TSC MBRF1650 Isolated schottky barrier rectifier Datasheet

MBRF1635 thru MBRF16150
Taiwan Semiconductor
CREAT BY ART
Isolated Schottky Barrier Rectifiers
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
ITO-220AC
Case: ITO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
1635
1645
1650
1660
1690 16100 16150
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
90
100
150
V
Maximum RMS voltage
VRMS
24
31
35
42
63
70
105
V
Maximum DC blocking voltage
VDC
35
45
50
60
90
100
150
V
Maximum average forward rectified current
IF(AV)
16
A
Peak repetitive forward current
(Rated VR, square wave, 20KHz)
IFRM
32
A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
A
Peak repetitive reverse surge current (Note 1)
IRRM
1
VF
0.63
0.75
0.85
0.95
0.57
0.65
0.75
0.92
0.3
0.1
7.5
5
Maximum instantaneous forward voltage (Note 2)
IF=16A, TJ=25℃
IF=16A, TJ=125℃
Maximum reverse current @ Rated VR
TJ=25 ℃
TJ=125 ℃
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
IR
dV/dt
0.5
0.5
15
10
10000
A
V
mA
V/μs
O
RθJC
3
TJ
- 55 to +150
O
C
- 55 to +150
O
C
TSTG
C/W
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Document Number: DS_D1309010
Version: I13
MBRF1635 thru MBRF16150
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
AEC-Q101
PART NO.
PACKING CODE
QUALIFIED
MBRF16xx
(Note 1)
Prefix "H"
GREEN COMPOUND
CODE
C0
Suffix "G"
PACKAGE
PACKING
ITO-220AC
50 / Tube
Note 1: "xx" defines voltage from 35V (MBRF1635) to 150V (MBRF16150)
EXAMPLE
AEC-Q101
PREFERRED P/N PART NO.
GREEN COMPOUND
PACKING CODE
QUALIFIED
MBRF1660 C0
MBRF1660
C0
MBRF1660 C0G
MBRF1660
C0
MBRF1660HC0
MBRF1660
H
DESCRIPTION
CODE
G
Green compound
C0
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD A
CURRENT (A)
16
12
8
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
4
0
50
60
70
80
90
100
110
120
130
140
150
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT PER LEG
PEAK FORWARD SURGE CURRENT (A)
20
150
8.3ms Single Half Sine Wave
JEDEC Method
125
100
75
50
25
0
0
1
CASE TEMPERATURE (oC)
100
NUMBER OF CYCLES AT 60 Hz
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
100
Pulse Width=300μs
1% Duty Cycle
TJ=125℃
10
10
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
10
TJ=125℃
TJ=25℃
1
0.1
MBRF1635-1645
MBRF1650-1660
MBRF1690-16150
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
Document Number: DS_D1309010
1
1.1 1.2
1
TJ=25℃
0.1
0.01
MBRF1635-1645
MBRF1650-16150
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: I13
MBRF1635 thru MBRF16150
Taiwan Semiconductor
CREAT BY ART
FIG. 5 TYPICAL JUNCTION CAPACITANCE
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
100
f=1.0MHz
Vsig=50mVp-p
TRANSIENT THERMAL
IMPEDANCE (℃/W)
JUNCTION CAPACITANCE (pF) A
10000
10
1000
1
0.1
100
0.1
1
10
100
0.01
0.1
1
10
100
T-PULSE DURATION(s)
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
4.30
4.70
0.169
0.185
B
2.50
3.10
0.098
0.122
C
2.30
2.90
0.091
0.114
D
0.46
0.76
0.018
0.030
E
6.30
6.90
0.248
0.272
F
9.60
10.30
0.378
0.406
G
3.00
3.40
0.118
0.134
H
0.00
1.60
0.000
0.063
I
0.95
1.45
0.037
0.057
J
0.50
0.90
0.020
0.035
K
2.40
3.20
0.094
0.126
L
14.80
15.50
0.583
0.610
M
-
4.10
-
0.161
N
-
1.80
-
0.071
O
12.60
13.80
0.496
0.543
P
4.95
5.20
0.195
0.205
MARKING DIAGRAM
P/N
= Specific Device Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Document Number: DS_D1309010
Version: I13
MBRF1635 thru MBRF16150
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1309010
Version: I13
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