MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM-14 LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3KM-14 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 2.6 ± 0.2 ➀➁➂ ➁ .................................................................. 3A ● VDRM ................................................................. 700V ● IFGT ! , IRGT ! , IRGT # ..................................... 30mA ● Viso .................................................................. 2000V ● IT (RMS) ➀ 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ✽ Measurement point of case temperature ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ ➂ GATE TERMINAL TO-220FN APPLICATION Contactless AC switches, light dimmer, electric blankets, control of household equipment such as electric fan, solenoid drivers, small motor control, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter V DRM Repetitive peak off-state V DSM Non-repetitive peak off-state voltage✽1 Symbol 700 840 Parameter Conditions I T (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=108°C I TSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I 2t I 2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM I GM Peak gate voltage Peak gate current Tj T stg Junction temperature Storage temperature — Viso Weight Isolation voltage Unit 14 voltage✽1 Typical value Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case V V Ratings Unit 3 30 A A 3.7 A2s 3 W 0.3 6 W V 0.5 –40 ~ +125 A °C –40 ~ +125 2.0 °C g 2000 V ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM-14 LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. — Typ. — Max. 2.0 Unit I DRM Repetitive peak off-state current Tj=125°C, VDRM applied V TM V FGT ! On-state voltage Tc=25°C, ITM=4.5A, Instantaneous measurement — — — — 1.6 1.5 V RGT ! V RGT # Gate trigger voltage Tj=25°C, VD=6V, RL=6Ω, RG =330Ω — — — — 1.5 1.5 V V — — 30 — — — — 30 30 mA mA 0.2 — — — — 4.0 °C/ W ✽2 — — V/µs ! @ # I FGT ! I RGT ! Gate trigger current I RGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM Rth (j-c) Thermal resistance Junction to case ✽3 (dv/dt)c Critical-rate of rise of off-state commutating voltage ! @ Tj=25°C, VD=6V, RL=6Ω, RG =330Ω # mA V V mA V ✽2. The critical-rate of rise of the off-state commutating voltage is shown in the table below. ✽3. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W. Voltage class VDRM (V) 14 (dv/dt)c Symbol Min. R — 700 V/µs L Test conditions Unit 5 Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125°C SUPPLY VOLTAGE 2. Rate of decay of on-state commutating current (di/dt)c=–1.5A/ms MAIN CURRENT 3. Peak off-state voltage VD=400V MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD PERFORMANCE CURVES 102 7 5 3 2 RATED SURGE ON-STATE CURRENT 40 TC = 25°C 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999