ISC MJ900 Isc silicon pnp darlington power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO=-60V(Min.)
·High DC Current Gain: hFE= 1000(Min.)@IC=-3A
·Low Collector Saturation Voltage: VCE (sat)=-2.0V(Max.)@ IC=-3A
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continunous
-8
A
IB
Base Current-Continunous
-0.1
A
PC
Collector Power Dissipation
@TC=25℃
90
W
Tj
Junction Temperature
200
℃
-55~+200
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.94
℃/W
isc Website:www.iscsemi.cn
MJ900
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
MJ900
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC=-0.1A; IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC=-3A; IB=-12mA
-2.0
V
V CE(sat)-2
Collector-Emitter Saturation Voltage
IC=-8A; IB=-40mA
-4.0
V
VBE(on)
Base-Emitter On Voltage
IC=-3A, VCE=-3V
-2.5
V
ICER
Collector Cutoff Current
VCE=-60V; RBE=1kΩ
VCE=-60V; RBE=1kΩ; TC=150℃
-1.0
-5.0
mA
ICEO
Collector Cutoff Current
VCE=-30V; IB= 0
-0.5
mA
IEBO
Emitter Cutoff Current
VEB=-5V; IC= 0
-2.0
mA
hFE-1
DC Current Gain
IC=-3A, VCE=-3V
1000
hFE-2
DC Current Gain
IC=-4A, VCE=- 3V
750
isc Website:www.iscsemi.cn
CONDITIONS
MIN
TYP.
MAX
-60
UNIT
V
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