MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR2AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR2AM OUTLINE DRAWING Dimensions in mm 10 MAX 0.5 3.2±0.2 23.7±0.5 4 ∗ 8 MAX φ3.2±0.1 TYPE NAME @ VOLTAGE CLASS 4 MAX 12 MIN 1.2±0.1 0.8 0.8 4.5 MAX 2.5 2.5 1.55±0.1 123 • IT (AV) ........................................................................... 2A • VDRM ..............................................................400V/600V • IGT ......................................................................... 100µA 0.5 1.5 MIN ∗ 10 MAX Measurement point of case temperature 24 3 1 1 2 3 4 CATHODE ANODE GATE ANODE TO-202 APPLICATION Control of household equipment such as electric blandets, leakage protector, static switch, other general purpose control applications, ignitors MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VRRM Repetitive peak reverse voltage 400 600 V VRSM Non-repetitive peak reverse voltage 500 720 V VR (DC) DC reverse voltage 320 480 V VDRM Repetitive peak off-state voltage ✽1 400 600 V VD (DC) DC off-state voltage ✽1 320 480 V Ratings Unit 3.15 A 2.0 A 20 A 1.6 A2s Peak gate power dissipation 0.5 W Average gate power dissipation 0.1 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 6 V IFGM Peak gate forward current 0.3 Tj Junction temperature Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Tc =75°C ITSM Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t I2t Value corresponding to 1 cycle of half wave 60Hz, Surge on-state current PGM PG (AV) VFGM for fusing Storage temperature Tstg — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 1.6 g ✽1. With Gate-to-cathode resistance RGK =1kΩ Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR2AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, V RRM applied — — 0.1 mA IDRM Repetitive peak off-state current Tj=125°C, V DRM applied, RGK=1kΩ — — 0.1 mA VTM On-state voltage Tc=25°C, ITM =4A, Instantaneous value — — 1.8 V VGT Gate trigger voltage Tj=25°C, VD =6V, IT=0.1A — — 0.8 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM, RGK=1kΩ 0.2 — — IGT Gate trigger current Tj=25°C, VD=6V, IT=0.1A 1 — R th (j-c) Thermal resistance Junction to case ✽2 — — 100 ✽3 10 V µA °C/W ✽2. The method point for case temperature is at the anode tab 1.5mm away from the molded case. ✽3. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item A B C IGT (µA) 1 ~ 30 20 ~ 50 40 ~ 100 The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode. MAXIMUM ON-STATE CHARACTERISTICS 101 7 Tc = 25°C 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 20 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 18 16 14 12 10 8 6 4 2 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR2AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 102 GATE VOLTAGE (V) 7 5 3 2 VFGM = 6V 101 7 5 3 2 PGM = 0.5W PG(AV) = 0.1W VGT = 0.8V 100 7 5 3 2 IGT = 100µA (Tj = 25°C) 10–1 7 5 3 2 VGD = 0.15V IFGM = 0.3A 10–2 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 100 (%) GATE CHARACTERISTICS 103 7 5 3 2 TYPICAL EXAMPLE 102 7 5 3 2 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE TRIGGER VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 0 –40 –20 0 20 40 60 80 100 120 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 3 2 JUNCTION TO AMBIENT 102 7 5 3 2 101 7 5 3 2 JUNCTION TO CASE 100 7 5 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 5.0 180° 4.5 90° 120° 60° 4.0 θ = 30° 3.5 3.0 2.5 2.0 1.5 θ 1.0 360° 0.5 0 0 RESISTIVE, INDUCTIVE LOADS 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) JUNCTION TEMPERATURE (°C) 140 θ 120 360° RESISTIVE, INDUCTIVE LOADS 100 80 60 40 θ = 30° 20 0 60° 0 90° 120° 180° 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR2AM LOW POWER USE ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 WITHOUT FIN 140 NATURAL θ CONVECTION 360° 120 RESISTIVE, 100 INDUCTIVE LOADS 80 θ = 30° 60° 60 90° 120° 40 180° 20 0 0 AMBIENT TEMPERATURE (°C) AMBIENT TEMPERATURE (°C) NON-INSULATED TYPE, GLASS PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 ALL FINS ARE 140 BLACK PAINTED θ IRON AND GREASED 80 60 40 20 θ = 30° 0 90° 180° 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 4.5 140 θ 120 360° 100 RESISTIVE LOADS θ = 30° 60° 90° 120° 4.0 180° 3.5 3.0 2.5 2.0 1.5 θ 1.0 360° 0.5 0 θ 0 CASE TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 5.0 RESISTIVE LOADS 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 θ 80 60 40 θ = 30° 60° 90° 120° 180° 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 WITHOUT FIN 140 θ θ ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 ALL FINS ARE 140 BLACK PAINTED θ θ IRON AND GREASED 50 50 t1.2 360° 120 RESISTIVE LOADS 100 NATURAL CONVECTION 80 360° RESISTIVE θ = 30° LOADS 60° NATURAL 90° CONVECTION 120° 180° 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 360° 50 50 t1.2 120 60 40 20 0 θ = 30° 0 90° 180° 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR2AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE TYPICAL EXAMPLE RGK = 1kΩ 140 100 (%) 160 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 Tj = 125°C RGK = 1kΩ 80 #2 60 40 #1 20 80 60 40 20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 120 TYPICAL EXAMPLE IGT (25°C) 100 # 1 19µA # 2 66µA 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 101 7 DISTRIBUTION 5 TYPICAL EXAMPLE 3 IGT (25°C) = 35µA 2 100 7 5 3 2 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 10–1 7 5 3 VD = 12V 2 RGK = 1kΩ 10–2 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 500 Tj = 25°C TYPICAL EXAMPLE IGT (25°C) IH (1kΩ) # 1 25µA 0.9mA # 2 48µA 1.3mA 400 300 200 #1 #2 100 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) 100 (%) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) 100 (%) BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 100 (%) TYPICAL EXAMPLE Tj = 125°C GATE TO CATHODE RESISTANCE (kΩ) JUNCTION TEMPERATURE (°C) HOLDING CURRENT (RGK = rkΩ) HOLDING CURRENT (RGK = 1kΩ) 120 100 BREAKOVER VOLTAGE (RGK = rkΩ) BREAKOVER VOLTAGE (RGK = 1kΩ) BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR2AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE IGT (DC) 5 4 # 1 19µA 3 # 2 66µA 2 103 7 5 4 3 2 Tj = 25°C #1 #2 102 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) Feb.1999