AUIRF7648M2TR
AUTOMOTIVE GRADE
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg (typical)
D
SC
M2
S
S
S
S
G
D
DirectFET® ISOMETRIC
M4
Applicable DirectFET® Outline and Substrate Outline
SB
60V
5.5m
7.0m
68A
35nC
M4
L4
L6
L8
Description
The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve
low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package
allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7648M2 to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for
high current automotive applications.
Base Part Number
AUIRF7648M2
Package Type
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
AUIRF7648M2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (Tested)
IAR
EAR
TP
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
60
±20
68
48
14
179
272
63
2.5
70
291
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRF7648M2TR
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Ambient
RJA
Junction-to-Can
RJ-Can
Junction-to-PCB Mounted
RJ-PCB
Linear Derating Factor
Typ.
–––
12.5
20
–––
1.0
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
––– 0.07 ––– V/°C
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
5.5
7.0
Static Drain-to-Source On-Resistance
RDS(on)
m
VGS(th)
Gate Threshold Voltage
3.0
4.0
4.9
V
Gate Threshold Voltage Coefficient
–––
-12
––– mV/°C
VGS(th)/TJ
gfs
Forward Transconductance
44
–––
–––
S
RG
Internal Gate Resistance
–––
1.4
–––
–––
–––
5.0
Drain-to-Source Leakage Current
µA
IDSS
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
35
53
Qgs1
Gate-to-Source Charge
–––
7.7
–––
Qgs2
Gate-to-Source Charge
–––
3.4
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
14
–––
Qgodr
Gate Charge Overdrive
–––
9.9
–––
Qsw
Switch Charge (Qgs2 + Qgd)
––– 17.4 –––
Qoss
Output Charge
–––
23
–––
nC
td(on)
Turn-On Delay Time
–––
12
–––
tr
Rise Time
–––
23
–––
ns
td(off)
Turn-Off Delay Time
–––
19
–––
tf
Fall Time
–––
14
–––
Ciss
Input Capacitance
––– 2170 –––
Coss
Output Capacitance
–––
633
–––
Crss
Reverse Transfer Capacitance
–––
162
–––
pF
Coss
Output Capacitance
––– 2661 –––
Coss
Output Capacitance
–––
465
–––
Coss eff.
Effective Output Capacitance
–––
726
–––
Max.
60
–––
–––
2.4
–––
0.42
Units
°C/W
W/°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 41A
VDS = VGS, ID = 150µA
VDS = 25V, ID = 41A
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Conditions
VDS = 30V
VGS = 10V
ID = 41A
See Fig. 11
VDS = 16V, VGS = 0V
VDD = 30V
ID = 41A
RG = 6.8
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz
VGS = 0V, VDS = 48V, ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 48V
Notes through are on page 3
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AUIRF7648M2TR
Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
Diode Forward Voltage
VSD
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Surface mounted on 1 in.
square Cu board (still air).
Min.
Typ.
Max. Units
–––
–––
68
–––
–––
272
–––
–––
–––
–––
36
46
1.3
54
69
D
A
Mounted to a PCB with
small clip heatsink (still air)
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 41A, VGS = 0V
TJ = 25°C, IF = 41A, VDD = 25V
dv/dt = 100A/µs
G
S
V
ns
nC
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.084mH, RG = 50, IAS = 41A, VGS = 20V.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R is measured at TJ of approximately 90°C.
