Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150 Main Product Characteristics General Description The MBR2150 is a high voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. IF(AV) 2A VRRM 150V TJ(MAX) VF(MAX) (IF=2A, TC=125°C) 150°C 0.67V The MBR2150 is available in standard DO-214AC and DO-15 packages. Mechanical Characteristics • • • • Features • • • • • Low Forward Voltage: 0.67V at 125°C High Surge Capacity Operating Junction Temperature: 150°C Guard−ring for Stress Protection Lead Free Packages Available • • Case: Epoxy, Molded Epoxy Meets UL 94V-0 @ 0.125in Weight (Approximately): 1.9Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purpose: 260°C Maximum for 10 Seconds Applications • • • DO-214AC Power Supply − Output Rectification Power Management Instrumentation DO-15 Figure 1. Package Types of MBR2150 Jul. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150 Pin Configuration VR Package (DO-214AC) VG Package (DO-15) Cathode line by marking Cathode Anode Cathode line by marking Cathode Anode Figure 2. Pin Configuration of MBR2150 (Top View) Ordering Information MBR2150 - E1: Lead Free G1: Green Circuit Type Package VR: DO-214AC VG: DO-15 Blank: Bulk TR: Ammo and Tape & Reel Part Number Package DO-214AC DO-15 Lead Free Green Marking ID Lead Green Free Packing Type MBR2150VRTR-E1 MBR2150VRTR-G1 2150VE 2150VR Tape & Reel MBR2150VG-E1 MBR2150VG-G1 2150VG 2150GG Bulk MBR2150VGTR-E1 MBR2150VGTR-G1 2150VG 2150GG Ammo BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with “G1” suffix are available in green packages. Jul. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit 150 V 2 A IFSM 75 A Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC=TBD) Non Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Half Wave, Single Phase, 60Hz) Operating Junction Temperature Range (Note 2) VRRM VRWM VR IF(AV) TJ -65 to 150 °C Storage Temperature Range TSTG -65 to 150 °C Voltage Rate of Change (Rated VR) ESD (Machine Model=C) ESD (Human Body Model=3B) dv/dt 10000 400 8000 V/μs V V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/θJA. Recommended Operating Conditions Parameter Symbol θJL Condition Junction to Lead Maximum1Thermal Resistance θJA Jul. 2011 Junction1to1Ambient Rev. 1. 1 Value DO-214AC DO-15 Unit 23 DO-214AC 90 DO-15 80 °C/W BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150 Electrical Characteristics Parameter Symbol Maximum Instantaneous Forward Voltage Drop (Note 3) VF (MAX) Maximum Instantaneous Reverse Current (Note 3) IR (MAX) Conditions Value IF=2A, TC=25°C 0.85 IF=2A, TC=125°C 0.67 Rated DC TC=25°C Voltage, Rated DC TC=125°C Voltage, Unit V 0.1 mA 2.0 Note 3: Pulse Test: Pulse Width=300μs, Duty Cycle≤2.0%. Typical Performance Characteristics 10 o TJ=150 C IR, Instantaneous Reverse Current (μA) IF, Instantaneous Forward Current (A) 3 10 1 0.1 o TJ=25 C o TJ=125 C o TJ=150 C o TJ=125 C 1 10 0 10 -1 10 o TJ=25 C -2 10 -3 10 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 20 40 60 80 100 120 140 160 VR, Instantaneous Reverse Voltage (V) VF, Instantaneous Forward Voltage (V) Figure 4. Typical Forward Characteristics Jul. 2011 2 10 Figure 5. Typical Reverse Characteristics Rev. 1. 1 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150 Mechanical Dimensions DO-214AC Jul. 2011 Rev. 1. 1 Unit: mm(inch) BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR2150 Mechanical Dimensions (Continued) DO-15 Jul. 2011 Rev. 1. 1 Unit: mm(inch) BCD Semiconductor Manufacturing Limited 6 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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