Fairchild FGA50N100BNT 1000v, 50a npt-trench igbt co-pak Datasheet

FGA50N100BNT
tm
1000V, 50A NPT-Trench IGBT CO-PAK
Features
General Description
•
•
•
•
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction and
switching characteristics as well as enhanced avalanche
ruggedness. These devices are well suited for UPS, PFC, I-H
Jar, induction Heater and Home Appliance.
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
High Input Impedance
RoHS Compliant
Applications
•
UPS, PFC, I-H Jar, Induction Heater, Home Appliance.
TO-3P
G C E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
@ TC = 25oC
Collector Current
IC
@ TC =
Collector Current
ICM (1)
PD
100oC
Pulsed Collector Current
Maximum Power Dissipation
@ TC = 25oC
Maximum Power Dissipation
o
@ TC = 100 C
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Units
1000
V
± 25
V
50
A
35
A
200
A
156
W
63
Operating Junction Temperature
TJ
Ratings
W
-55 to +150
o
C
-55 to +150
o
C
300
o
C
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
0.8
o
C/W
RθJA
Thermal Resistance, Junction to Ambient
-
40.0
o
C/W
©2009 Fairchild Semiconductor Corporation
FGA50N100BNT Rev. A
1
www.fairchildsemi.com
FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
March 2009
Device Marking
Device
Package
Packaging
Type
FGA50N100BNT
FGA50N100BNTTU
TO-3PN
Rail / Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA
1000
-
-
V
ICES
Collector Cut-Off Current
VCE = 1000V, VGE = 0V
-
-
1.0
mA
IGES
G-E Leakage Current
VGE = ±25V, VCE = 0V
-
-
±500
nA
IC = 60mA, VCE = VGE
4.0
5.5
7.0
V
-
1.5
1.8
V
2.5
2.9
V
-
V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 10A, VGE = 15V
IC = 60A, VGE = 15V
IC = 60A, VGE = 15V,
TC = 125oC
-
3.1
-
6000
-
pF
VCE = 10V, VGE = 0V,
f = 1MHz
-
260
-
pF
-
200
-
pF
-
34
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
FGA50N100BNT Rev. A
VCC = 600V, IC = 60A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCE = 600V, IC = 60A,
VGE = 15V, TC = 25oC
2
-
68
-
ns
-
243
-
ns
-
65
100
ns
-
257
350
nC
-
45
-
nC
-
95
-
nC
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FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
200
200
o
TC = 25 C
o
20V
15V
TC = 125 C
20V
10V
15V
10V
160
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
9V
120
80
8V
40
160
9V
120
8V
80
7V
40
7V
VGE = 6V
VGE = 6V
0
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
0
10
0
Figure 3. Typical Saturation Voltage
Characteristics
200
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
160
Collector Current, IC [A]
Collector Current, IC [A]
10
Figure 4. Transfer Characteristics
200
TC = 25 C
o
TC = 125 C
120
80
o
160 TC = 25 C
o
TC = 125 C
120
80
40
40
0
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
2
7
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4
6
8
10
Gate-Emitter Voltage,VGE [V]
12
Figure 6. Saturation Voltage vs. VGE
4.5
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
2
4
6
8
Collector-Emitter Voltage, VCE [V]
90A
60A
3.0
30A
IC = 10A
1.5
Common Emitter
o
TC = -40 C
16
12
60A
8
30A
4
90A
IC = 10A
1.0
25
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
FGA50N100BNT Rev. A
3
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
60A
8
30A
90A
4
IC = 10A
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
TC = 125 C
16
12
60A
8
IC = 10A
0
20
0
Figure 9. Capacitance Characteristics
90A
30A
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
8000
Common Emitter
Capacitance [pF]
6000
Gate-Emitter Voltage, VGE [V]
o
Cies
Common Emitter
VGE = 0V, f = 1MHz
o
4000
TC = 25 C
2000
Coes
VCC = 200V
9
400V
600V
6
3
Cres
0
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
55
110
165
220
Gate Charge, Qg [nC]
275
Figure 12. Load Current vs. Frequency
120
500
VCC = 600V
Load Current [A]
load Current : peak of square wave
100
Collector Current, Ic [A]
TC = 25 C
12
10µs
10
100µs
1ms
1
100
80
60
10 ms
40
DC
*Notes:
0.1
o
1. TC = 25 C
: 50%
20 Duty cycle
o
o
T = 100 C
2. TJ = 150 C
3. Single Pulse
0.01
1
C
Power Dissipation = 63W
0
0
10
10
100
1000 3000
Collector-Emitter Voltage, VCE [V]
FGA50N100BNT Rev. A
4
1
2
10
10
Frequency [kHz]
3
10
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FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
Figure 14. Turn-off Characteristics vs.
Gate Resistance
300
2000
1000
100
Switching Time [ns]
Switching Time [ns]
td(off)
tr
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
100
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
o
TC = 25 C
o
TC = 25 C
o
TC = 125 C
10
10
o
20
30
40
Gate Resistance, RG [Ω]
TC = 125 C
10
10
50
20
30
40
50
Gate Resistance, RG [Ω]
Figure 15. Turn-on Characteristics vs.
Collector Current
Figure 16. Turn-off Characteristics vs.
Collector Current
200
1000
100
td(off)
Switching Time [ns]
Switching Time [ns]
tr
td(on)
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VGE = 15V, RG = 10Ω
100
o
TC = 25 C
tf
o
TC = 125 C
o
TC = 25 C
o
TC = 125 C
10
10
20
30
40
50
60
70
80
90
10
10
100
20
30
Collector Current, IC [A]
40
50
60
70
80
90
100
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
Fig 18. Switching Loss vs. Collector Current
30
50
Common Emitter
VCC = 600V, VGE = 15V
10
Switching Loss [mJ]
IC = 60A
Switching Loss [mJ]
o
TC = 25 C
o
10
TC = 125 C
Eon
Eoff
Eon
Eoff
1
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
o
TC = 25 C
o
TC = 125 C
1
10
FGA50N100BNT Rev. A
20
30
40
Gate Resistance, RG [Ω]
0.1
10
50
20
30
40
50
60
70
80
90
100
Collector Current, IC [A]
5
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FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
Typical Performance Characteristics
FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
Typical Performance Characteristics
Figure 19. Turn off Switching SOA Characterisics
250
Collector Current, IC [A]
100
10
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
1
10
1000 3000
100
Collector-Emitter Voltage, VCE [V]
Figure 20.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGA50N100BNT Rev. A
6
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FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
Mechanical Dimensions
TO-3PN
FGA50N100BNT Rev. A
7
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Datasheet contains the design specifications for product development. Specifications may change in
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Rev. I40
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