Fairchild FDP12N35 350v n-channel mosfet Datasheet

UniFET
TM
FDP12N35 / FDPF12N35
350V N-Channel MOSFET
Features
Description
•
•
•
•
•
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V
Low gate charge ( typical 18 nC)
Low Crss ( typical 15 pF)
Fast switching
Improved dv/dt capability
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
G DS
TO-220
FDP Series
TO-220F
GD S
FDPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
FDP12N35
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
dv/dt
PD
Power Dissipation
FDPF12N35
350
(Note 1)
Unit
V
12
7.2
12*
7.2*
A
A
48
48*
A
± 30
V
(Note 2)
335
mJ
(Note 1)
12
A
Repetitive Avalanche Energy
(Note 1)
13.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
(TC = 25°C)
- Derate above 25°C
135
1.09
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
31.3
0.25
W
W/°C
-55 to +150
°C
300
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP12N35
FDPF12N35
Unit
RθJC
Thermal Resistance, Junction-to-Case
0.92
4.0
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2007 Fairchild Semiconductor Corporation
FDP12N35 / FDPF12N35 Rev. B
1
www.fairchildsemi.com
FDP12N35 / FDPF12N35 350V N-Channel MOSFET
April 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP12N35
FDP12N35
TO-220
-
-
50
FDPF12N35
FDPF12N35
TO-220F
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
350
--
--
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.35
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 350V, VGS = 0V
VDS = 280V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.32
0.38
Ω
--
13
--
S
--
855
1110
pF
--
135
175
pF
--
15
25
pF
--
30
70
ns
--
180
370
ns
--
35
80
ns
--
60
130
ns
--
18
25
nC
--
5
--
nC
--
8
--
nC
12
A
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 6A
gFS
Forward Transconductance
VDS = 40V, ID = 6A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 175V, ID = 12A
RG = 25Ω
(Note 4, 5)
VDS = 280V, ID = 12A
VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
48
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 12A
--
--
1.4
V
trr
Reverse Recovery Time
270
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 12A
dIF/dt =100A/μs
--
Qrr
--
2.3
--
μC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 12A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP12N35 / FDPF12N35 Rev. B
2
www.fairchildsemi.com
FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
ID, Drain Current [A]
10
ID, Drain Current [A]
Top :
0
10
1
10
o
150 C
o
25 C
o
-55 C
* Notes :
1. VDS = 40V
* Notes :
1. 250μs Pulse Test
o
2. 250μs Pulse Test
2. TC = 25 C
-1
0
10
-1
0
10
10
1
10
2
10
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2
10
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
1.2
1.0
0.8
VGS = 10V
0.6
VGS = 20V
0.4
o
0.2
* Note : TJ = 25 C
1
10
o
150 C
o
25 C
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
0
0
5
10
15
20
25
30
10
35
0.2
0.4
0.6
ID, Drain Current [A]
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
1800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
1400
1200
Coss
Ciss
1000
800
600
400
* Note :
1. VGS = 0 V
Crss
VDS = 70V
10
VGS, Gate-Source Voltage [V]
1600
2. f = 1 MHz
200
VDS = 175V
VDS = 280V
8
6
4
2
* Note : ID = 12A
0
0
-1
10
10
0
10
1
FDP12N35 / FDPF12N35 Rev. B
0
2
4
6
8
10
12
14
16
18
20
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2. ID = 250 μA
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
0.5
2. ID = 6 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
50
100
150
Figure 9-1. Maximum Safe Operating Area
for FDP12N35
Figure 9-2. Maximum Safe Operating Area
for FDPF12N35
2
2
10
10
10 μs
10 μs
1
ID, Drain Current [A]
ID, Drain Current [A]
100 μs
1 ms
10
10 ms
100 ms
DC
Operation in This Area
is Limited by R DS(on)
0
10
* Notes :
o
1. TC = 25 C
-1
10
100 μs
1
10
1 ms
10 ms
100 ms
DC
Operation in This Area
is Limited by R DS(on)
0
10
-1
10
* Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
o
2. TJ = 150 C
3. Single Pulse
3. Single Pulse
-2
10
200
o
TJ, Junction Temperature [ C]
-2
0
1
10
10
2
10
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
ID, Drain Current [A]
15
10
5
0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
FDP12N35 / FDPF12N35 Rev. B
4
www.fairchildsemi.com
FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP12N35
ZθJC(t), Thermal Response
10
0
D=0.5
0.2
10
-1
0.1
PDM
0.05
t1
0.02
0.01
t2
* Notes :
o
1. Z θ JC (t) = 0.92 C /W Max.
2. D uty Factor, D =t 1 /t 2
10
-2
10
single pulse
-5
10
-4
3. T JM - T C = P DM * Z θ JC (t)
10
-3
10
-2
10
-1
10
0
10
1
t 1, Square W ave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF12N35
ZθJC(t), Thermal Response
D=0.5
10
0
0.2
0.1
PDM
0.05
t1
10
0.02
0.01
-1
t2
* Notes :
0
1. Z θJC(t) = 4.0 C/W Max.
2. Duty Factor, D=t1/t2
3. T JM - T C = P DM * Zθ JC(t)
single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1, Square Wave Pulse Duration [sec]
FDP12N35 / FDPF12N35 Rev. B
5
www.fairchildsemi.com
FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP12N35 / FDPF12N35 Rev. B
6
www.fairchildsemi.com
FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP12N35 / FDPF12N35 Rev. B
7
www.fairchildsemi.com
FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP12N35 / FDPF12N35 Rev. B
8
www.fairchildsemi.com
(Continued)
TO-220F
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FDP12N35 / FDPF12N35 Rev. B
9
www.fairchildsemi.com
FDP12N35 / FDPF12N35 350V N-Channel MOSFET
Mechanical Dimensions
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
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reserves the right to make changes at any time without notice to
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This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I26
10
FDP12N35 / FDPF12N35 Rev. B
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FDP12N35 / FDPF12N35 350V N-Channel MOSFET
tm
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