PHILIPS NE592D14 Video amplifier Datasheet

Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
DESCRIPTION
PIN CONFIGURATIONS
The NE592 is a monolithic, two-stage, differential output, wideband
video amplifier. It offers fixed gains of 100 and 400 without external
components and adjustable gains from 400 to 0 with one external
resistor. The input stage has been designed so that with the addition
of a few external reactive elements between the gain select
terminals, the circuit can function as a high-pass, low-pass, or
band-pass filter. This feature makes the circuit ideal for use as a
video or pulse amplifier in communications, magnetic memories,
display, video recorder systems, and floppy disk head amplifiers.
Now available in an 8-pin version with fixed gain of 400 without
external components and adjustable gain from 400 to 0 with one
external resistor.
D, N Packages
INPUT 2
1
14
INPUT 1
NC
2
13
NC
G2B GAIN SELECT
3
12
G2A GAIN SELECT
G1B GAIN SELECT
4
11
G1A GAIN SELECT
V-
5
10
V+
NC
6
9
NC
OUTPUT 2
7
8
OUTPUT 1
TOP VIEW
FEATURES
• 120MHz unity gain bandwidth
• Adjustable gains from 0 to 400
• Adjustable pass band
• No frequency compensation required
• Wave shaping with minimal external components
• MIL-STD processing available
D, N Packages
INPUT 2
1
8
INPUT 1
G1B GAIN SELECT
2
7
G1A GAIN SELECT
V-
3
6
V+
OUTPUT 2
4
5
OUTPUT 1
TOP VIEW
APPLICATIONS
• Floppy disk head amplifier
• Video amplifier
• Pulse amplifier in communications
• Magnetic memory
• Video recorder systems
BLOCK DIAGRAM
+V
R1
R2
R8
R10
R9
Q6
Q5
Q4
Q3
R11
OUTPUT 1
INPUT 2
INPUT 1
Q1
Q2
G1A
R3
OUTPUT 2
R12
G1B
R5
G2A
G2B
Q7B
Q8
Q9
Q10
Q11
Q7A
R7A
R7B
R15
R16
R13
R14
-V
April 15, 1992
250
853-0911 06456
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
14-Pin Plastic Dual In-Line Package (DIP)
0 to +70°C
NE592N14
0405B
14-Pin Small Outline (SO) package
0 to +70°C
NE592D14
0175D
8-Pin Plastic Dual In-Line Package (DIP)
0 to +70°C
NE592N8
0404B
8-Pin Small Outline (SO) package
0 to +70°C
NE592D8
0174C
NOTES:
N8, N14, D8 and D14 package parts also available in “High” gain version by adding “H” before
package designation, i.e., NE592HDB
ABSOLUTE MAXIMUM RATINGS
TA=+25°C, unless otherwise specified.
SYMBOL
PARAMETER
RATING
UNIT
VCC
Supply voltage
±8
V
VIN
Differential input voltage
±5
V
VCM
Common-mode input voltage
±6
V
IOUT
Output current
TA
Operating ambient temperature range
TSTG
Storage temperature range
PD MAX
Maximum power dissipation,
10
mA
0 to +70
°C
-65 to +150
°C
D-14 package
0.98
W
D-8 package
0.79
W
N-14 package
1.44
W
N-8 package
1.17
W
TA=25°C (still
air)1
NOTES:
1. Derate above 25°C at the following rates:
D-14 package at 7.8mW/°C
D-8 package at 6.3mW/°C
N-14 package at 11.5mW/°C
N-8 package at 9.3mW/°C
April 15, 1992
251
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
DC ELECTRICAL CHARACTERISTICS
TA=+25°C VSS=±6V, VCM=0, unless otherwise specified. Recommended operating supply voltages VS=±6.0V. All specifications apply to both
standard and high gain parts unless noted differently.
