Diodes DMN2041LSD Dual n-channel enhancement mode mosfet Datasheet

DMN2041LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
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Features
Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
SO-8
D1
D1
S1
TOP VIEW
D2
G1
D1
S2
D2
G2
D2
TOP VIEW
Internal Schematic
G1
G2
S1
S2
N-Channel MOSFET
N-Channel MOSFET
Symbol
VDSS
VGSS
Units
V
V
IDM
Value
20
±12
7.63
4.92
30
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C
Symbol
PD
RθJA
Value
1.16
107.4
Unit
W
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 3)
Steady
State
TA = 25°C
TA = 85°C
ID
Pulsed Drain Current (Note 4)
A
A
Thermal Characteristics
Notes:
1.
2.
3.
4.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Repetitive rating, pulse width limited by function temperature.
DMN2041LSD
Document number: DS31964 Rev. 2 - 2
1 of 6
www.diodes.com
October 2009
© Diodes Incorporated
DMN2041LSD
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
1
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
0.5
RDS (ON)
-
|Yfs|
VSD
-
1.2
28
41
1.2
V
Static Drain-Source On-Resistance
19
25
6
0.7
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 6.0A
VGS = 2.5V, ID = 5.2A
VDS = 10V, ID = 6A
VGS = 0V, IS = 1.7A
Ciss
Coss
Crss
Rg
-
550
88
81
1.34
-
Total Gate Charge (10V)
Qg
-
15.6
-
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
7.2
1.0
1.9
4.69
13.19
22.10
6.43
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Notes:
mΩ
S
V
pF
Ω
nC
Test Condition
VDS =10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 10V, VDS = 10V,
ID = 6.0A
nC
VGS = 4.5 V, VDS = 10V,
ID = 6.0A
ns
VDD = 10V, VGEN = 4.5V,
Rg = 1Ω, ID = 6.7A
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
20
20
VGS = 10V
VGS = 2.0V
16
VGS = 4.5V
VGS = 3.0V
VGS = 2.5V
12
8
4
VDS = 5V
16
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics
12
8
T A = 150°C
4
VGS = 1.5V
TA = 125°C
T A = 85°C
0
TA = -55°C
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DMN2041LSD
Document number: DS31964 Rev. 2 - 2
5
T A = 25°C
0
0.5
1
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE (V)
3
Fig. 2 Typical Transfer Characteristics
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RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.06
0.05
VGS = 1.8V
0.04
0.03
VGS = 2.5V
0.02
VGS = 10V
VGS = 4.5V
0.01
0
0
4
8
12
16
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
VGS = 4.5V
0.04
TA = 150°C
TA = 125°C
TA = 85°C
0.02
1.2
VGS = 4.5V
ID = 10A
0.8
VGS = 2.5V
ID = 5A
0.6
-50
TA = 25°C
TA = -55°C
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
1.0
0.06
20
1.6
4
8
12
16
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
20
0.08
0.06
0.04
VGS = 2.5V
ID = 5A
0.02
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
VGS = 4.5V
ID = 10A
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
1.6
20
1.4
16
1.2
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMN2041LSD
1.0
ID = 1mA
0.8
0.6
ID = 250µA
0.4
TA = 25°C
12
8
4
0.2
0
-50
0
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMN2041LSD
Document number: DS31964 Rev. 2 - 2
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www.diodes.com
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
October 2009
© Diodes Incorporated
1,000
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
DMN2041LSD
f = 1MHz
C, CAPACITANCE (pF)
Coss
100
Crss
10
0
5
10
15
TA = 150°C
1,000
TA = 125°C
100
TA = 85°C
10
TA = 25°C
TA = -55°C
1
2
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
Ciss
10,000
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 111°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
10
100
1,000
Fig. 11 Transient Thermal Response
Ordering Information
(Note 7)
Part Number
DMN2041LSD-13
Notes:
Case
SO-8
Packaging
2500/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
8
5
Logo
N2041LD
Part no.
YY WW
Xth week: 01~52
Year: “09” = 2009
1
4
( Top View )
DMN2041LSD
Document number: DS31964 Rev. 2 - 2
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October 2009
© Diodes Incorporated
DMN2041LSD
0.254
NEW PRODUCT
Package Outline Dimensions
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Suggested Pad Layout
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMN2041LSD
Document number: DS31964 Rev. 2 - 2
5 of 6
www.diodes.com
October 2009
© Diodes Incorporated
DMN2041LSD
NEW PRODUCT
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMN2041LSD
Document number: DS31964 Rev. 2 - 2
6 of 6
www.diodes.com
October 2009
© Diodes Incorporated
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