MITSUBISHI IGBT MODULES CM15TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. (2 TYP.) C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN GVN EVN EUN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V GuN EuN Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking EwP W GwN GvN EvN EwN N Outline Drawing and Circuit Diagram Dimensions Inches A 4.21 B 3.66±0.01 C 3.19 D 1.77 E 1.18 F 1.11 G 1.05 H J Millimeters Dimensions Inches Millimeters 107.0 K 0.79 20.0 93.0±0.2 L 0.71 18.0 81.0 M 0.69 17.5 45.0 N 0.69 17.5 30.0 P 0.63 16.0 28.2 Q 0.55 14.0 26.6 R 0.30 7.5 0.85 21.5 S 0.83 21.0 0.22 Dia. Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Dia. 5.5 Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM15TF-24H is a 1200V (VCES), 15 Ampere Six-IGBT Module. Type CM Current Rating Amperes VCES Volts (x 50) 15 24 Sep.1998 MITSUBISHI IGBT MODULES CM15TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM15TF-24H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) IC 15 Amperes ICM 30* Amperes IE 15 Amperes Peak Emitter Current** IEM 30* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 150 Watts Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N·m – 260 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC =1. 5mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 15A, VGE = 15V – 2.5 3.4** Volts IC = 15A, VGE = 15V, Tj = 150°C – – Volts Total Gate Charge QG VCC = 600V, IC = 15A, VGE = 15V – 75 – nC Emitter-Collector Voltage VEC IE = 15A, VGE = 0V – – 3.5 Test Conditions Min. Typ. Max. – – 3 nF VGE = 0V, VCE = 10V – – 1.1 nF 0.6 nF 2.25 Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Units Reverse Transfer Capacitance Cres – – Resistive Turn-on Delay Time td(on) – – 100 ns Load Rise Time Switching Turn-off Delay Time Times tr VCC = 600V, IC = 150A, – – 200 ns td(off) VGE1 = VGE2 = 15V, RG = 21Ω – – 150 ns Fall Time tf – – 350 ns Diode Reverse Recovery Time trr IE = 15A, diE/dt = –30A/µs – – 250 ns Diode Reverse Recovery Charge Qrr IE = 15A, diE/dt = –30A/µs – 0.11 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Max. Units Rth(j-c) Per IGBT – – 0.80 °C/W Rth(j-c) Per FWDi – – 1.40 °C/W Rth(c-f) Per Module, Thermal Grease Applied – – 0.058 °C/W Sep.1998 MITSUBISHI IGBT MODULES CM15TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE 25 30 15 11 20 15 10 10 9 5 7 VCE = 10V Tj = 25°C Tj = 125°C 25 20 15 10 5 8 0 0 0 2 4 6 8 4 3 2 1 4 8 12 16 20 5 0 10 15 20 25 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) IC = 15A 4 2 IC = 6A 0 4 8 12 16 3 2 101 7 5 3 2 2.5 2.0 3.0 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) tf 102 td(on) VCC = 600V VGE = ±15V RG = 21Ω Tj = 125°C tr 101 COLLECTOR CURRENT, IC, (AMPERES) 102 100 Coes 10-1 Cres Irr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE di/dt = -30A/µsec Tj = 25°C t rr 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 101 102 10-2 10-1 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) td(off) 101 100 1.5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 Cies VGE = 0V 100 1.0 20 CAPACITANCE, Cies, Coes, Cres, (nF) 6 30 101 100 10-1 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 30A 102 7 Tj = 25°C 5 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 8 EMITTER CURRENT, IE, (AMPERES) Tj = 25°C 0 SWITCHING TIME, (ns) VGE = 15V Tj = 25°C Tj = 125°C 0 0 10 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 30 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 15A 16 VCC = 400V 12 VCC = 600V 8 4 0 0 20 40 60 80 100 120 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM15TF-24H 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.8°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) MEDIUM POWER SWITCHING USE INSULATED TYPE 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 1.4°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998