MITSUBISHI FS10KM-10A

MITSUBISHI
POWER
MOSFET
MITSUBISHI
NchNch
POWER
MOSFET
FS10KM-10A
FS10KM-10A
HIGH-SPEED
SWITCHING
USE
HIGH-SPEED
SWITCHING
USE
FS10KM-10A
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
➁
2.6 ± 0.2
➀ ➁ ➂
● 10V DRIVE
● VDSS ............................................................................... 500V
● rDS (ON) (MAX) .............................................................. 0.90Ω
● ID ......................................................................................... 10A
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
➀ GATE
➁ DRAIN
➂ SOURCE
➀
➂
TO-220FN
APPLICATION
SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
Conditions
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
Drain current
Drain current (Pulsed)
IDA
PD
Avalanche current (Pulsed)
Maximum power dissipation
Tch
Tstg
Channel temperature
Storage temperature
Viso
Isolation voltage
AC for 1minute, Terminal to case
Weight
Typical value
—
VGS = 0V
VDS = 0V
L = 200µH
Ratings
Unit
500
±30
V
V
10
30
A
A
10
35
A
W
–55 ~ +150
–55 ~ +150
°C
°C
2000
V
2.0
g
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS10KM-10A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
V (BR) GSS
Drain-source breakdown voltage
Gate-source breakdown voltage
I GSS
I DSS
Gate-source leakage current
Drain-source leakage current
VGS (th)
Gate-source threshold voltage
rDS (ON)
VDS (ON)
Drain-source on-state resistance
Drain-source on-state voltage
y fs
Ciss
Forward transfer admittance
Input capacitance
Coss
Crss
Output capacitance
Reverse transfer capacitance
t d (on)
tr
Turn-on delay time
Rise time
t d (off)
Turn-off delay time
tf
VSD
Fall time
Source-drain voltage
Rth (ch-c)
Thermal resistance
Limits
Test conditions
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 500V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 5A, VGS = 10V, R GEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
Unit
Min.
Typ.
Max.
500
±30
—
—
—
—
V
V
—
—
—
—
±10
1
µA
mA
2.5
3.0
3.5
V
—
—
0.70
3.5
0.90
4.5
Ω
V
4.8
—
8.0
1100
—
—
S
pF
—
—
110
25
—
—
pF
pF
—
—
20
30
—
—
ns
ns
—
140
—
ns
—
—
40
1.5
—
2.0
ns
V
—
—
3.57
°C/W
PERFORMANCE CURVES
DRAIN CURRENT ID (A)
40
30
20
10
0
0
20
DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
50
100
150
7
5
3
2
200
tw =
10µs
101
7
5
3
2
100µs
100
1ms
7
5
3
2
10
ms
TC = 25°C
Single Pulse
10–1
7
5
3
2
DC
2 3
5 7 101
2 3
5 7 102
2 3
5 7
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 20V,10V,8V
6V
TC = 25°C
Pulse Test
16
PD = 35W
12
5V
8
4
VGS = 20V,10V,6V
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
50
8
TC = 25°C
Pulse Test
6
5V
4
PD = 35W
2
4V
4V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS10KM-10A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
32
24
ID = 15A
16
10A
8
0
2.0
TC = 25°C
Pulse Test
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
40
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5A
0
4
8
12
16
1.6
VGS = 10V
1.2
VGS = 20V
0.8
TC = 25°C
Pulse Test
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
102
20
16
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
7
5
12
8
4
0
TC = 25°C
VDS = 10V
Pulse Test
0
4
8
12
16
3
2
100
7
5
VDS = 10V
Pulse Test
10–1 –1
10
20
2
3
5 7 100
2
3
5 7 101
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
3
Ciss
103
7
5
3
2
102
7
5
Coss
TCh = 25°C
VGS = 0V
f = 1MHZ
Crss
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
TC = 25°C,75°C,125°C
7
5
GATE-SOURCE VOLTAGE VGS (V)
3
2
101
101
3
2
104
7
5
3
2
3
2
2
td(off)
102
tf
7
5
3
td(on)
2
tr
101
7
5
10–1
2
3
5 7 100
TCh = 25°C
VGS = 10V
VDD = 200V
RGEN = RGS = 50Ω
2
3
5 7 101
DRAIN CURRENT ID (A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS10KM-10A
HIGH-SPEED SWITCHING USE
20
200V
400V
12
8
4
TCh = 25°C
ID = 10A
0
20
40
60
80
TC =
25°C
SOURCE CURRENT IS (A)
VDS =
100V
32
125°C
16
8
0
100
1.6
0.8
2.4
3.2
4.0
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
3
2
100
7
5
3
2
–50
0
50
100
3.0
2.0
1.0
0
150
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
0.4
0
SOURCE-DRAIN VOLTAGE VSD (V)
VGS = 10V
7
ID = 5A
5
Pulse Test
1.4
VGS = 0V
Pulse Test
GATE CHARGE Qg (nC)
101
10–1
75°C
24
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
40
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE Zth (ch –c) (°C/ W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5 D = 1.0
3 = 0.5
2
100 = 0.2
7
5 = 0.1
3 = 0.05
2 = 0.02
7
5
3
2
PDM
= 0.01
10–1
Single Pulse
tw
T
D= tw
T
10–2 –4
10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
PULSE WIDTH tw (s)
Sep. 2001