MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000CV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING FGR3000CV-90DA Dimensions in mm GATE (WHITE) 500 ± 8 AUXILIARY CATHODE CONNECTOR (RED) 26 ± 0.5 ● ITQRM Repetitive controllable on-state current ...........3000A ● IT(AV) Average on-state current .......................900A ● VDRM Repetitive peak off state voltage ...................4500V ● Reverse conducting type 0.4 MIN 0.4 MIN φ 85 ± 0.2 φ 3.5 DEPTH 2.2 ± 0.2 CATHODE TYPE NAME φ 85 ± 0.2 φ 120 MAX ANODE φ 3.5 DEPTH 2.2 ± 0.2 APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Symbol VDRM VDSM VD(DC) Voltage class 90DA 4500 4500 2500 Parameter voltage+ Repetitive peak off-state Non-repetitive peak off-state voltage+ DC off-state voltage+ Unit V V V + : VGK = –2V Symbol ITQRM IT(RMS) IT(AV) ITSM IT2t IR(RMS) IR(AV) IRSM IR2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing RMS Reverse current Average reverse current Surge (non-repetitive) reverse current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Conditions VDM = 3375V, Tj = 125°C, CS = 3.5µF, LS = 0.2µH f = 60Hz, sine wave θ = 180°, Tf = 70°C One half cycle at 60Hz One cycle at 60Hz f = 60Hz, sine wave θ = 180°, Tf = 70°C One half cycle at 60Hz One cycle at 60Hz VD = 2250V, IGM = 40A, Tj = 125°C Recommended value 37 Standard value Ratings 3000 1410 900 18 1.3 × 106 1100 700 22 2.0 × 106 500 10 18 100 900 400 27 100 230 –40 ~ +125 –40 ~ +150 31 ~ 43 1450 Unit A A A kA A2s A A kA A2s A/µs V V A A W kW W W °C °C kN g Aug.1998 MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000CV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Test conditions VTM VRM IDRM IRG dv/dt tgt On-state voltage Peak reverse voltage drop Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Tj = 125°C, ITM = 3000A, Instantaneous measurment Tj = 125°C, IRM = 3000A, Instantaneous measurment Tj = 125°C, VDRM Applied, VGK = –2V Tj = 125°C, VRG = 17V Tj = 125°C, VD = 2250V, VGK = –2V Tj = 125°C, ITM = 3000A, IGM = 40A, VD = 2250V tgq Turn-off time IGQM VGT IGT Peak gate turn-off current Gate trigger voltage Gate trigger current Tj = 125°C, ITM = 3000A, VDM = 3375V, diGQ/dt = –40A/µs VRG = 17V, CS = 3.5µF, LS = 0.2µH Rth(j-f) Thermal resistance DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C GTO Side (Junction to fin) Diode Side (Junction to fin) Min — — — — 1000 — Limits Typ — — — — — — — — — — — — 750 — — — Max 4.0 4.0 200 250 — 10 Unit V V mA mA V/µs µs 30 µs — 1.5 3000 0.016 0.025 A V mA °C/W PERFORMANCE CURVES MAXIMUM ON-STATE AND MAXIMUM REVERSE CHARACTERISTICS 25 Tj = 125°C 103 7 5 3 2 ON-STATE CHARACTERISTIC (GTO PART) 102 7 5 3 2 101 SURGE CURRENT (kA) CURRENT (A) 104 7 5 3 2 RATED ON-STATE AND REVERSE SURGE CURRENT REVERSE CHARACTERISTIC (DIODE PART) 0 1 2 3 4 5 6 7 20 10 GTO PART 5 0 0 10 8 VOLTAGE (V) 100 7 5 3 2 PFGM = 400W PFG(AV) = 100W VGT = 1.5V Tj = 25°C IGT = 3000mA IFGM = 100A 10–1 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 GATE CURRENT (mA) 5 7 101 2 3 5 7 102 MAXIMUM THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO FIN) 100 2 3 5 7 101 0.040 THERMAL IMPEDANCE (°C/ W) GATE VOLTAGE (V) 101 7 5 3 2 VFGM = 10V 2 3 CONDUCTION TIME (CYCLES AT 60Hz) GATE CHARACTERISTICS 102 7 5 3 2 DIODE PART 15 0.035 0.030 DIODE PART 0.025 0.020 GTO PART 0.015 DIODE PART 0.010 0.005 GTO PART 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (S) Aug.1998 MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000CV-90DA MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (GTO PART, SINGLE-PHASE HALF WAVE) 5000 120 θ 4000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (GTO PART, SINGLE-PHASE HALF WAVE) 130 360° RESISTIVE, 3000 INDUCTIVE LOAD 180° 120° 90° 60° θ = 30° 2000 1000 FIN TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) HIGH POWER INVERTER USE PRESS PACK TYPE 90 80 70 θ = 30° 60° 90° 120° 180° 60 0 0 200 400 800 600 50 1000 MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (GTO PART, RECTANGULAR WAVE) 5000 270° 180° 120° 90° 3000 60° θ = 30° 2000 θ 360° RESISTIVE, INDUCTIVE LOAD 1000 0 0 300 600 900 1200 360° RESISTIVE, INDUCTIVE LOAD 100 90 80 70 50 θ = 30° 0 60° 90° 180° 120° 270° 300 600 900 DC 1200 1500 AVERAGE ON-STATE CURRENT (A) MAXIMUM REVERSE POWER DISSIPATION CHARACTERISTIC (DIODE PART, SINGLE PHASE WAVE) 3000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE REVERSE CURRENT (DIODE PART, SINGLE PHASE HALF WAVE) 130 RESISTIVE, INDUCTIVE LOAD 180° CONDUCTION RESISTIVE, INDUCTIVE LOAD 180° CONDUCTION 120 FIN TEMPERATURE (°C) 600 1000 800 θ 110 AVERAGE ON-STATE CURRENT (A) 1200 600 120 1500 1800 400 130 60 2400 200 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (GTO PART, RECTANGULAR WAVE) DC 4000 0 AVERAGE ON-STATE CURRENT (A) FIN TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) 360° RESISTIVE, INDUCTIVE LOAD 100 AVERAGE ON-STATE CURRENT (A) REVERSE POWER DISSIPATION (W) θ 110 110 100 90 80 70 60 0 0 200 400 600 800 1000 AVERAGE REVERSE CURRENT (A) 50 0 250 500 750 1000 AVERAGE REVERSE CURRENT (A) Aug.1998 MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000CV-90DA GATE TRIGGER CURRENT (mA) 8000 VD = 5~20V IT = 25~200A HALF SINE WAVE 7000 6000 5000 4000 3000 2000 1000 0 –60 –20 20 60 100 140 TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) JUNCTION TEMPERATURE (°C) TURN OFF TIME, TURN OFF STORAGE TIME VS. TURN OFF GATE CURRENT (TYPICAL) 40 VD = 2250V 35 VDM = 3375V diGQ/dt = –40A/µs 30 VRG = 17V CS = 3.5µF LS = 0.2µH 25 Tj = 125°C tgq 20 ts 15 10 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 TURN OFF CURRENT (A) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) TURN ON TIME tgt, TURN ON