Infineon AUIRFR2307Z Advanced process technology Datasheet

AUTOMOTIVE GRADE
AUIRFR2307Z
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
HEXFET® Power MOSFET
VDSS
75V
RDS(on)
max.
16m
ID (Silicon Limited)
53A
ID (Package Limited)
42A
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
Base part number
D-Pak
S
D-Pak
AUIRFR2307Z
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Package Type
AUIRFR2307Z
G
S
Source
Orderable Part Number
AUIRFR2307Z
AUIRFR2307ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
53
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
38
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
42
210
110
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy Tested Value 
Avalanche Current 
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
RJA
Parameter
Junction-to-Case 
Junction-to-Ambient ( PCB Mount) 
Junction-to-Ambient
Units
A
W
0.70
± 20
100
140
See Fig.15,16, 12a, 12b
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300
Typ.
Max.
Units
–––
–––
–––
1.42
50
110
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-11-19
AUIRFR2307Z
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
75
––– –––
V VGS = 0V, ID = 250µA
––– 0.072 ––– V/°C Reference to 25°C, ID = 1mA
––– 12.8
16
m VGS = 10V, ID = 32A 
2.0
–––
4.0
V VDS = VGS, ID = 100µA
30
––– –––
S VDS = 25V, ID = 32A
––– –––
25
VDS = 75 V, VGS = 0V
µA
––– ––– 250
VDS = 75V,VGS = 0V,TJ =125°C
––– ––– 200
VGS = 20V
nA
––– ––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
50
14
19
16
65
44
29
75
–––
–––
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
–––
–––
–––
–––
–––
–––
2190
280
150
1070
190
400
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
42
–––
–––
210
–––
–––
–––
–––
31
31
1.3
47
47
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Output Capacitance
Coss
Effective Output Capacitance
Coss eff.
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
Reverse Recovery Time
trr
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
ID = 32A
nC VDS = 60V
VGS = 10V
VDD = 38V
ID = 32A
ns
RG = 10
VGS = 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
pF
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 60V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V 
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 32A,VGS = 0V 
ns TJ = 25°C ,IF = 32A, VDD = 38V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
 Limited by TJmax , starting TJ = 25°C, L = 0.197mH, RG = 25, IAS = 32A, VGS =10V. Part not recommended for use above this value.
 Pulse width 1.0ms; duty cycle  2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. starting TJ = 25°C, L = 0.197mH, RG = 25, IAS = 32A, VGS =10V.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C
2
2015-11-19
AUIRFR2307Z
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
1
4.5V
100
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
Tj = 175°C
1
10
0.1
100
10
80
Gfs , Forward Transconductance (S)
1000
100
TJ = 175°C
10
TJ = 25°C
1
TJ = 25°C
60
TJ = 175°C
40
20
VDS = 10V
VDS = 20V
380µs PULSE WIDTH
60µs PULSE WIDTH
0.1
2
4
6
8
0
10
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
100
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
ID, Drain-to-Source Current)
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
0
10
20
30
40
50
60
70
ID,Drain-to-Source Current (A)
Fig. 4 Typical Forward Trans conductance
Vs. Drain Current
2015-11-19
AUIRFR2307Z
4000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
3000
C, Capacitance(pF)
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Ciss
2000
1000
Coss
ID= 32A
VDS = 60V
16
VDS= 38V
VDS= 15V
12
8
4
Crss
0
0
1
10
0
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100.00
TJ = 175°C
10.00
1.00
TJ = 25°C
VGS = 0V
0.10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
40
60
80
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
4
20
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1.6
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100µsec
10
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
2015-11-19
AUIRFR2307Z
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
60
LIMITED BY PACKAGE
ID , Drain Current (A)
50
40
30
20
10
0
ID = 32A
VGS = 10V
2.0
1.5
1.0
0.5
25
50
75
100
125
150
-60 -40 -20
175
0
20 40 60 80 100 120 140 160 180
TC , Case Temperature (°C)
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
J
0.05
0.02
0.01
R1
R1
J
1
R2
R2
C
1
2
2
Ci= iRi
Ci= iRi
C
Ri (°C/W)
i (sec)
0.7938
0.000499
0.6257
0.005682
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-11-19
AUIRFR2307Z
15V
+
V
- DD
IAS
20V
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
EAS, Single Pulse Avalanche Energy (mJ)
D.U.T
RG
500
DRIVER
L
VDS
ID
3.4A
4.6A
BOTTOM 32A
TOP
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
VGS(th) Gate threshold Voltage (V)
5.0
ID = 1.0A
ID = 1.0mA
ID = 250µA
4.5
ID = 100µA
4.0
3.5
3.0
2.5
2.0
1.5
Fig 13a. Gate Charge Waveform
1.0
-75 -50 -25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
2015-11-19
AUIRFR2307Z
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
10
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 15, 16:
EAR , Avalanche Energy (mJ)
120
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 32A
100
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
80
60
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
40
20
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
Fig 16. Maximum Avalanche Energy
Vs. Temperature
7
EAS (AR) = PD (ave)·tav
2015-11-19
AUIRFR2307Z
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a. Switching Time Test Circuit
8
Fig 18b. Switching Time Waveforms
2015-11-19
AUIRFR2307Z
D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches))
D-Pak (TO-252AA) Part Marking Information
Part Number
AUFR2307Z
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
2015-11-19
AUIRFR2307Z
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
2015-11-19
AUIRFR2307Z
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
D-Pak
MSL1
Class M4 (+/- 425V)†
AEC-Q101-002
Class H1B (+/- 1000V)†
AEC-Q101-001
Class C5 (+/- 1125V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
11/19/2015
Comments


Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
11
2015-11-19