WINNERJOIN BCW68G Pnp epitaxial silicon transistor Datasheet

RoHS
BCW68G
PNP EPITAXIAL SILICON TRANSISTOR
D
T
,. L
SURFACE MOUNT SMALL
SIGNAL TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25
1.
Rating
Unit
Collector-Emitter Voltage
Vceo
-45
V
Collector-Base Voltage
Vcbo
-60
V
Collector Current
Ic
-800
mA
Collector Dissipation Ta=25 *
PD
225
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg
-65-150
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol
R
T
DC Current Gain
Hfe
Collector-Emitter Saturation Voltage
Vce(sat)
Gain Bandwidth Product
fT
O
Min
120
2.4
1.3
IC
N
Max
400
-1.5
100
C
E
L
*
Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
#
Pulse Test: Pulse Width
J
E
Unit
C
1.BASE
2.EMITTER
3.COLLECTOR
O
0.4
Symbol
2.9
1.9
0.95 0.95
Characteristic
U nit:m m
Test Conditions
Vce= -1.0V Ic= -10mA
V
MHz
Ic= -300mA Ib= -30mA
Vce= -5V Ic=-10mA
f=50MHz
300uS,Duty cycle 2%
E
W
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