 12 ns Qg(TOT) Total Gate Charge at 4.5V Q1 Q2 2.4 1.8 3.4 2.6 nC Qg(2) Total Gate Charge at 2V Q1 Q2 1.4 0.6 1.9 0.8 nC Qgs Gate to Source Gate Charge Q1 Q2 0.4 0.5 nC Qgd Gate to Drain “Miller” Charge Q1 Q2 0.9 0.8 nC FDMC6890NZ Rev.C VDD = 10V, ID = 4A, RGEN = 6Ω VGS = 0V to 4.5V VDD = 10 V ID = 4A 2 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 4A Q1 Q2 0.94 0.92 1.25 1.25 V trr Reverse Recovery Time Q1 Q2 18 17 27 26 ns Q1 Q2 9 10 14 15 nC IF = 4A, di/dt = 100A/s Qrr Reverse Recovery Charge Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 150°C/W when mounted on a minimum pad of 2 oz copper a. 65°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDMC6890NZ Rev.C 3 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 12 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 ID, DRAIN CURRENT (A) 3.0 VGS = 4.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 8 VGS = 2.5V 6 4 VGS = 1.8V 2 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 ID = 4A VGS = 4.5V 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On - Resistance vs Junction Temperature 2.0 VGS = 2.5V 1.5 VGS = 4.5V 1.0 0.5 0 2 4 6 8 ID, DRAIN CURRENT(A) 10 12 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 7 6 5 TJ = 150oC 4 3 TJ = 25oC 2 1 TJ 0 0.0 = -55oC 0.5 1.0 1.5 2.0 VGS, GATE TO SOURCE VOLTAGE (V) 2.5 Figure 5. Transfer Characteristics FDMC6890NZ Rev.C ID = 4A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 160 TJ = 150oC 120 80 TJ = 25oC 40 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE TO SOURCE VOLTAGE (V) 4.5 Figure 4. On-Resistance vs Gate to Source Voltage 9 ID, DRAIN CURRENT (A) VGS = 1.8V 200 1.4 8 2.5 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On-Region Characteristics PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 10 VGS = 0V 1 TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted 400 4.0 VDD = 8V Ciss 3.5 3.0 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 4.5 VDD = 10V 2.5 2.0 VDD = 12V 1.5 1.0 100 0.5 1.0 1.5 2.0 2.5 20 0.1 3.0 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics 20 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 6 20 10 5 4 3 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) Crss f = 1MHz VGS = 0V 0.5 0.0 0.0 Coss TJ = 25oC 2 TJ = 125oC 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) 100us 1 1ms 10ms 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1s 10s DC SINGLE PULSE TJ = MAX RATED TA = 25OC 0.01 0.1 10 100ms 1 60 10 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 100 FOR TEMPERATURES ABOVE 25oC DERATE PEAK VGS = 10V CURRENT AS FOLLOWS: I = I25 10 150 – T A -----------------------125 TA = 25oC SINGLE PULSE 1 0.5 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, PULSE WIDTH (s) Figure 11. FDMC6890NZ Rev.C Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.006 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDMC6890NZ Rev.C 6 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted 3.0 10 8 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 2.5V 6 4 2 VGS = 1.8V 0 0.0 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.5 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 4A VGS = 4.5V 1.3 1.2 1.1 1.0 0.9 0.8 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 6 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 4 3 TJ = 150oC 2 TJ = 25oC 1 TJ = -55oC 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3.0 Figure 17. Transfer Characteristics FDMC6890NZ Rev.C VGS = 2.5V 1.5 VGS = 4.5V 1.0 0.5 0 2 4 6 8 ID, DRAIN CURRENT(A) 10 12 ID = 4A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 160 120 TJ = 25oC TJ = 150oC 80 40 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 Figure 16. On-Resistance vs Gate to Source Voltage Figure 15. Normalized On Resistance vs Junction Temperature 5 2.0 200 1.5 0.7 -50 2.5 Figure 14. Normalized on-Resistance vS Drain Current and Gate Voltage Figure 13. On Region Characteristics 1.4 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 1.8V 20 10 VGS = 0V 1 TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 18. Source to Drain Diode Forward Voltage vs Source Current 7 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics (Q2 N-Channel) 400 4.0 VDD = 8V Ciss 3.5 3.0 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 4.5 VDD = 10V 2.5 2.0 VDD = 12V 1.5 1.0 100 Coss 0.5 0.0 0.0 0.4 0.8 1.2 1.6 20 0.1 2.0 Figure 20. Capacitance vs Drain to Source Voltage Figure 19. Gate Charge Characteristics 6 20 10 5 4 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 20 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 3 TJ = 25oC 2 TJ = 125oC 100us 1 0.1 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 10ms 100ms 1s 10s DC SINGLE PULSE TJ = MAX RATED TA = 25OC 1 1E-3 0.01 0.1 tAV, TIME IN AVALANCHE(ms) 0.01 0.1 1 1 60 10 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 22. Forward Bias Safe Operating Area Figure 21. Unclamped Inductive Switching Capability P(PK), PEAK TRANSIENT POWER (W) Crss f = 1MHz VGS = 0V 200 100 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 – T A -----------------------125 10 TA = 25oC SINGLE PULSE 1 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, PULSE WIDTH (s) Figure 23. Single Pulse Maximum Power Dissipation FDMC6890NZ Rev.C 8 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 1E-3 -5 10 -4 10 -3 10 -2 -1 10 10 0 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 24. Transient Thermal Response Curve FDMC6890NZ Rev.C 9 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics FDMC6890NZ Dual N-Channel PowerTrench® MOSFET www.fairchildsemi.com 10 FDMC6890NZ Rev.C The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 FDMC6890NZ Rev. C 11 www.fairchildsemi.com FDMC6890NZ Dual N-Channel PowerTrench® MOSFET TRADEMARKS