MITSUBISHI IGBT MODULES CM600DY-24A HIGH POWER SWITCHING USE CM600DY-24A ¡IC ................................................................... 600A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm C1 7 18 7 18 6 4-φ6.5 MOUNTING HOLES TAB #110. t=0.5 29 LABEL C2E1 E2 C1 21.2 +1.0 –0.5 8.5 18 21.5 25 E2 G2 25 G1 E1 15 80 62±0.25 3-M6 NUTS G1 E1 E2 30 (20.5) C2E1 4 6 14 E2 G2 14 110 93±0.25 14 CIRCUIT DIAGRAM Mar. 2004 CM600DY-24A Page 1 04.2.19, 9:21 PM Adobe PageMaker 6.5J/PPC MITSUBISHI IGBT MODULES CM600DY-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — (Tj = 25°C) Parameter ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG G-E Short C-E Short DC, TC = 78°C*1 Pulse Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage (Note 2) Main terminal to base plate, AC 1 min. Main terminal M6 Mounting holes M6 Typical value Unit V V A A W °C °C V N•m g (Tj = 25°C) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance (Note 2) Pulse TC = 25°C*1 VCE = VCES, VGE = 0V Min. — Limits Typ. — Max. 1 IC = 60mA, VCE = 10V 6 7 8 V — — — — — — — — — — — — — — — — — 0.52 — 2.1 2.4 — — — 2700 — — — — — 19 — — — 0.018 — 0.5 3.0 — 94 8 1.8 — 660 190 700 350 250 — 3.8 0.034 0.062 — 7.8 µA Test conditions Parameter Thermal resistance Ratings 1200 ±20 600 1200 600 1200 3670 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 VGE = VGES, VCE = 0V Tj = 25°C IC = 600A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE1 = VGE2 = 15V RG = 0.52Ω, Inductive load switching operation IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to fin, Thermal compound Applied (1/2 module)*2 Unit mA V nF nC ns ns µC V °C/W Ω *1 : Tc, Tf measured point is just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Mar. 2004 CM600DY-24A Page 2 04.2.19, 9:21 PM Adobe PageMaker 6.5J/PPC MITSUBISHI IGBT MODULES CM600DY-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25°C 15 13 1000 12 800 600 11 400 10 200 9 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 20V 2 0 4 6 8 10 VGE = 15V 3 2 1 Tj = 25°C Tj = 125°C 0 0 200 400 600 800 1000 1200 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 104 Tj = 25°C 7 5 8 6 IC = 1200A 4 IC = 600A 2 IC = 240A 0 6 8 10 12 14 16 18 3 2 103 7 5 3 2 102 7 5 3 2 101 20 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 103 7 5 3 2 7 5 Cies 102 7 5 3 2 101 7 5 3 2 Coes 100 Cres 7 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIME (ns) CAPACITANCE Cies, Coes, Cres (nF) 4 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 1200 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) td(off) td(on) tf 3 2 102 tr Conditions: VCC = 600V 3 VGE = ±15V RG = 0.52Ω 2 Tj = 125°C Inductive load 101 1 10 2 3 5 7 102 7 5 2 3 5 7 103 COLLECTOR CURRENT IC (A) Mar. 2004 CM600DY-24A Page 3 04.2.19, 9:21 PM Adobe PageMaker 6.5J/PPC MITSUBISHI IGBT MODULES CM600DY-24A REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 Irr 2 102 trr 7 5 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = ±15V RG = 0.52Ω Tj = 25°C Inductive load 2 3 5 7 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c’) (ratio) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.034°C/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.062°C/W –3 10 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 103 7 7 5 Esw(off) 3 2 2 3 5 7 102 2 3 SWITCHING LOSS (mJ/pulse) Esw(on) Conditions: VCC = 600V 5 VGE = ±15V IC = 600A Tj = 125°C 2 Inductive load C snubber at bus 3 102 7 Esw(on) Esw(off) 5 3 2 101 –1 10 5 7 103 2 3 5 7 100 2 3 5 7 101 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 102 7 7 5 Err 3 2 101 7 5 3 2 2 3 Conditions: VCC = 600V VGE = ±15V RG = 0.52Ω Tj = 125°C Inductive load C snubber at bus 5 7 102 2 3 5 7 103 EMITTER CURRENT IE (A) RECOVERY LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 7 5 3 2 SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) Conditions: VCC = 600V 5 VGE = ±15V 3 RG = 0.52Ω 2 Tj = 125°C Inductive load C snubber at bus 2 10 100 1 10 10–1 7 5 3 2 TIME (s) 7 RECOVERY LOSS (mJ/pulse) 2 10–1 EMITTER CURRENT IE (A) 103 101 1 10 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse 7 5 TC’ = 25°C 3 Under the chip 5 Err 3 2 101 Conditions: VCC = 600V VGE = ±15V IE = 600A Tj = 125°C Inductive load C snubber at bus 7 5 3 2 100 –1 10 2 3 5 7 100 2 3 5 7 101 GATE RESISTANCE RG (Ω) Mar. 2004 CM600DY-24A Page 4 04.2.19, 9:21 PM Adobe PageMaker 6.5J/PPC MITSUBISHI IGBT MODULES CM600DY-24A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 600A VCC = 400V 16 VCC = 600V 12 8 4 0 0 500 1000 1500 2000 2500 3000 3500 4000 GATE CHARGE QG (nC) Mar. 2004 CM600DY-24A Page 5 04.2.19, 9:21 PM Adobe PageMaker 6.5J/PPC