MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE CM200DU-24NFH ¡IC ................................................................... 200A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 108 93 ±0.25 14 14 E2 G2 14 E2 C2E1 G1 E1 CIRCUIT DIAGRAM C1 E2 25 C1 62 6 15 6 CM 48 ±0.25 E2 G2 G1 E1 C2E1 25 21.5 2.5 3-M6 NUTS 4-φ6. 5 MOUTING HOLES 4 18 2.8 29 +1.0 –0.5 LABEL 0.5 0.5 4 7 7.5 18 8.5 7 0.5 22 18 0.5 Feb.2004 MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — (Tj = 25°C) Parameter Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Ratings 1200 ±20 200 400 200 400 830 1300 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 (Note 2) (Note 2) (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Unit V V A A A A W W °C °C V N•m N•m g (Tj = 25°C) Test conditions Parameter Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 4.5 6 7.5 V IGES Gate leakage current Collector-emitter saturation voltage (Note 4) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage VGE = VGES, VCE = 0V Tj = 25°C IC = 200A, VGE = 15V Tj = 125°C — — — — — — — — — — — — — — — — — — — 1.6 — 5.0 5.0 — — — 900 — — — — — 7.5 — — — 0.04 — — — 0.7 6.5 — 32 2.7 0.6 — 300 80 500 150 250 — 3.5 0.15 0.24 — µA VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Thermal resistance*1 Contact thermal resistance Thermal resistance*4 VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE1 = VGE2 = 15V RG = 1.6Ω, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) External gate resistance 0.095*3 0.14*3 16 mA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W °C/W Ω *1 : TC measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : TC’ measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. Feb.2004 MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 400 14 VCE = 10V COLLECTOR CURRENT IC (A) 13 15 12 300 250 11 200 150 10 100 9 50 8 0 2 4 6 8 350 300 250 200 150 100 50 0 10 Tj = 25°C Tj = 125°C 0 5 10 15 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 9 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE=20 (V) 350 0 VGE = 15V 8 Tj = 25°C Tj = 125°C 7 6 5 4 3 2 1 0 EMITTER CURRENT IE (A) Tj = 25°C 0 10 IC = 200A 4 IC = 80A 2 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 102 7 5 7 5 Tj = 125°C 3 Tj = 25°C 2 102 7 5 3 2 0 IC = 400A 6 103 101 Tj = 25°C 8 0 50 100 150 200 250 300 350 400 CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) 400 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE VEC (V) 3 2 Cies 101 7 5 3 2 Coes 100 7 5 3 2 Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb.2004 MITSUBISHI IGBT MODULES CM200DU-24NFH HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) 7 5 3 2 td(off) td(on) 102 7 5 tr tf 3 2 101 7 5 3 2 100 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load 2 3 5 7 103 REVERSE RECOVERY TIME trr (ns) 103 5 5 3 3 Irr 2 102 7 5 3 2 101 1 10 2 3 5 7 102 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse TC = 25°C 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 7 5 3 Per unit base = 2 7 5 3 2 Rth(j–c) = 0.15°C/W 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 7 5 3 2 2 102 trr 7 Conditions: 5 VCC = 600V VGE = ±15V 3 RG = 1.6Ω 2 Tj = 25°C Inductive load 101 2 3 5 7 103 COLLECTOR CURRENT IC (A) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 Tj = 25°C 7 7 REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE 7 5 3 2 Single Pulse TC = 25°C 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 7 5 3 Per unit base = 2 Rth(j–c) = 0.24°C/W 10–3 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 200A 15 VCC = 400V VCC = 600V 10 5 0 0 200 400 600 800 1000 1200 1400 GATE CHARGE QG (nC) Feb.2004