MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR5AS OUTLINE DRAWING Dimensions in mm 6.5 ∗ 2.3 MIN 1.0 MAX 0.9 MAX 5.5±0.2 TYPE NAME 1.0 2.3 10 MAX 4 VOLTAGE CLASS 0.5±0.1 1.5±0.2 5.0±0.2 0.5±0.2 2.3 0.8 2.3 ∗ Measurement point of case temperature 1 2 3 24 1 2 3 4 3 • IT (AV) ........................................................................... 5A • VDRM ..............................................................400V/600V • IGT ......................................................................... 200µA 1 CATHODE ANODE GATE ANODE MP-3 APPLICATION Switching mode power supply, regulator for autocycle, such as TV. VCR. PRINTER, ignitors for autocycle, electric tools, other general purpose control applications, strobe flasher MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VRRM Repetitive peak reverse voltage 400 600 V VRSM Non-repetitive peak reverse voltage 500 720 V VR (DC) DC reverse voltage 320 480 V VDRM Repetitive peak off-state voltage ✽1 400 600 V VD (DC) DC off-state voltage ✽1 320 480 V Symbol Conditions Parameter Ratings Unit 7.8 A 5 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive 90 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 33 A2s Peak gate power dissipation 0.5 W Average gate power dissipation 0.1 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 6 V IFGM Peak gate forward current 0.3 Tj Junction temperature IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Tc =88°C ITSM Surge on-state current I2t I2t PGM PG (AV) VFGM for fusing Storage temperature Tstg — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 0.26 g ✽1. With Gate-to-cathode resistance RGK =220Ω Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied, RGK=220Ω — — 2.0 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied, RGK=220Ω — — 2.0 mA VTM On-state voltage Tc=25°C, ITM =15A, instantaneous value — — 1.8 V VGT Gate trigger voltage Tj=25°C, VD=6V, IT=0.1A — — 0.8 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM, RGK=220Ω 0.1 — — IGT Gate trigger current Tj=25°C, VD=6V, IT=0.1A 1 — IH Holding current Tj=25°C, VD=12V, RGK=220Ω — 3.5 — mA R th (j-c) Thermal resistance Junction to case ✽2 — — 3.0 °C/W 200 ✽3 V µA ✽2. The method point for case temperature is at anode tab. ✽3. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BD) Item A B C D IGT (µA) 1 ~ 30 20 ~ 50 40 ~ 100 80 ~ 200 The above values do not include the current flowing through the 220Ω resistance between the gate and cathode. MAXIMUM ON-STATE CHARACTERISTICS 102 7 Tc = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 100 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE GATE VOLTAGE (V) 102 7 5 3 2 VFGM = 6V 101 7 5 3 2 PGM = 0.5W PG(AV) = 0.1W VGT = 0.8V 100 7 5 3 2 IGT = 200µA (Tj = 25°C) IFGM = 0.3A 10–1 VGD = 0.1V 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 7 5 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 100 (%) GATE CHARACTERISTICS 103 7 5 3 2 102 7 5 3 2 101 7 5 3 VD = 6V 2 RL = 60Ω 100 –60 –40 –20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE TRIGGER VOLTAGE (V) Tj = 25°C 0.9 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION 0.8 0.7 TYPICAL EXAMPLE 0.6 0.5 0.4 0.3 0.2 0.1 0 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 TYPICAL EXAMPLE IGT (25°C) #2 # 1 @11µA # 2 @61µA #1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 JUNCTION TO AMBIENT 102 7 5 3 2 101 7 5 3 2 JUNCTION TO CASE 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 16 180° 14 120° 90° 12 60° 10 8 6 θ = 30° 4 θ 2 360° 0 0 1 RESISTIVE, INDUCTIVE LOADS 2 3 4 5 6 7 8 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) JUNCTION TEMPERATURE (°C) 140 θ 120 360° RESISTIVE, INDUCTIVE LOADS 100 80 60 40 θ = 30° 20 0 60° 0 1 2 3 90° 180° 120° 4 5 6 7 8 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 140 θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION WITHOUT FIN 120 100 80 60 θ = 30° 40 60° 90° 120° 20 180° 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 AMBIENT TEMPERATURE (°C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 θ 120 360° 80 60 θ = 30° 60° 90° 20 120° 180° 0 0 1 2 40 θ 360° θ CASE TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 16 12 180° RESISTIVE θ = 30° 60° 90° 10 LOADS 120° 8 6 4 2 0 0 1 2 3 4 5 6 7 3 4 5 6 7 8 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 RESISTIVE LOADS 140 θ θ 360° 120 100 80 60 40 θ = 30° 20 0 8 0 1 2 60° 90° 120° 180° 3 4 5 6 7 8 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 WITHOUT FIN 140 θ θ ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 ALUMINUM BOARD 140 80 80 t2.3 θ θ 360° 120 RESISTIVE LOADS NATURAL CONVECTION 100 80 60 θ = 30° 60° 40 90° 120° 20 180° 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) AMBIENT TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) 14 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION ALUMINUM BOARD 80 80 t2.3 100 360° RESISTIVE θ = 30° LOADS 60° NATURAL 90° CONVECTION 120° 180° 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE TYPICAL EXAMPLE RGK = 220Ω 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 100 (%) 160 BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE BREAKOVER VOLTAGE (RGK = rΩ) BREAKOVER VOLTAGE (RGK = 220Ω) BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 80 60 40 20 HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) 100 2 3 5 710-1 2 3 5 7100 2 3 5 7 101 GATE TO CATHODE RESISTANCE (Ω) 101 7 5 4 DISTRIBUTION 3 2 TYPICAL EXAMPLE IGT (25°C)= 35µA 100 7 5 4 3 2 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, VD = 12V RGK = 220Ω –1 10 –60 –40 –20 0 20 40 60 80 100 120 140 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 400 350 300 TYPICAL EXAMPLE IGT (25°C) IH (1K) # 1 14µA 1.7mA # 2 48µA 2.7mA Tj = 25°C 250 200 #1 #2 150 100 50 0 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 GATE TO CATHODE RESISTANCE (kΩ) 100 (%) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) HOLDING CURRENT (RGK = rΩ) HOLDING CURRENT (RGK = 220Ω) 100 (%) BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 100 (%) JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C 140 RGK = 220Ω 120 Tj = 125°C 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 5 3 2 #1 TYPICAL EXAMPLE IGT (DC) #1 11µA #2 61µA #2 103 7 5 3 2 102 7 5 3 VD = 6V 2 RL = 60Ω Ta = 25°C 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) Feb.1999