Powerex Power CT60AM-18F Insulated gate bipolar transistor Datasheet

MITSUBISHI Nch IGBT
CT60AM-18F
INSULATED GATE BIPOLAR TRANSISTOR
CT60AM-18F
OUTLINE DRAWING
Dimensions in mm
5
2
6
20MAX.
φ3.2
2.5
1
26
➃
20.6MIN.
2
1
➀
➁
➂
0.5
3
5.45 5.45
● VCES ............................................................................... 900V
● IC ......................................................................................... 60A
● Simple drive
● Integrated Fast-recovery diode
● Small tail loss
● Low VCE Saturation Voltage
4.0
➁➃
➀ GATE
➁ COLLECTOR
➂ EMITTER
➃ COLLECTOR
➀
➂
TO-3PL
APPLICATION
Microwave oven, Electromagnetic cooking devices, Rice-cookers
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
Ratings
Unit
900
V
Gate-Emitter Voltage
Peak Gate-Emitter Voltage
±25
±30
V
V
IC
ICM
Collector Current
Collector Current (Pulse)
60
120
A
A
IE
PC
Emitter Current
Maximum Power Dissipation
40
180
A
W
Tj
Junction Temperature
–40 ~ +150
°C
T stg
Storage Temperature
–40 ~ +150
°C
VCES
Collector-Emitter Voltage
VGES
VGEM
Conditions
VGE = 0V
Sep. 2000
MITSUBISHI Nch IGBT
CT60AM-18F
INSULATED GATE BIPOLAR TRANSISTOR
ELECTRICAL CHARACTERISTICS
Symbol
(Tch = 25°C)
Parameter
Test conditions
VCE = 900V, VGE = 0V
Limits
Unit
Min.
Typ.
Max.
—
—
—
—
1.0
0.5
mA
µA
2.0
—
4.0
2.1
6.0
2.7
V
V
—
4400
—
pF
—
—
115
75
—
—
pF
pF
—
—
0.05
0.1
—
—
µs
µs
—
—
0.2
0.2
—
—
µs
µs
0.6
8
1.0
12
mJ/pls
A
ICES
IGES
Collector cutoff current
Gate leakage current
VGE(th)
VCE(sat)
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Cies
Input capacitance
Coes
Cres
Output capacitance
Reverse transfer capacitance
td(on)
tr
Turn-on deray time
Turn-on rise time
td(off)
tf
Turn-off delay time
Turn-off fall time
Etail
Itail
Tail loss
Tail current
ICP = 60A, Tj = 125°C, dv/dt = 200V/µs
VEC
Emitter-collector voltage
IE = 60A, VGE = 0V
—
2.2
3.0
V
trr
Rth(j-c)
Diode reverse recovery time
Thermal resistance (IGBT)
IE = 60A, dis/dt = –20A/µs
—
—
0.5
—
2.0
0.69
µs
°C/W
Rth(j-c)
Thermal resistance (Diode)
—
—
4.0
°C/w
VGE = ±20V, VCE = 0V
VCE = 10V, IC = 6mA
IC = 60A, VCE = 15V
VCE = 25V, VGE = 0V, f = 1MHz
VCC = 300V, IC = 60A, VGE = 15V, RG = 10Ω
Junction to case
Junction to case
Sep. 2000
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