Plastic- Encapsulate Diodes SCHOTTKY DIODES BAW56/BAV70/BAV99 FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance M MARKING: O AK SOT-23 m Se BAW56:A1 BAV70:A4 ico MAXIMUM RATINGS (TA=25 BAV99:A7 Limit V s 70 V RI 0 200 mA unless otherwise noted) Symbol r to uc nd Parameter Reverse voltage Forward Current F IFM(surge) Peak Forward Surge Current P Power Dissipation A T Junction temperature G ELECTRICAL CHARACTERISTICS (Tamb=25 Reverse Breakdown Voltage Symbol VR mW /W unless otherwise specified) Min. Typ. Max. 70 Unit Conditions V IR=100μA d ite Parameter mA m Li ., J TST Storage temperature range 0 500 00 225 02 556 55 150 65 -55-150 0 50 Co RDθJ Thermal Resistance Junction to Ambient Air Unit VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1 V IF=50mA VF4 1.25 V IF=150mA Reverse current IR 2.5 μA VR=70V Capacitance between terminals CT 1.5 pF VR=0,f=1MHz Reverse recovery time t rr 6 ns Forward voltage IF = IR = 10mA, Irr= 0.1 x IR, RL = 100Ω MAKO Semiconductor Co., Limited Page:P2-P1 http://www.makosemi.hk/ Plastic- Encapsulate Diodes BAW56/BAV70/BAV99 Typical Characteristics O AK M r to uc nd ico m Se Co d ite m Li ., MAKO Semiconductor Co., Limited Page:P2-P2 http://www.makosemi.hk/