SYMBOL
PARAMETER
AVOL
Differential voltage gain,
TEST CONDITIONS
NE592
UNIT
Min
Typ
Max
250
400
600
V/V
80
100
120
V/V
standard part
Gain 11
Gain
RIN
RL=2kΩ, VOUT=3VP-P
22, 4
Input resistance
Gain 11
Gain 22, 4
capacitance2
10
kΩ
30
kΩ
CIN
Input
IOS
Input offset current
0.4
5.0
µA
IBIAS
Input bias current
9.0
30
µA
VNOISE
Input noise voltage
VIN
Input voltage range
CMRR
Common-mode rejection ratio
Gain 24
Gain
PSRR
24
2.0
BW 1kHz to 10MHz
pF
µVRMS
12
±1.0
VCM±1V, f<100kHz
60
VCM±1V, f=5MHz
V
86
dB
60
dB
70
dB
Supply voltage rejection ratio
Gain 24
VOS
Gain
24
4.0
∆VS=±0.5V
50
Output offset voltage
Gain 1
RL=∞
24
RL=∞
Gain 33
RL=∞
Gain
VCM
Output common-mode voltage
VOUT
Output voltage swing
1.5
V
1.5
V
0.35
0.75
V
3.4
V
RL=∞
2.4
2.9
RL=2kΩ
3.0
4.0
V
20
Ω
differential
ROUT
Output resistance
ICC
Power supply current
RL=∞
NOTES:
1. Gain select Pins G1A and G1B connected together.
2. Gain select Pins G2A and G2B connected together.
3. All gain select pins open.
4. Applies to 14-pin version only.
April 15, 1992
252
18
24
mA
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
DC ELECTRICAL CHARACTERISTICS
DC Electrical CharacteristicsVSS=±6V, VCM=0, 0°C ≤TA≤70°C, unless otherwise specified. Recommended operating supply voltages VS=±6.0V.
All specifications apply to both standard and high gain parts unless noted differently.
SYMBOL
AVOL
PARAMETER
TEST CONDITIONS
NE592
Min
Typ
Max
UNIT
Differential voltage gain,
standard part
Gain 11
RL=2kΩ, VOUT=3VP-P
Gain 22, 4
RIN
250
600
V/V
80
120
V/V
Input resistance
Gain 22, 4
8.0
kΩ
IOS
Input offset current
6.0
µA
IBIAS
Input bias current
40
µA
VIN
Input voltage range
CMRR
Common-mode rejection ratio
Gain 24
PSRR
±1.0
V
VCM±1V, f<100kHz
50
dB
∆VS=±0.5V
50
dB
Supply voltage rejection ratio
Gain 24
VOS
Output offset voltage
Gain 1
Gain 24
Gain 33
VOUT
Output voltage swing differential
ICC
Power supply current
1.5
1.5
1.0
RL=∞
RL=2kΩ
2.8
V
V
RL=∞
27
mA
NOTES:
1. Gain select Pins G1A and G1B connected together.
2. Gain select Pins G2A and G2B connected together.
3. All gain select pins open.
4. Applies to 14-pin versions only.
AC ELECTRICAL CHARACTERISTICS
TA=+25°C VSS=±6V, VCM=0, unless otherwise specified. Recommended operating supply voltages VS=±6.0V. All specifications apply to both
standard and high gain parts unless noted differently.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SA592
Min
Typ
UNIT
Max
Bandwidth
Gain 11
Gain 22, 4
BW
40
90
MHz
MHz
Rise time
tR
Gain 11
Gain 22, 4
VOUT=1VP-P
10.5
4.5
12
ns
ns
Gain 11
Gain 22, 4
VOUT=1VP-P
7.5
6.0
10
ns
ns
Propagation delay
tPD
NOTES:
