MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5AS OUTLINE DRAWING Dimensions in mm 6.5 ∗ 2.3 MIN 1.0 MAX 0.9 MAX 5.5±0.2 TYPE NAME 1.0 2.3 10 MAX 4 VOLTAGE CLASS 0.5±0.1 1.5±0.2 5.0±0.2 0.5±0.2 2.3 0.8 2.3 ∗ Measurement point of case temperature 1 2 3 24 • IT (RMS) ........................................................................ 5A • VDRM ..............................................................400V/600V • IFGT !, IRGT !, IRGT # ........................................... 30mA 1 1 2 3 3 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL MP-3 APPLICATION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VDRM Repetitive peak off-state voltage ✽1 400 600 V VDSM Non-repetitive peak off-state voltage ✽1 500 720 V Conditions Parameter Symbol IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc =103°C ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Ratings Unit 5 A 50 A 10.4 A2s 3 W 0.3 W Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Storage temperature Tstg — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 0.26 g ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=7A, Instantaneous measurement — — 1.8 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 30 mA — — 30 mA — — 30 mA IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — Rth (j-c) Thermal resistance Junction to case ✽4 — — 3 °C/ W (dv/dt)c Critical-rate of rise of off-state commutating voltage ✽3 — — V/µs V ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. ✽4. Case temperature is measured on the T2 terminal. Voltage class VDRM (V) 8 400 (dv/dt) c Min. SUPPLY VOLTAGE 1. Junction temperature Tj=125°C 5 12 Commutating voltage and current waveforms (inductive load) Test conditions Unit V/µs 600 TIME 2. Rate of decay of on-state commutating current (di/dt)c=–2.5A/ms MAIN CURRENT 3. Peak off-state voltage VD=400V MAIN VOLTAGE (di/dt)c TIME TIME (dv/dt)c VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 100 7 5 3 2 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 Tj = 125°C 101 7 5 3 2 Tj = 25°C 100 7 5 3 2 10–1 0.6 1.4 2.2 3.0 3.8 ON-STATE VOLTAGE (V) 4.6 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 101 7 5 3 VGT = 1.5V 2 100 7 5 3 2 100 (%) PGM = 3W PGM = 0.3W IGM = 2A IFGT I IRGT I IRGT III 103 7 5 4 3 2 IRGT I 102 IFGT I 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 8 160 7 140 6 360° CONDUCTION 5 RESISTIVE, INDUCTIVE 4 LOADS 3 2 1 0 IRGT III JUNCTION TEMPERATURE (°C) 103 7 5 4 3 2 0 TYPICAL EXAMPLE GATE CURRENT (mA) CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) VGD = 0.2V 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 102 7 5 3 2 VGM = 10V TRANSIENT THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) GATE CHARACTERISTICS 1 2 3 4 5 6 7 RMS ON-STATE CURRENT (A) 8 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 1 2 3 0 4 5 6 7 8 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS MEDIUM POWER USE 120 100 140 140 t2.3 80 80 t2.3 80 60 NATURAL 40 CONVECTION RESISTIVE CURVES APPLY 20 REGARDLESS OF INDUCTIVE, CONDUCTION ANGLE LOADS 0 0 8 1 2 3 4 5 6 7 40 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) 103 7 5 3 2 102 7 5 4 3 2 101 7 5 4 3 2 VD = 12V ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 102 –60 –40 –20 0 20 40 60 80 100 120 140 101 7 5 3 2 60 RMS ON-STATE CURRENT (A) 104 7 5 3 2 102 7 5 3 2 80 RMS ON-STATE CURRENT (A) 105 7 TYPICAL EXAMPLE 5 3 2 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE T2+, G+ TYPICAL T2– , G– EXAMPLE ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION T2+, G– TYPICAL EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 100 (%) 103 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 0 BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) LACHING CURRENT (mA) 170 170 t2.3 AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE ALUMINUM 140 100 (%) AMBIENT TEMPERATURE (°C) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS MEDIUM POWER USE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 140 120 100 80 I QUADRANT 60 III QUADRANT 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE COMMUTATION CHARACTERISTICS 102 7 5 4 3 2 100 (%) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 103 7 5 4 3 2 (dv/dt)C t VD CURRENT WAVEFORM (di/dt)C IT τ 101 7 5 4 3 MINIMUM 2 CHARACTERISTICS VALUE 0 10 0 2 3 4 5 7 101 10 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH VOLTAGE WAVEFORM TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz t I QUADRANT III QUADRANT 2 3 4 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω TYPICAL EXAMPLE IRGT III A 6V IRGT I 102 7 5 4 3 2 V TEST PROCEDURE 1 IFGT I A 6V RG V RG TEST PROCEDURE 2 6Ω A 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) V RG TEST PROCEDURE 3 Feb.1999