MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING BCR16A, BCR16B, BCR16C, BCR16E Dimensions in mm 1 φ2.0 MIN 3 φ8.7 MAX 3 MAX 2 6.5 MAX 1 14 MAX 3 19 MAX φ2.0 MIN φ11.1 MAX 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL • IT (RMS) ...................................................................... 16A • VDRM ..............................................................400V/500V • IFGT !, IRGT !, IRGT # ........................................... 30mA BCR16A APPLICATION Contactless AC switches, light dimmer, on/off and speed control of small induction motors, on/off control of traffic signals, on/off control of copier lamps, solid state relay, microwave ovens MAXIMUM RATINGS Symbol Voltage class Parameter voltage ✽1 VDRM Repetitive peak off-state VDSM Non-repetitive peak off-state voltage ✽1 Symbol Parameter Unit 8 10 400 500 V 600 700 V Conditions IT (RMS) RMS on-state current Commercial frequency, sine full wave, 360° conduction ITSM Surge on-state current I2t I2t for fusing PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Ratings BCR16A, B, C Tc =99°C BCR16E Tb=71°C Unit 16 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 170 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 121 A2s 5 W 0.5 W Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature –20 ~ +125 A °C ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE MAXIMUM RATINGS (continue) Symbol T stg Parameter Test conditions Storage temperature — Weight (Typical value) — Soldering temperature Ratings Unit –20 ~ +125 °C BCR16A 3.0 BCR16B 8.5 BCR16C 8.5 BCR16E — Viso g 9.5 BCR16A only, 10 sec. °C 230 kg·cm 30 Mounting torque BCR16C only (Typical value) Isolated voltage BCR16E only, Ta=25°C, AC 1 minute, T2 Terminal to base 2.94 N·m 1500 V ELECTRICAL CHARACTERISTICS Symbol IDRM VTM Parameter Min. Typ. Max. Unit Repetitive peak off-state current Tj=125°C, V DRM applied — — 3.0 mA On-state voltage Tc=25°C, Tb=25°C (BCR16E only), ITM=25A , Instantaneous measurement — — 1.6 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Limits Test conditions Gate trigger voltage ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 30 mA — — 30 mA — — 30 mA 0.2 — — V Junction to case (BCR16A, BCR16B, BCR16C) — — 1.2 °C/W Junction to base (BCR16E) — — 2.5 °C/W ✽3 — — V/µs IRGT ! Gate trigger current ✽2 @ IRGT # VGD Gate non-trigger voltage R th (j-c) R th (j-b) (dv/dt) c Tj=25°C, VD =6V, RL=6Ω, RG=330Ω # Tj=125°C, VD=1/2VDRM Thermal resistance Critical-rate of rise of off-state commutating voltage ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. Voltage class VDRM (V) 8 400 (dv/dt) c Symbol Min. R — Unit 1. Junction temperature Tj =125°C L 10 V/µs R 10 Test conditions — 2. Rate of decay of on-state commutating current (di/dt)c=–8A/ms 3. Peak off-state voltage VD =400V 500 L 10 Commutating voltage and current waveforms (inductive load) SUPPLY VOLTAGE MAIN CURRENT TIME (di/dt)c TIME MAIN VOLTAGE (dv/dt)c TIME VD Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING Dimensions in mm BCR16B BCR16C BCR16E 5.3 MAX (16.2) 2 φ2.5 MIN 1 2 M6×1.0 φ2.0 MIN φ8.7 MAX 3 1.8 MAX 10 MAX 16 MAX φ2.0 MIN 22 MAX 21 MAX φ8.7 MAX 1 3 MIN 20.5 MAX φ8.7 MAX 10 MAX 16 MAX 1 1.9 MAX 3 φ2.0 MIN 1.8 MAX 8 MAX 15.5 MAX 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 3 φ2.0 MIN (φ16) 23±0.2 φ33 MAX 8.5 MAX 23±0.2 33 MAX 2 20 MAX 14 20 MAX 1 3 21 MAX 2-φ3.2 MIN 2-φ3.2 MIN 2 PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 103 7 TC = 25°C 5 Tb = 25°C 3 2 102 7 5 3 2 101 7 5 3 2 180 160 140 120 100 80 60 40 20 0 100 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 GATE VOLTAGE (V) 3 2 VGM = 10V 101 7 5 3 VGT = 1.5V 2 PG(AV) = 0.5W PGM = 5.0W IGM = 2A 100 7 5 3 2 IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) GATE TRIGGER CURRENT • VOLTAGE (Tj = t°C) GATE TRIGGER CURRENT • VOLTAGE (Tj = 25°C) GATE CHARACTERISTICS 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 100 (%) ON-STATE VOLTAGE (V) 2 3 4 5 7 101 GATE TRIGGER CURRENT·VOLTAGE VS. JUNCTION TEMPERATURE 200 TEST PROCEDURE Ι, ΙΙ AND ΙΙΙ 180 160 GATE TRIGGER CURRENT 140 120 100 80 60 GATE TRIGGER VOLTAGE 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 TRANSIENT THERMAL IMPEDANCE (°C/W) 102 2 3 5 7 103 1.6 MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO BASE) (BCR16E) 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 40 160 35 140 CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) (BCR16A, B, C) 360° CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 30 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 BCR16A, BCR16B, 80 BCR16C 60 BCR16E 40 360° CONDUCTION 20 RESISTIVE, INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16A) 160 160 160 t4.0 140 120 120 t3.0 120 80 80 t2.0 ALL FINS ARE 100 80 60 40 20 0 BLACK PAINTED ALUMINUM AND GREASED CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION : MOUNTING ON FIN WITH SOLDER : MOUNTING PLATE WITHOUT GREASE 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16B) 160 AMBIENT TEMPERATURE (°C) AMBIENT TEMPERATURE (°C) RMS ON-STATE CURRENT (A) 140 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 160 160 t4.0 120 120 120 t3.0 100 80 80 t2.0 80 60 40 20 0 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION : MOUNTING ON FIN WITHOUT GREASE : INSULATED PLATE WITH GREASE 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 NATURAL 160 160 t4.0 CONVECTION 120 120 120 t3.0 100 80 80 t2.0 80 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE : MOUNTING ON FIN WITH GREASE : MICA PLATE WITH GREASE 60 40 20 0 0 2 4 6 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16E) 160 AMBIENT TEMPERATURE (°C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16C) 160 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 120 160 160 t4.0 120 120 t3.0 80 80 t2.0 100 80 60 40 CURVES APPLY 20 REGARDLESS OF CONDUCTION 0 ANGLE 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω A 6V A 6V RG V TEST PROCEDURE 1 V RG TEST PROCEDURE 2 6Ω A 6V V RG TEST PROCEDURE 3 Feb.1999