MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS-8 OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 3 3.9±0.3 2 2.5±0.1 0.8 MIN 1 1.5±0.1 0.5±0.07 0.4 +0.03 –0.05 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 • • • • IT (RMS) ..................................................................... 0.8A VDRM ....................................................................... 400V IFGT !, IRGT !, IRGT # ............................................. 5mA IFGT # ..................................................................... 10mA 3 1 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL SOT-89 APPLICATION Hybrid IC, solid state relay, control of household equipment such as electric fan · washing machine, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter Unit 8 (marked “B•”) VDRM Repetitive peak off-state voltage ✽1 400 V VDSM Non-repetitive peak off-state voltage ✽1 500 V Conditions Parameter Symbol IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Ta=40°C ✽4 ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Ratings Unit 0.8 A 8 A 0.26 A2s 1 W 0.1 W Peak gate voltage 6 V IGM Peak gate current 1 Tj Junction temperature –40 ~ +125 –40 ~ +125 Storage temperature Tstg — Weight Typical value 48 A °C °C mg ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 1.0 mA VTM On-state voltage Tc=25°C, ITM=1.2A, Instantaneous measurement — — 2.0 V VFGT ! ! — — 2.0 V VRGT ! @ — — 2.0 V — — 2.0 V VRGT # Gate trigger voltage ✽2 # Tj=25°C, VD =6V, RL=6Ω, RG=330Ω VFGT # $ — — 2.0 IFGT ! ! — — 5 mA — — 5 mA — — 5 mA — — 10 mA 0.1 — — V — — 65 °C/ W ✽3 — — V/µs IRGT ! IRGT # @ Gate trigger current ✽2 # Tj=25°C, VD =6V, RL=6Ω, RG=330Ω $ IFGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM R th (j-a) Thermal resistance Junction to case ✽4 (dv/dt) c Critical-rate of rise of off-state commutating voltage V ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. ✽4. Mounted on 25mm × 25mm × t0.7mm ceramic plate with solder. Voltage class (dv/dt) c VDRM (V) Min. Commutating voltage and current waveforms (inductive load) Test conditions Unit SUPPLY VOLTAGE 1. Junction temperature Tj =125°C 8 2 400 2. Rate of decay of on-state commutating current (di/dt)c=–0.4A/ms V/µs TIME MAIN CURRENT (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD =400V TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 101 7 5 4 3 2 Tj = 125°C 100 7 5 4 3 2 10–1 Tj = 25°C 0 1 2 3 4 ON-STATE VOLTAGE (V) 5 8 6 4 2 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 102 7 5 3 2 VGM = 10V PGM = 1W 101 7 5 3 2 PG(AV) = 0.1W VGT 100 7 5 3 2 IGM = 1A IFGT I, IRGT I, IRGT III IFGT III VGD = 0.2V 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) GATE CHARACTERISTICS 103 7 5 4 3 2 TYPICAL EXAMPLE IFGT III IFGT I IRGT III IRGT I 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS TYPICAL EXAMPLE VFGT I VFGT III 102 7 5 4 3 2 VRGT I VRGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) 103 7 5 4 3 2 102 7 5 3 2 JUNCTION TO AMBIENT JUNCTION TO CASE 101 7 5 3 2 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 2.0 160 1.6 1.2 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 0.8 0.4 0 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 103 7 5 3 2 JUNCTION TEMPERATURE (°C) 0 0.4 0.8 1.2 1.6 RMS ON-STATE CURRENT (A) 2.0 CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE NATURAL CONVECTION RESISTIVE, 120 INDUCTIVE 100 LOADS 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 101 7 5 3 2 100 7 5 3 2 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION + – T2 , G TYPICAL EXAMPLE 80 120 160 TYPICAL EXAMPLE Tj = 125°C 120 I QUADRANT 100 80 III QUADRANT 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 140 BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) TYPICAL EXAMPLE LACHING CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 60 100 7 5 3 2 DISTRIBUTION JUNCTION TEMPERATURE (°C) T2+, G+ TYPICAL T2– , G– EXAMPLE T2– , G+ 10–1 0 40 –40 160 101 7 5 3 2 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, JUNCTION TEMPERATURE (°C) 100 (%) 102 7 5 3 2 102 7 5 3 2 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) LACHING CURRENT (mA) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE COMMUTATION CHARACTERISTICS 102 VOLTAGE WAVEFORM 7 TYPICAL t 5 EXAMPLE VD 3 (dv/dt)C Tj = 125°C 2 CURRENT WAVEFORM IT = 1A (di/dt) C τ = 500µs 101 IT τ 7 VD = 200V t 5 f = 3Hz 3 2 III QUADRANT 100 7 MINIMUM 5 CHARACI QUADRANT 3 2 TERISTICS VALUE 10–1 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 TYPICAL EXAMPLE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω A 6V V 102 7 IRGT I IRGT III IFGT I 5 IFGT III 4 3 2 101 0 10 2 3 4 5 7 101 TEST PROCEDURE 1 6Ω 2 3 4 5 7 102 A 6V RG RG V TEST PROCEDURE 2 6Ω A 6V V RG A 6V V RG GATE CURRENT PULSE WIDTH (µs) TEST PROCEDURE 3 TEST PROCEDURE 4 Feb.1999