MITSUBISHI SOFT RECOVERY DIODES FD1500BV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm 10.5 ± 1 FD1500BV-90DA 6.35 × 10.8 φ85 ± 0.2 TYPE NAME 26 ± 0.5 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN ¡IF(AV) Average forward current ..................... 1500A ¡VRRM Repetitive peak reverse voltage ................... 4500V ¡QRR Reverse recovery charge ................. 3600µC ¡Press pack type 12 ± 2 φ85 ± 0.2 φ120MAX φ3.5 ± 0.2 2.2 ± 0.2DEPTH APPLICATION Free wheel diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VLTDS Symbol IF(RMS) IF(AV) IFSM I2t di/dt Tj T stg — — Parameter Voltage class Unit Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Long term DC stability voltage at 100FIT 4500 4500 3600 3000 V V V V Parameter RMS forward current Average forward current Surge forward current Current-squared, time integration Critical rate of rise of reverse recovery current Junction temperature Storage temperature Mounting force required Weight Conditions Applied for all conduction angles f = 60Hz, sine wave θ = 180°, Tf = 65°C One half cycle at 60Hz, Tj=125°C IFM = 1500A, VR ≤ 2250V, Tj = 125°C, With clamp circuit (Refer to Fig. 1 and Fig. 2) (Recommended value 47kN) Typical 1220g Ratings 2350 1500 30 3.7 × 106 Unit A A kA A2s 2000 A/µs –20 ~ 125 –40 ~ 150 39 ~ 55 — °C °C kN g Feb.1999 MITSUBISHI SOFT RECOVERY DIODES FD1500BV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol I RRM VFM QRR Erec tb/ta Rth(j-f) Parameter Limits Test conditions Repetitive peak reverse current Forward voltage Reverse recovery charge Reverse recovery loss Soft recovery rate Thermal resistance Min. — — — — — — VRM = 4500V, Tj = 125°C IFM = 3400A, T j = 125°C IFM = 1500A, d i/d t = 1000A/µs, VR = 2250V, Tj = 125°C With clamp circuit (Refer to Fig. 1 and Fig. 2) Junction to fin Fig. 1 (Definition of reverse recovery waveform) Typ. — — — 8.0 2 — Max. 150 3.5 3600 — — 0.11 Unit mA V µC J/P — °C/W Fig. 2 (Reverse recovery test circuit) QRR = (trr × IRM)/2 di/dt(0~50%IFM) 50%IFM Rc Di : FD1500BV-90DA Cc : 6µF Rc = 2Ω Lc = 0.3µH CDi trr ta Cc Di L(load) IFM Lc tb 0 CDi GCT IRM Rc Cc 50%IRM 90%IRM Feb.1999 MITSUBISHI SOFT RECOVERY DIODES FD1500BV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE MAXIMUM FORWARD CHARACTERISTICS 104 7 5 3 2 Tj = 125°C Tj = 25°C 103 7 5 3 2 102 7 5 3 2 101 0 1 2 3 4 5 6 7 8 Erec VS IF (TYP.) REVERSE RECOVERY LOSS Erec (J/P) FORWARD CURRENT (A) PERFORMANCE CURVES 20 14 With clamp circuit 12 10 8 6 4 2 0 7000 With clamp circuit 6000 5000 4000 3000 2000 1000 0 0 500 1000 1500 2000 2500 3000 FORWARD CURRENT IF (A) 1000 1500 2000 2500 3000 100 2 3 5 7 101 0.018 THERMAL IMPEDANCE (°C/ W) REVERSE RECOVERY CHARGE QRR (µC) VR = 2250V, Tj =125°C 500 MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) CONDITION 8000 di/dt = 1000A/µs 0 FORWARD CURRENT IF (A) QRR VS IF (TYP.) 9000 VR = 2250V, Tj =125°C 16 di/dt = 1000A/µs FORWARD VOLTAGE (V) 10000 CONDITION 18 0.016 0.014 0.012 0.01 0.008 0.006 0.004 0.002 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (S) Feb.1999