MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE A B U - M4 THD (2 TYP.) R K P E M G B A S - M8 THD (2 TYP.) C E Q J C Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G L H T - DIA. (4 TYP.) F N D E E C G E Outline Drawing and Circuit Diagram Inches Millimeters A 5.12 130.0 L 0.79 20.0 B 4.33±0.01 110.0±0.25 M 0.77 19.5 C 1.840 46.75 N 0.75 19.0 Dimensions Inches Millimeters Dimensions D 1.73+0.04/–0.02 44.0+1.0/–0.5 P 0.61 15.6 E 1.46+0.04/–0.02 37.0+1.0/–0.5 Q 0.51 13.0 F 1.42 36.0 R 0.35 9.0 G 1.25 31.8 S M8 Metric M8 H 1.18 30.0 T 0.26 Dia. Dia. 6.5 J 1.10 28.0 U M4 Metric M4 K 1.08 27.5 Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1000HA-24H is a 1200V (VCES), 1000 Ampere Single IGBT Module. Type CM Current Rating Amperes VCES Volts (x 50) 1000 24 Sep.1998 MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM1000HA-24H Units Junction Temperature Tj –40 to +150 °C Storage Temperature Tstg –40 to +125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 1000 Amperes ICM 2000* Amperes Collector Current (TC = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (TC = 25°C) IE 1000 Amperes Peak Emitter Current** IEM 2000* Amperes Maximum Collector Dissipation (TC = 25°C) Pc 5800 Watts Mounting Torque, M8 Main Terminal – 8.83 ~ 10.8 N·m Mounting, Torque M6 Mounting – 1.96 ~ 2.94 N·m Mounting, Torque M4 Terminal – 0.98 ~ 1.47 N·m – 1600 Grams Viso 2500 Vrma Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 6 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 100mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 1000A, VGE = 15V – 2.7 3.6** Volts IC = 1000A, VGE = 15V, Tj = 150°C – 2.4 – Volts Total Gate Charge QG VCC = 600V, IC = 1000A, VGE = 15V – 5000 – nC Emitter-Collector Voltage VEC IE = 1000A, VGE = 0V – – 3.5 Volts Min. Typ. Max. Units – – 200 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies Output Capacitance Coes – – 70 nF Reverse Transfer Capacitance Cres – – 40 nF Resistive Turn-on Delay Time td(on) – – 600 ns Load Rise Time Switching Turn-off Delay Time Time Fall Time VGE = 0V, VCE = 10V tr VCC = 600V, IC = 1000A, – – 1500 ns td(off) VGE1 = VGE2 = 15V, RG = 3.3Ω – – 1200 ns – – 350 ns tf Diode Reverse Recovery Time trr IE = 1000A, diE/dt = –2000A/µs – – 250 ns Diode Reverse Recovery Charge Qrr IE = 1000A, diE/dt = –2000A/µs – 7.4 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.022 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.050 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.018 °C/W Sep.1998 MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) 2000 VGE = 20 (V) 1600 Tj = 25°C 15 5 2000 12 VGE = 15V VCE = 10V Tj = 25°C Tj = 125°C 1600 1200 10 800 9 4 VCE(sat), (VOLTS) IC, (AMPERES) IC, (AMPERES) 11 400 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 1200 800 3 2 1 400 Tj = 25°C Tj = 125°C 8 7 0 0 2 4 6 0 0 10 8 0 4 8 VCE, (VOLTS) 16 20 800 1200 1600 2000 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 Tj = 25°C Tj = 25°C 8 IC = 2000A IC = 1000A 4 2 Cies, Coes, Cres, (nF) 6 IE, (AMPERES) 103 0 102 Cies 102 Coes 101 IC = 400A 0 4 8 12 16 101 1.0 20 1.5 2.0 2.5 3.0 100 10-1 3.5 VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE (TYPICAL) 103 VCC = 600V VGE = ±15V RG = 3.3 Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) 102 Irr VCC = 400V 101 101 102 VCC = 600V 12 8 4 di/dt = -2000A/µsec Tj = 25°C 103 VGE, (VOLTS) t rr, (ns) 102 Irr, (AMPERES) tr t rr 102 20 103 td(off) tf 101 101 101 VEC, (VOLTS) td(on) 102 100 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 16 103 Cres VGE = 0V 104 SWITCHING TIME, (ns) 400 IC, (AMPERES) 104 10 0 VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 12 103 IE, (AMPERES) 101 104 0 0 2000 4000 6000 8000 QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM1000HA-24H 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.022°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.05°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998