DELAY TIME td (µs) HIGH POWER INVERTER USE PRESS PACK TYPE TURN ON TIME, TURN ON DELAY TIME VS. TURN ON GATE CURRENT (TYPICAL) 8.0 6.0 5.0 4.0 tgt 3.0 td 2.0 1.0 0 TURN OFF TIME, TURN OFF STORAGE TIME VS. RATE OF RISE OF TURN OFF GATE CURRENT (TYPICAL) 50 40 30 TURN OFF GATE CURRENT (A) TURN OFF GATE CURRENT (A) 500 400 2000 2500 TURN OFF CURRENT (A) ts 20 VD = 2250V VDM = 3375V IT = 3000A VRG = 17V 10 CS = 3.5µF LS = 0.2µH Tj = 125°C 0 0 10 20 30 40 50 60 70 80 90 100 RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) 900 VD = 2250V VDM = 3375V diGQ/dt = –40A/µs 700 VRG = 17V CS = 3.5µF LS = 0.2µH 600 Tj = 125°C 1500 tgq TURN OFF GATE CURRENT VS. RATE OF RISE OF GATE CURRENT (TYPICAL) 800 1000 0 10 20 30 40 50 60 70 80 90 100 TURN ON GATE CURRENT (A) TURN OFF GATE CURRENT VS. TURN OFF CURRENT (TYPICAL) 300 500 IT = 3000A VD = 2250V diT/dt = 500A/µs diG/dt = 20A/µs Tj = 125°C 7.0 3000 VD = 2250V 850 VDM = 3375V IT = 3000A VRG = 17V 800 CS = 3.5µF LS = 0.2µH 750 Tj = 125°C 700 650 600 550 500 10 20 30 40 50 60 RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) Aug.1998 MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000CV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE TURN ON SWITCHING ENERGY (MAXIMUM) OFF STATE RECOVERY CHARGE (µC) OFF STATE RECOVERY TIME (µS) 200A/µs 2.0 1.5 100A/µs 1.0 1100 1700 2300 10 LS = 0.2µH Tj = 125°C CS = 2.0µF 3.5µF 8 6 4 2 1000 1500 2000 2500 3000 TURN OFF CURRENT (A) OFF STATE RECOVERY CHARGE, OFF STATE RECOVERY TIME VS. JUNCTION TEMPERATURE OFF STATE RECOVERY CHARGE, OFF STATE RECOVERY TIME VS. REVERSE CURRENT MAX. 103 7 5 3 2 AV. Qdr 102 7 5 3 2 IRM = 1500A di/dt = 100A/µs Tj = 125°C MAX. tdr AV. 0 diGQ/dt = –40A/µs 12 VRG = 17V 0 500 3500 2900 VD = 2250V 14 VDM = 3375V ON STATE CURRENT (A) 3 2 101 7 5 3 SWITCHING ENERGY Eoff (J/P) diT/dt = 300A/µs 20 40 60 80 100 120 OFF STATE RECOVERY CHARGE (µC) OFF STATE RECOVERY TIME (µS) 2.5 0.5 500 OFF STATE RECOVERY CHARGE (µC) OFF STATE RECOVERY TIME (µS) 16 VD = 2250V IGM = 40A diG/dt = 10A/µs CS = 3.5µF RS = 5Ω Tj = 125°C 140 5 di/dt = 100A/µs 3 Tj = 125°C 2 103 7 5 3 2 MAX. AV. Qdr 102 7 5 3 2 tdr MAX. 101 7 AV. 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 JUNCTION TEMPERATURE (°C) REVERSE CURRENT (A) OFF STATE RECOVERY CHARGE, OFF STATE RECOVERY TIME VS. RATE OF DECREASE OF REVERSE CURRENT 5 IRM = 1500A 3 Tj = 125°C MAX. 2 OFF STATE RECOVERY LOSS(DIODE PART) VS. REVERSE CURRENT (TYPICAL) 8 103 7 5 3 2 102 7 5 3 2 AV. Qdr tdr MAX. 101 AV. 7 5 0 1 2 10 2 3 5 7 10 2 3 5 7 10 2 3 5 7 103 RATE OF DECREASE OF REVERSE CURRENT (A /µS) OFF STATE RECOVERY LOSS(DIODE PART) (J/P) SWITCHING ENERGY Eon (J/P) 3.0 TURN OFF SWITCHING ENERGY (MAXIMUM) VRM = 2250V 7 CS = 3.5µF Tj = 125°C 6 5 4 di/dt = 300A/µs 3 100A/µs 2 1 0 500 1100 1700 2300 2900 3500 REVERSE CURRENT (A) Aug.1998