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2015-9-30
AUIRF7648M2TR
1000
1000
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
1
5.5V
100
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.5V
10
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.1
0.1
1
1
10
0.1
100
ID = 41A
12
10
T J = 125°C
6
4
T J = 25°C
2
4
6
8
10
12
14
16
18
20
T J = 125°C
10.0
8.0
6.0
T J = 25°C
4.0
Vgs = 10V
2.0
0
50
100
150
200
ID , Drain Current (A)
Fig. 3 Typical On-Resistance vs. Gate Voltage
Fig. 4 Typical On-Resistance vs. Drain Current
1000
2.2
VDS = 25V
60µs PULSE WIDTH
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
12.0
VGS, Gate -to -Source Voltage (V)
100
T J = -40°C
TJ = 25°C
TJ = 175°C
10
1.0
3
4
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
Fig 5. Transfer Characteristics
4
10
Fig. 2 Typical Output Characteristics
14
RDS(on), Drain-to -Source On Resistance ( m)
RDS(on), Drain-to -Source On Resistance (m )
Fig. 1 Typical Output Characteristics
8
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
10
2.0
ID = 41A
VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
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AUIRF7648M2TR
5.5
ISD, Reverse Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
1000
4.5
3.5
ID = 1.0A
ID = 1.0mA
ID = 250µA
ID = 150µA
2.5
T J = -40°C
100
TJ = 25°C
TJ = 175°C
10
VGS = 0V
1.0
1.5
-75 -50 -25
0
0.2
25 50 75 100 125 150 175
T J , Temperature ( °C )
100000
120
T J = 25°C
80
1.2
60
T J = 175°C
40
10000
Ciss
C oss
1000
V DS = 6V
C rss
100
0
0
20
40
60
80
100
1
120
10
100
VDS , Drain-to-Source Voltage (V)
ID ,Drain-to-Source Current (A)
Fig 9. Typical Forward Trans conductance vs. Drain Current
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
75
14
ID = 41A
12
VDS = 48V
VDS = 30V
60
VDS= 12V
10
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
1.0
Coss = Cds + Cgd
380µs PULSE WIDTH
8
6
4
45
30
15
2
0
0
0
10
20
30
40
QG, Total Gate Charge (nC)
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
5
0.8
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
100
C, Capacitance (pF)
Gfs, Forward Transconductance (S)
0.6
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
20
0.4
VSD , Source-to-Drain Voltage (V)
50
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
2015-9-30
AUIRF7648M2TR
300
OPERATION IN THIS AREA
LIMITED BY RDS(on)
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
1000
100
100µsec
10
1msec
10msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
250
200
150
100
50
0
0.1
0.10
ID
TOP
8.5A
18A
BOTTOM 41A
1
10
25
100
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. Maximum Safe Operating Area
Thermal Response ( Z thJC ) °C/W
10
D = 0.50
1
0.20
0.10
0.02
0.01
0.05
0.1
J
R1
R1
J
1
R2
R2
R3
R3
C
2
1
2
3
3
Ci= iRi
Ci= iRi
0.01
1E-005
4
4
C
Ri (°C/W)
0.07641
i (sec)
0.000021
0.36635
0.000737
0.94890
0.039150
1.00767
0.007321
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
R4
R4
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs. Pulse Width
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AUIRF7648M2TR
80
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 41A
EAR , Avalanche Energy (mJ)
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 15)
Starting T J , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy vs. Temperature
Fig 18a. Unclamped Inductive Test Circuit
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 18b. Unclamped Inductive Waveforms
VDD
Fig 19a. Gate Charge Test Circuit
Fig 20a. Switching Time Test Circuit
7
Fig 19b. Gate Charge Waveform
Fig 20b. Switching Time Waveforms
2015-9-30
AUIRF7648M2TR
DirectFET® Board Footprint, M4 (Medium Size Can).
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® .
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
S
S
S
S
G
D
8
D
2015-9-30
AUIRF7648M2TR
DirectFET® Outline Dimension, M4 Outline (Medium Size Can).
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® . This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
K
L
L1
M
P
R
METRIC
MIN MAX
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.58 0.62
0.78 0.82
0.78 0.82
0.78 0.82
0.38 0.42
1.10 1.20
2.30 2.40
3.50 3.60
0.68 0.74
0.09 0.17
0.02 0.08
IMPERIAL
MIN
MAX
0.246
0.250
0.189
0.201
0.152
0.156
0.014
0.018
0.023
0.024
0.031
0.032
0.031
0.032
0.031
0.032
0.015
0.017
0.043
0.047
0.090
0.094
0.138
0.142
0.027
0.029
0.003
0.007
0.001
0.003
DirectFET® Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
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2015-9-30
AUIRF7648M2TR
DirectFET® Tape & Reel Dimension (Showing component orientation)
F
LOADED TAPE FEED DIRECTION
H
G
F
C
D
E
A
B
A
C
B
D
E
G
H
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts, ordered as AUIRF7648M2TR.
NOTE: CONTROLLING
DIMENSIONS IN MM
10
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
0.311
0.319
7.90
8.10
0.154
0.161
3.90
4.10
0.469
0.484
11.90
12.30
0.215
0.219
5.45
5.55
0.201
0.209
5.10
5.30
0.256
0.264
6.50
6.70
0.059
N.C
1.50
N.C
0.059
1.50
0.063
1.60
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
IMPERIAL
METRIC
MIN
CODE
MAX
MIN
MAX
12.992
A
N.C
330.0
N.C
0.795
B
20.2
N.C
N.C
0.504
C
12.8
0.520
13.2
0.059
D
1.5
N.C
N.C
3.937
E
100.0
N.C
N.C
F
N.C
N.C
0.724
18.4
G
0.488
12.4
0.567
14.4
H
0.469
11.9
0.606
15.4
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AUIRF7648M2TR
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
DFET2 Medium Can
MSL1
Class M4 (+/- 400V)†
AEC-Q101-002
Class H2 (+/- 4000V)†
AEC-Q101-001
N/A
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
9/30/2015
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Updated Tape and Reel option on page 10
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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