MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE FS25SM-10A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 20.0 5.0 ➃ 4 2 f 3.2 2 19.5MIN. 1.0 ➀ ➁ 4.4 ➂ 5.45 5.45 0.6 2.8 4 ➁➃ ● 10V DRIVE ● VDSS ................................................................................ 500V ● rDS (ON) (MAX) .............................................................. 0.20Ω ● ID ......................................................................................... 25A ➀ GATE ➁ DRAIN ➂ SOURCE ➃ DRAIN ➀ ➂ TO-3P APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc. MAXIMUM RATINGS (Tc = 25°C) Ratings Unit VDSS Drain-source voltage Parameter VGS = 0V 500 V VGSS ID Gate-source voltage Drain current VDS = 0V ±30 25 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) L = 200µH Maximum power dissipation Channel temperature 75 25 A A 200 –55 ~ +150 W °C Storage temperature –55 ~ +150 °C 4.8 g Symbol PD Tch Tstg — Weight Conditions Typical value Sep. 2001 MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS V (BR) GSS Drain-source breakdown voltage Gate-source breakdown voltage IGSS IDSS Gate-source leakage current Drain-source leakage current VGS (th) Gate-source threshold voltage rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) Thermal resistance Limits Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 12A, VGS = 10V ID = 12A, VGS = 10V ID = 12A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 12A, VGS = 10V, RGEN = RGS = 50Ω IS = 12A, VGS = 0V Channel to case Unit Min. Typ. Max. 500 ±30 — — — — V V — — — — ±10 1 µA mA 2.5 3.0 3.5 V — — 0.15 1.80 0.20 2.40 Ω V 15.0 — 25.0 4600 — — S pF — — 460 100 — — pF pF — — 60 100 — — ns ns — 630 — ns — — 140 1.5 — 2.0 ns V — — 0.625 °C/W PERFORMANCE CURVES 200 150 100 50 0 MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 250 0 50 100 7 5 100µs 3 2 1ms 101 7 5 10 ms TC = 25°C Single Pulse 3 2 100 DC 150 3 2 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 20 PD = 200W VGS = 20V,10V,8V,5V VGS = 20V,10V,6V 40 TC = 25°C Pulse Test 30 5V 20 10 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) tw = 10µs 102 7 5 50 0 7 5 3 2 16 12 TC = 25°C Pulse Test 8 4 0 4V 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 16 12 8 ID = 40A 4 25A 0 0.5 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 20 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 12A 0 4 8 12 16 TC = 25°C Pulse Test 0.4 0.3 VGS = 10V 0.2 0.1 VGS = 20V 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 103 40 32 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 7 5 24 16 8 0 TC = 25°C VDS = 10V Pulse Test 0 4 8 12 16 3 2 101 7 5 VDS = 10V Pulse Test 2 5 7 101 3 2 3 5 7 102 DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 Ciss Coss 3 2 Crss TCh = 25°C VGS = 0V f = 1MHZ 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) td(off) 7 5 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) TC = 25°C,75°C,125°C 100 0 10 20 103 7 5 101 7 5 GATE-SOURCE VOLTAGE VGS (V) 3 2 3 2 102 3 2 104 7 5 102 7 5 3 2 3 2 tf 102 tr 7 5 td(on) TCh = 25°C VGS = 10V VDD = 200V RGEN = RGS = 50Ω 3 2 101 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 100V 200V 12 400V 8 4 TCh = 25°C ID = 25A 0 80 160 240 320 75°C 24 16 8 0 1.6 0.8 2.4 3.2 4.0 ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 3 2 100 7 5 3 2 –50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (°C) 0.4 125°C SOURCE-DRAIN VOLTAGE VSD (V) VGS = 10V 7 ID = 12A 5 Pulse Test 1.4 TC = 25°C GATE CHARGE Qg (nC) 101 10–1 VGS = 0V Pulse Test 32 0 400 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 40 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 D = 1.0 = 0.5 = 0.2 PDM 10–1 7 5 = 0.1 = 0.05 3 2 = 0.02 Single Pulse tw T D= tw T = 0.01 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep. 2001