BCD MBR2150VGTR-G1 High voltage power schottky rectifier Datasheet

Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2150
Main Product Characteristics
General Description
The MBR2150 is a high voltage dual Schottky
rectifier suited for switch mode power supplies and
other power converters. This device is intended for
use in medium voltage operation, and particularly, in
high frequency circuits where low switching losses
and low noise are required.
IF(AV)
2A
VRRM
150V
TJ(MAX)
VF(MAX)
(IF=2A, TC=125°C)
150°C
0.67V
The MBR2150 is available in standard DO-214AC
and DO-15 packages.
Mechanical Characteristics
•
•
•
•
Features
•
•
•
•
•
Low Forward Voltage: 0.67V at 125°C
High Surge Capacity
Operating Junction Temperature: 150°C
Guard−ring for Stress Protection
Lead Free Packages Available
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94V-0 @ 0.125in
Weight (Approximately): 1.9Grams
Finish: All External Surfaces Corrosion
Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purpose:
260°C Maximum for 10 Seconds
Applications
•
•
•
DO-214AC
Power Supply − Output Rectification
Power Management
Instrumentation
DO-15
Figure 1. Package Types of MBR2150
Jul. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2150
Pin Configuration
VR Package
(DO-214AC)
VG Package
(DO-15)
Cathode line by
marking
Cathode
Anode
Cathode line
by marking
Cathode
Anode
Figure 2. Pin Configuration of MBR2150 (Top View)
Ordering Information
MBR2150
-
E1: Lead Free
G1: Green
Circuit Type
Package
VR: DO-214AC
VG: DO-15
Blank: Bulk
TR: Ammo and Tape & Reel
Part Number
Package
DO-214AC
DO-15
Lead Free
Green
Marking ID
Lead
Green
Free
Packing
Type
MBR2150VRTR-E1
MBR2150VRTR-G1
2150VE
2150VR
Tape & Reel
MBR2150VG-E1
MBR2150VG-G1
2150VG
2150GG
Bulk
MBR2150VGTR-E1
MBR2150VGTR-G1
2150VG
2150GG
Ammo
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Jul. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2150
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
150
V
2
A
IFSM
75
A
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated VR, TC=TBD)
Non Repetitive Peak Surge Current (Surge Applied at Rated
Load Conditions Half Wave, Single Phase, 60Hz)
Operating Junction Temperature Range (Note 2)
VRRM
VRWM
VR
IF(AV)
TJ
-65 to 150
°C
Storage Temperature Range
TSTG
-65 to 150
°C
Voltage Rate of Change (Rated VR)
ESD (Machine Model=C)
ESD (Human Body Model=3B)
dv/dt
10000
400
8000
V/μs
V
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ <
1/θJA.
Recommended Operating Conditions
Parameter
Symbol
θJL
Condition
Junction to Lead
Maximum1Thermal
Resistance
θJA
Jul. 2011
Junction1to1Ambient
Rev. 1. 1
Value
DO-214AC
DO-15
Unit
23
DO-214AC
90
DO-15
80
°C/W
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2150
Electrical Characteristics
Parameter
Symbol
Maximum Instantaneous Forward
Voltage Drop (Note 3)
VF (MAX)
Maximum Instantaneous Reverse
Current (Note 3)
IR (MAX)
Conditions
Value
IF=2A, TC=25°C
0.85
IF=2A, TC=125°C
0.67
Rated
DC
TC=25°C
Voltage,
Rated
DC
TC=125°C
Voltage,
Unit
V
0.1
mA
2.0
Note 3: Pulse Test: Pulse Width=300μs, Duty Cycle≤2.0%.
Typical Performance Characteristics
10
o
TJ=150 C
IR, Instantaneous Reverse Current (μA)
IF, Instantaneous Forward Current (A)
3
10
1
0.1
o
TJ=25 C
o
TJ=125 C
o
TJ=150 C
o
TJ=125 C
1
10
0
10
-1
10
o
TJ=25 C
-2
10
-3
10
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
20
40
60
80
100
120
140
160
VR, Instantaneous Reverse Voltage (V)
VF, Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Characteristics
Jul. 2011
2
10
Figure 5. Typical Reverse Characteristics
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2150
Mechanical Dimensions
DO-214AC
Jul. 2011
Rev. 1. 1
Unit: mm(inch)
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2150
Mechanical Dimensions (Continued)
DO-15
Jul. 2011
Rev. 1. 1
Unit: mm(inch)
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