Fairchild FGH40N60SF 600v, 40a field stop igbt Datasheet

FGH40N60SF
tm
600V, 40A Field Stop IGBT
Features
General Description
• High current capability
Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
• Low saturation voltage: VCE(sat) =2.3V @ IC = 40A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Inverter, UPS, SMPS, PFC
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
PD
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
TL
V
80
A
A
@ TC = 25 C
@ TC = 25oC
290
W
Maximum Power Dissipation
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
± 20
A
o
Storage Temperature Range
V
40
Maximum Power Dissipation
Tstg
Units
600
120
o
Pulsed Collector Current
@ TC = 100 C
116
Operating Junction Temperature
TJ
Ratings
W
-55 to +150
o
C
-55 to +150
o
C
300
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
0.43
o
C/W
RθJA
Thermal Resistance, Junction to Ambient
-
40
o
C/W
©2008 Fairchild Semiconductor Corporation
FGH40N60SF Rev.A
1
www.fairchildsemi.com
FGH40N60SF 600V, 40A Field Stop IGBT
March 2009
Device Marking
Device
Package
Packaging
Type
FGH40N60SF
FGH40N60SFTU
TO-247
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
∆BVCES
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
-
0.6
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
µA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250µA, VCE = VGE
4.0
5.0
6.5
V
IC = 40A, VGE = 15V
-
2.3
2.9
V
IC = 40A, VGE = 15V,
TC = 125oC
-
2.5
-
V
-
2110
-
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
-
200
-
pF
-
60
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
25
-
ns
tr
Rise Time
-
42
-
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
td(on)
tr
Rise Time
-
43
-
ns
td(off)
Turn-Off Delay Time
-
120
-
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
0.48
-
mJ
Ets
Total Switching Loss
-
1.62
-
mJ
-
115
-
ns
-
27
54
ns
-
1.13
-
mJ
-
0.31
-
mJ
Total Switching Loss
-
1.44
-
mJ
Turn-On Delay Time
-
24
-
ns
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
FGH40N60SF Rev. A
VCC = 400V, IC = 40A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 40A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 40A,
VGE = 15V
2
-
30
-
ns
-
1.14
-
mJ
-
120
-
nC
-
14
-
nC
-
58
-
nC
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FGH40N60SF 600V, 40A Field Stop IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
120
Figure 2. Typical Output Characteristics
120
o
o
TC = 25 C
15V
80
20V
15V
100
Collector Current, IC [A]
100
Collector Current, IC [A]
TC = 125 C
20V
12V
60
40
10V
80
60
10V
40
20
20
VGE = 8V
VGE = 8V
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
0
0.0
6.0
Figure 3. Typical Saturation Voltage
Characteristics
6.0
120
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
Collector Current, IC [A]
o
Collector Current, IC [A]
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
80
TC = 25 C
60
o
TC = 125 C
40
20
TC = 25 C
o
TC = 125 C
80
40
0
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
6
4
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
3.5
80A
3.0
2.5
40A
2.0
IC = 20A
1.5
1.0
25
13
3
Common Emitter
o
TC = -40 C
16
12
8
40A
4
80A
IC = 20A
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
FGH40N60SF Rev. A
8
10
12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
4.0
Collector-Emitter Voltage, VCE [V]
12V
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGH40N60SF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
8
40A
80A
4
IC = 20A
0
TC = 125 C
16
12
8
40A
IC = 20A
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
4
20
Figure 9. Capacitance Characteristics
20
15
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
Ciss
o
Gate-Emitter Voltage, VGE [V]
4000
Capacitance [pF]
8
12
16
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
5000
o
TC = 25 C
3000
Coss
2000
1000
Crss
TC = 25 C
12
Vcc = 100V
200V
300V
9
6
3
0
0
0.1
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
50
100
Gate Charge, Qg [nC]
150
Figure 12. Turn-on Characteristics vs.
Gate Resistance
400
200
100
10µs
100
Switching Time [ns]
Collector Current, Ic [A]
80A
4
100µs
10
1ms
10 ms
1
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 25 C
o
TC = 125 C
0.01
10
1
FGH40N60SF Rev. A
10
100
Collector-Emitter Voltage, VCE [V]
1000
0
4
10
20
30
40
Gate Resistance, RG [Ω]
50
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FGH40N60SF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
500
5500
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
o
1000
o
TC = 25 C
Switching Time [ns]
Switching Time [ns]
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 125 C
td(off)
100
tf
10
20
30
40
50
td(on)
40
Gate Resistance, RG [Ω]
80
Figure 16. Switching Loss vs. Gate Resistance
10
500
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VCC = 400V, VGE = 15V
o
IC = 40A
TC = 25 C
o
TC = 125 C
Switching Loss [mJ]
o
Switching Time [ns]
60
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
td(off)
100
tf
TC = 25 C
o
TC = 125 C
1
Eoff
40
60
0
80
10
Collector Current, IC [A]
Figure 17. Switching Loss vs. Collector Current
20
30
40
Gate Resistance, RG [Ω]
50
Figure 18. Load Current vs. Frequency
30
140
Common Emitter
VGE = 15V, RG = 10Ω
VCC = 400V
load Current : peak of square wave
120
o
TC = 25 C
Eon
o
TC = 125 C
Load Current [A]
10
Eon
0.2
0.3
10
20
Switching Loss [mJ]
tr
100
10
20
10
0
TC = 125 C
Eoff
1
100
80
60
40
Duty cycle : 50%
20
0.1
o
T = 100 C
C
20
30
40
50
60
70
1
Collector Current, IC [A]
FGH40N60SF Rev. A
Power Dissipation = 116W
0
80
5
10
100
Frequency [kHz]
1000
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FGH40N60SF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
FGH40N60SF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 19.Turn off Switching
SOA Characteristics
200
Collector Current, IC [A]
100
10
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 20. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.01
0.05
0.02
0.01
0.1
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
FGH40N60SF Rev. A
6
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FGH40N60SF 600V, 40A Field Stop IGBT
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
FGH40N60SF Rev. A
7
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Advance Information
Formative / In Design
Preliminary
First Production
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Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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Rev. I40
© 2008 Fairchild Semiconductor Corporation
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