1. Gain select Pins G1A and G1B connected together.
2. Gain select Pins G2A and G2B connected together.
3. All gain select pins open.
4. Applies to 14-pin versions only.
April 15, 1992
253
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
TYPICAL PERFORMANCE CHARACTERISTICS
Output Voltage Swing as
a Function of Frequency
100
80
70
60
50
40
30
20
10
0
10k
1.6
VS = +6V
TA = 25oC
RL = 1kΩ
6.0
5.0
4.0
3.0
2.0
1.0
1M
10M
100M
1
5 10
50 100
0.4
GAIN 1
0.2
0
0
5
10 15 20 25 30 35
TIME – ns
Supply Current as a
Function of Temperature
Pulse Response as a
Function of Supply Voltage
Pulse Response as a
Function of Temperature
1.6
GAIN 2
TA = 25oC
RL = 1kΩ
OUTPUT VOLTAGE – V
24
20
16
VS = +8V
1.0
VS = +6V
0.8
VS = +3V
0.6
0.4
0.2
0
12
8
4
5
6
7
8
GAIN 2
VS = +6V
RL = 1kΩ
1.4
OUTPUT VOLTAGE – V
1.4
1.2
1.0
Tamb = 0oC
0.8
TA = 25oC
0.6
0.4
TA = 70oC
0.2
0
-0.2
-0.2
-0.4
-15 -10 -5
-0.4
0
5
10 15 20 25 30 35
-15 -10 -5
0
5
10 15 20 25 30 35
SUPPLY VOLTAGE – +V
TIME – ns
TIME – ns
Voltage Gain as a
Function of Temperature
Gain vs. Frequency as a
Function of Temperature
Voltage Gain as a
Function of Supply Voltage
VS = +6V
1.08
1.06
1.04
1.02
1.00
GAIN 2
0.98
0.96
0.94
GAIN 1
0.92
0.90
1.4
60
GAIN 2
VS = +6V
RL = 1kΩ
50
40
30
TA = –55oC
20
TA = 25oC
10
TA = 125oC
0
20
30
40
50
TEMPERATURE – oC
60
70
1.2
1.1
GAIN 2
1.0
0.9
0.8
GAIN 1
0.7
0.6
0.5
-10
10
Tamb = 25oC
1.3
RELATIVE VOLTAGE GAIN
SINGLE ENDED VOLTAGE GAIN – dB
1.10
RELATIVE VOLTAGE GAIN
GAIN 2
0.6
FREQUENCY – MHz
1.2
April 15, 1992
0.8
-0.4
-15 -10 -5
500 1000
1.6
0
1.0
FREQUENCY – Hz
TA = 25oC
3
1.2
-0.2
0
100k
VS = +6V
TA = 25oC
RL = 1k
1.4
OUTPUT VOLTAGE – V
GAIN 2
VS = +6V
TA = 25oC
90
28
SUPPLY CURRENT – mA
Pulse Response
7.0
OUTPUT VOLTAGE SWING – Vpp
COMMON-MODE REJECTION RATIO – dB
Common-Mode Rejection Ratio
as a Function of Frequency
0.4
1
5 10
50 100
FREQUENCY – MHz
254
500 1000
3
4
5
6
7
SUPPLY VOLTAGE – +V
8
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Voltage Gain
Adjust Circuit
Voltage Gain as a
Function of RADJ (Figure 3)
60
1000
GAIN 2
TA = 25oC
RL = 1kΩ
50
DIFFERENTIAL VOLTAGE GAIN – V/V
SINGLE ENDED VOLTAGE GAIN – dB
Gain vs. Frequency as a
Function of Supply Voltage
0.2µF
14
40
1
12
11
3
30
8
592
4
7
0.2µF
VS = +8V
20
51
VS = +6V
10
0
51
1k
RADJ
1k
VS = +3V
VS = +6V TA = 25oC
-10
1
5
10
50 100
VS = +6V
f = 100kHz
TA = 25oC
FIGURE 3
100
10
1
.1
.01
500 1000
1
10
100
Supply Current as a
Function of Temperature
70
17
16
15
14
20
60
100
50
40
30
20
10
0
INPUT RESISTANCE – KΩ
5.0
4.0
3.0
2.0
40
30
20
0
0
April 15, 1992
2.0
1.0
3.0
5K 10K
4.0
5.0
6.0
7.0
8.0
SUPPLY VOLTAGE – +V
100
50
10
LOAD RESISTANCE – Ω
CURRENT
