100mA / 50V Digital transistors (with built-in resistors) DTC144EB / DTC144EM / DTC144EE / DTC144EUA / DTC144EKA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. zStructure NPN epitaxial planar silicon transistor (Resistor built-in type) zDimensions (Unit : mm) DTC144EB 0.1 0.22 0.16 (2) 0.37 Abbreviated symbol : 26 DTC144EM DTC144EE 0.7 1.6 0.55 0.3 0.2 1.2 0.32 (3) 0.8 1.2 0.8 (3) (2) 0.2 (1)(2) 0.22 0.4 0.4 0.13 (1) IN (2) GND (3) OUT 0.8 ROHM : VMT3 0.2 2.0 0.2 2.9 DTC144EKA 1.6 2.8 2.1 1.25 (1) 0.15 0.1Min. 1.3 0.8 (3) 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 1.1 0.4 0.7 (3) (2) (1) GND (2) IN (3) OUT 1.0 ROHM : EMT3 Abbreviated symbol : 26 0.9 0.3 0.15 0.5 0.5 Abbreviated symbol : 26 DTC144EUA (1) 0.2 0.5 (1) GND (2) IN (3) OUT Each lead has same dimensions (2) ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : 26 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ (1) 0.95 0.95 0.15 1.9 0.3Min. ROHM : VMN3 (1) IN (2) GND (3) OUT 0.1Min. (1) 0.17 0.35 0.6 1.6 0.1 1.0 0.8 (3) (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : 26 1/3 2009.03 - Rev.B DTC144EB / DTC144EM / DTC144EE / DTC144EUA / DTC144EKA zPackaging specifications Part No. Data Sheet zEquivalent circuit Package VMN3 VMT3 EMT3 UMT3 SMT3 Packaging type Taping Taping Taping Taping Taping Code T2L T2L TL T106 T146 Basic ordering unit (pieces) 8000 8000 3000 3000 3000 − − − − − − − − − OUT R1 IN R2 GND DTC144EB DTC144EM − DTC144EE − − DTC144EUA − − − DTC144EKA − − − OUT IN − GND − R1=R2=47kΩ zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits DTC144EB DTC144EM DTC144EE DTC144EUA DTC144EKA Unit Supply voltage VCC 50 V Input voltage VIN −10 to +40 V IO 30 IC(Max.) 100 Output current mA Power dissipation PD Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 150 mW 200 zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. VI(off) − − 0.5 VI(on) 3 − − VO(on) − 0.1 0.3 V II − − 0.18 mA VI=5V IO(off) − − 0.5 µA VCC=50V, VI=0V GI 68 − − − VO=5V, IO=5mA Input resistance R1 32.9 47 61.1 kΩ Resistance ratio R2/R1 0.8 1 1.2 − − 250 − MHz Parameter Input voltage Output voltage Input current Output current DC current gain fT ∗ Transition frequency Unit Conditions VCC=5V, IO=100µA V VO=0.3V, IO=2mA IO/II=10mA/0.5mA − − VCE=10V, IE= −5mA, f=100MHz ∗ Characteristics of built-in transistor zElectrical characteristic curves 100 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 Ta= −40°C 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ VCC=5V 2m Ta=100°C 25°C 1m −40°C 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 2/3 2009.03 - Rev.B DTC144EB / DTC144EM / DTC144EE / DTC144EUA / DTC144EKA 1k 100 lO/lI=20 500m OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 200 1 VO=5V 500 Data Sheet Ta=100°C 25°C −40°C 50 20 10 5 2 200m 100m Ta=100°C 25°C −40°C 50m 20m 10m 5m 2m 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 3/3 2009.03 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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