Kexin BA682 Band-switching diode Datasheet

Diodes
SMD Type
Band-switching diodes
BA682; BA683
LL-34
Unit: mm
Features
1.50
1.30
2.64REF
Continuous reverse voltage:max. 35 V
0.50
0.35
Continuous forward current:max. 100 mA
Low diode capacitance:max. 1.5 pF
Low diode forward resistance:max. 0.7 to 1.2
3.60
3.30
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous reverse voltage
VR
Continuous forward current
IF
Storage temperature
Conditions
single diode loaded
-65
Tstg
Junction temperature
Min
Max
Unit
35
V
100
mA
+150
Tj
150
Thermal resistance from junction to tie-point
Rth j-t p
300
K/W
Thermal resistance from junction to ambient
Rth j-a
600
K/W
Electrical C haracteristics Ta = 25
P aram eter
S ym bol
C onditions
M ax
U nit
Forw ard voltage
VF
I F = 100 m A
1.0
V
R everse current
IR
V R = 20 V
50
nA
D iode capacitance
Cd
f = 1 M H z; V R = 1 V
Cd
f = 1 M H z; V R = 3 V
V R = 20 V ; T j = 75
D iode capacitance
B A 682
B A 683
D iode forw ard resistance
B A 682
D iode forw ard resistance
B A 683
1.25
A
pF
pF
1.20
rD
I F = 3 m A ; f = 200 M H z;
B A 683
B A 682
1
1.5
0.7
1.2
rD
I F = 10 m A ; f = 200 M H z;
0.5
0.9
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