IXYS IXFH320N10T2 Trencht2 hiperfet power mosfet Datasheet

Advance Technical Information
IXFH320N10T2
IXFT320N10T2
TrenchT2TM HiperFETTM
Power MOSFET
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXFH)
G
Symbol
Test Conditions
VDSS
TJ = 25°C to 175°C
100
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
100
V
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
ID25
TC = 25°C (Chip Capability)
320
A
ILRMS
Lead Current Limit, RMS
160
A
IDM
TC = 25°C, Pulse Width Limited by TJM
800
A
D
Maximum Ratings
G
S
D (Tab)
IA
TC = 25°C
160
A
TC = 25°C
1.5
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
15
V/ns
PD
TC = 25°C
1000
W
-55 ... +175
°C
z
z
TJ
TJM
175
°C
Tstg
-55 ... +175
°C
300
260
°C
°C
1.13 / 10
Nm/lb.in.
6
4
g
g
TL
Tsold
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Md
Mounting Torque (TO-247)
Weight
TO-247
TO-268
G = Gate
S = Source
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
100
High Current Handling Capability
Fast Intrinsic Diode
z
Avalanche Rated
z
Fast Intrinsic Diode
z
Low RDS(on)
Advantages
z
VGS(th)
VDS = VGS, ID = 250μA
2.0
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
TJ = 150°C
VGS = 10V, ID = 100A, Notes 1 & 2
z
V
4.0
V
±200
nA
25
μA
z
z
z
z
z
z
z
z
© 2010 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
High Power Density
Applications
1.75 mA
3.5 mΩ
D
= Drain
Tab = Drain
Features
z
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
D (Tab)
S
TO-268 (IXFT)
EAS
RDS(on)
= 100V
= 320A
Ω
≤ 3.5mΩ
Synchronous Recification
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
DS100237(2/10)
IXFH320N10T2
IXFT320N10T2
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 10V, ID = 60A, Note 1
80
130
S
26
nF
2250
pF
450
pF
1.48
Ω
36
ns
46
ns
73
ns
177
ns
430
nC
110
nC
125
nC
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
td(on)
tr
td(off)
tf
Gate Input Resistance
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.15 °C/W
RthJC
RthCH
TO-247 (IXFH) Outline
TO-247
°C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
IF = 150A, VGS = 0V
IRM
QRM
98
-di/dt = 100A/μs
VR = 50V
320
A
1200
A
1.2
V
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXFT) Outline
ns
6.6
A
320
nC
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Includes lead resistance.
Terminals: 1 - Gate
3 - Source
2 - Drain
4 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFH320N10T2
IXFT320N10T2
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
320
400
VGS = 15V
10V
8V
7V
280
300
200
ID - Amperes
ID - Amperes
240
6V
160
120
5V
80
250
6V
200
150
5V
100
40
50
4V
0
4V
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 150ºC
Fig. 4. RDS(on) Normalized to ID = 160A Value
vs. Junction Temperature
350
4.0
2.8
VGS = 15V
10V
8V
7V
300
VGS = 10V
2.4
R DS(on) - Normalized
250
ID - Amperes
VGS = 15V
10V
7V
350
6V
200
150
5V
100
I
2.0
D
= 320A
I
D
= 160A
1.6
1.2
0.8
50
4V
0
0.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50
-25
0
25
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 160A
vs. Drain Current
75
100
125
150
175
Fig. 6. Drain Current vs. Case Temperature
180
3.2
VGS = 10V
160
External Lead Current limit
2.8
140
TJ = 175ºC
120
2.4
ID - Amperes
R DS(on) - Normalized
50
TJ - Degrees Centigrade
2.0
100
80
60
1.6
40
1.2
TJ = 25ºC
20
0.8
0
0
50
100
150
200
250
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
300
350
400
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXFH320N10T2
IXFT320N10T2
Fig. 8. Transconductance
Fig. 7. Input Admittance
220
240
TJ = - 40ºC
200
200
180
25ºC
140
TJ = 150ºC
25ºC
- 40ºC
120
g f s - Siemens
ID - Amperes
160
100
80
160
150ºC
120
80
60
40
40
20
0
0
2.5
3.0
3.5
4.0
4.5
5.0
0
5.5
20
40
60
80
VGS - Volts
120
140
160
180
200
220
240
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
350
10
300
250
9
VDS = 50V
8
I G = 10mA
I D = 160A
7
VGS - Volts
IS - Amperes
100
200
150
TJ = 150ºC
6
5
4
3
100
TJ = 25ºC
2
50
1
0
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
1.5
50
100
150
200
250
300
350
400
450
QG - NanoCoulombs
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
1,000
100,000
RDS(on) Limit
f = 1 MHz
Ciss
Coss
1,000
100µs
External Lead Limit
100
10,000
ID - Amperes
Capacitance - PicoFarads
25µs
1ms
10
TJ = 175ºC
TC = 25ºC
Single Pulse
Crss
100
DC
10ms
100ms
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
10
VDS - Volts
100
IXFH320N10T2
IXFT320N10T2
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
300
300
RG = 1Ω , VGS = 10V
I
D
= 200A
200
RG = 1Ω , VGS = 10V
VDS = 50V
150
100
I
D
VDS = 50V
250
t r - Nanoseconds
t r - Nanoseconds
250
200
TJ = 125ºC
150
TJ = 25ºC
100
= 100A
50
50
0
0
25
35
45
55
65
75
85
95
105
115
40
125
60
80
100
TJ - Degrees Centigrade
600
td(on) - - - -
70
I D = 100A
I D = 200A
50
100
0
3
4
5
6
7
8
9
tf
80
I D = 100A
200
150
10
100
25
35
45
55
105
800
350
95
TJ = 125ºC
90
RG = 1Ω, VGS = 10V
85
VDS = 50V
200
80
TJ = 25ºC
50
125
75
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
350
I D = 200A
200
I D = 100A
200
0
180
400
VDS = 50V
300
60
200
160
450
250
100
140
td(off) - - - -
400
65
0
tf
300
50
120
115
500
70
100
105
TJ = 125ºC, VGS = 10V
600
100
80
95
500
700
t f - Nanoseconds
100
60
85
150
100
50
1
2
3
4
5
6
RG - Ohms
7
8
9
10
t d(off) - Nanoseconds
400
t d(off) - Nanoseconds
t f - Nanoseconds
450
40
75
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
900
150
65
TJ - Degrees Centigrade
110
250
70
60
500
td(off) - - - -
90
250
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
tf
100
I D = 200A
RG - Ohms
300
110
VDS = 50V
300
30
10
td(off) - - - -
RG = 1Ω, VGS = 10V
350
t f - Nanoseconds
t r - Nanoseconds
300
2
200
t d(off) - Nanoseconds
90
t d(on) - Nanoseconds
VDS = 50V
400
1
180
120
400
110
TJ = 125ºC, VGS = 10V
200
160
450
130
tr
140
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
500
120
ID - Amperes
IXFH320N10T2
IXFT320N10T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximum Transient Thermal Impedance
dfafas
0.300
Z (th)JC - ºC / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_320N10T2(98)02-01-10
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