Input Noise Voltage
as a Function of
Source Resistance
GAIN 2
VS = +6V
60
1.0
500 1K
3.0
20 40 60 80 100 120 140 160 180 200
70
VS = +6V
TA = 25oC
50 100
VOLTAGE
4.0
Input Resistance as a
Function of Temperature
7.0
10
5.0
DIFFERENTIAL INPUT VOLTAGE – mV
Output Voltage Swing as a
Function of Load Resistance
6.0
TA = 25oC
6.0
0
0
140
TEMPERATURE – oC
OUTPUT VOLTAGE SWING – Vpp
OUTPUT SINK CURRENT – mA
18
OUTPUT VOLTAGE SWING – V OR
19
7.0
VS = +6V
TA = 25oC
GAIN 2
60
INPUT NOISE VOLTAGE –µ Vrms
SUPPLY CURRENT – mA
OVERDRIVE RECOVERY TIME – ns
VS = +6V
-20
1M
Output Voltage and Current
Swing as a Function of
Supply Voltage
Differential Overdrive
Recovery Time
21
-60
10K 100K
RADJ – Ω
FREQUENCY – MHz
20
1K
GAIN 2
VS = +6V
TA = 25oC
BW = 10MHz
90
80
70
60
50
40
30
20
10
0
-60
-20 0
20
60
TEMPERATURE – oC
255
100
140
1
10
100
1K
SOURCE RESISTANCE – Ω
10K
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
Phase Shift as a
Function of Frequency
Phase Shift as a
Function of Frequency
0
GAIN 2
VS = +6V
TA = 25oC
-5
VS = +6V
TA = 25oC
-50
PHASE SHIFT – DEGREES
PHASE SHIFT – DEGREES
0
-10
-15
-20
-100
-150
GAIN 2
-200
GAIN 1
-250
-300
-350
-25
0
1
2
3
4
5
6
7
8
9
1
10
10
FREQUENCY – MHz
100
1000
FREQUENCY – MHz
Voltage Gain as a
Function of Frequency
Voltage Gain as a
Function of Frequency
60
40
VS = +6V
TA = 25oC
GAIN 3
40
30
VOLTAGE GAIN – dB
VOLTAGE GAIN – dB
VS = +6V
Tamb = 25oC
RL = 1KΩ
GAIN 1
50
GAIN 2
30
20
10
20
10
0
-10
-20
-30
0
-40
1
10
100
-50
.01
1000
FREQUENCY – MHz
592
51Ω
RL
VOUT
51Ω
0.2µF
ein
592
0.2µF
eout eout
51Ω
April 15, 1992
51Ω
1k
1
10
FREQUENCY – MHz
TEST CIRCUITS TA = 25°C, unless otherwise specified.
VIN
.1
1k
256
100
1000
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
TYPICAL APPLICATIONS
+6
2re
11
14
NOTE:
V 0(s)
v 1(s)
V1
10
V0
592
1
7
1.4 10 4
Z(S) 2r e
5
4
Z
1.4 10 4
Z(S) 32
-6
+6
Basic Configuration
0.2µF
+5
+6
11
14
10
9
4
V1
7
592
Q
11
10
7
8
7
2
C
5
2KΩ
Q
-6
3
AMPLITUDE: 1-10 mV p-p
FREQUENCY: 1-4 MHz
NOTE:
6
For frequency F1 << 1/2 π (32) C
-6
V
READ HEAD
DIFFERENTIATOR/AMPLIFIER
O
1.4 x 10 4C
ZERO CROSSING DETECTOR
dVi
dT
Differentiation with High
Common-Mode Noise Rejection
Disc/Tape Phase-Modulated Readback Systems
FILTER NETWORKS
R
L
LOW PASS
R
C
HIGH PASS
R
V0 (s) TRANSFER
V1 (s) FUNCTION
FILTER
TYPE
Z NETWORK
L
1.4 10 4
L
1
s RL
1.4 10 4
R
s
s 1RC
BAND PASS
1.4 10 4
L
BAND REJECT
1.4 10 4
R
C
s
s 2 RLs 1LC
L
R
C
NOTES:
In the networks above, the R value used is assumed to include 2re, or approximately 32Ω.
S = jω
ω = 2πf
April 15, 1992
0.2µF
5
4
5
4
V0
1
592
1
2KΩ
8
529
1
14
10
8
257
s 2 1LC
s 2 1LC sRC
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