TSC BZV55B4V7 0.5 watts hermetically sealed glass zener voltage regulator Datasheet

BZV55B2V4-BZV55B75
500mW,2% Tolerance Zener Diode
Small Signal Diode
Mini-MELF (LL34)
HERMETICALLY SEALED GLASS
Features
—Wide zener voltage range selection:2.4V to 75V
—Vz Tolerance Selection of ±2%
—Designed for through-Hole Device Type Mounting
—Hermetically Sealed Glass
—Pb free version and RoHS compliant
—High reliability glass passivation insuring parameter
stability and protection against junction contamination
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
3.30
3.70
0.130
0.146
—High temperature soldering guaranteed : 270°C/10s
B
1.40
1.60
0.055
0.063
—Polarity : Indicated by cathode band
C
0.25
0.40
0.010
0.016
—Weight : approx. 31 mg
D
1.25
1.40
0.049
0.055
Dimensions
Mechanical Data
—Case : Mini-MELF Package (JEDEC DO-213AC)
Ordering Information
Part No.
Package code
BZV55B2V4-75
BZV55B2V4-75
L0
L1
Suggested PAD Layout
Package
LL34
LL34
Packing
1.25
10K / 13" Reel
2.5K / 7" Reel
0.049
2.00
2.50
0.079
0.098
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
5.00
0.197
mm
inch
Maximum Ratings
Type Number
Symbol
Value
Units
PD
500
mW
Power Dissipation
Maximum Forward Voltage @IF=100mA
Thermal Resistance (Junction to Ambient) (Note 1)
Storage Temperature Range
VF
1
V
RθJA
TJ,TSTG
300
°C/W
-65 to + 175
°C
Zener I vs.V Characteristics
Current
IF
VZM VZ VBR
VR
IR
IZK
VF
Voltage
IZT
IZM
BreakdownRegion
Leakage Region
Forward Region
VBR
: Voltage at IZK
IZK
: Test current for voltage VBR
ZZK
: Dynamic impedance at IZK
IZT
: Test current for voltage VZ
VZ
: Voltage at current IZT
ZZT
: Dynamic impedance at IZT
IZM
: Maximum steady state current
VZM
: Voltage at IZM
Version : C11
BZV55B2V4-BZV55B75
500mW,2% Tolerance Zener Diode
Small Signal Diode
Electrical Characteristics
Ta = 25°C unless otherwise noted
VF Forward Voltage = 1.0V Maximum @ IF = 100 mA for all part numbers
Part Number
VZ @ IZT (Volt)
Min
Nom
Max
IZT(mA)
ZZT @ IZT(Ω)
Max
IZK(mA)
ZZK @ IZK(Ω)
Max
IR @ VR(μA)
Max
VR(V)
BZV55B2V4
2.35
2.4
2.45
5
85
1.0
600
50
1.0
BZV55B2V7
2.65
2.7
2.75
5
85
1.0
600
10
1.0
BZV55B3V0
2.94
3.0
3.06
5
85
1.0
600
4
1.0
BZV55B3V3
3.23
3.3
3.37
5
85
1.0
600
2
1.0
BZV55B3V6
3.53
3.6
3.67
5
85
1.0
600
2
1.0
BZV55B3V9
3.82
3.9
3.98
5
85
1.0
600
2
1.0
1.0
BZV55B4V3
4.21
4.3
4.39
5
75
1.0
600
1
BZV55B4V7
4.61
4.7
4.79
5
60
1.0
600
0.5
1.0
BZV55B5V1
5.00
5.1
5.20
5
35
1.0
550
0.1
1.0
1.0
BZV55B5V6
5.49
5.6
5.71
5
25
1.0
450
0.1
BZV55B6V2
6.08
6.2
6.32
5
10
1.0
200
0.1
2.0
BZV55B6V8
6.66
6.8
6.94
5
8
1.0
150
0.1
3.0
5.0
BZV55B7V5
7.35
7.5
7.65
5
7
1.0
50
0.1
BZV55B8V2
8.04
8.2
8.36
5
7
1.0
50
0.1
6.2
BZV55B9V1
8.92
9.1
9.28
5
10
1.0
50
0.1
6.8
BZV55B10
9.80
10
10.20
5
15
1.0
70
0.1
7.5
BZV55B11
10.78
11
11.22
5
20
1.0
70
0.1
8.2
BZV55B12
11.76
12
12.24
5
20
1.0
90
0.1
9.1
BZV55B13
12.74
13
13.26
5
26
1.0
110
0.1
10
BZV55B15
14.70
15
15.30
5
30
1.0
110
0.1
11
BZV55B16
15.68
16
16.32
5
40
1.0
170
0.1
12
BZV55B18
17.64
18
18.36
5
50
1.0
170
0.1
13
BZV55B20
19.60
20
20.40
5
55
1.0
220
0.1
15
BZV55B22
21.56
22
22.44
5
55
1.0
220
0.1
16
BZV55B24
23.52
24
24.48
5
80
1.0
220
0.1
18
BZV55B27
26.46
27
27.54
5
80
1.0
220
0.1
20
BZV55B30
29.40
30
30.60
5
80
1.0
220
0.1
22
BZV55B33
32.34
33
33.66
5
80
1.0
220
0.1
24
BZV55B36
35.28
36
36.72
5
80
1.0
220
0.1
27
BZV55B39
38.22
39
39.78
2.5
90
0.5
500
0.1
28
BZV55B43
42.14
43
43.86
2.5
90
0.5
600
0.1
32
BZV55B47
46.06
47
47.94
2.5
110
0.5
700
0.1
35
BZV55B51
49.98
51
52.02
2.5
125
0.5
700
0.1
38
BZV55B56
54.88
56
57.12
2.5
135
0.5
1000
0.1
42
BZV55B62
60.76
62
63.24
2.5
150
0.5
1000
0.1
47
BZV55B68
66.64
68
69.36
2.5
160
0.5
1000
0.1
51
BZV55B75
73.50
75
76.50
2.5
170
0.5
1000
0.1
56
Notes:
1. The Zener Voltage (VZ) is tested under pulse condition of 10ms
2. The device numbers listed have a standard tolerance on the nominal zener voltage of±2%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances,
contact your nearest Taiwan semiconductor representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the DC zener current
(IZT or IZK) is superimposed to IZT or IZK.
Version : C11
BZV55B2V4-BZV55B75
500mW,2% Tolerance Zener Diode
Small Signal Diode
Rating and Sharacteristic Curves
1000
Total Capacitance [pF]
PD-Power Passipation [mW]
600
500
400
300
200
f = 1MHz
Ta = 25℃
VR = 0V
100
VR = 2V
100
VR = 30V
1
0
40
80
120
160
0
200
20
40
VZ - Reverse Voltage [V]
Temperature [℃ ]
Figure 1. Power Dissipation vs Ambient Temperature
1000
60
80
Figure 2. Total Capacitance
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
1000
Iz=1mA
Ta = 25℃
Ta = 25℃
Iz=2mA
100
Forward Current [mA]
Differential Zener Impedance [Ω]
VR = 20V
10
0
Iz=5mA
Iz=10mA
10
1
100
10
1
0.1
0.1
1
10
VZ - Reverse Voltage [V]
0
100
0.2
0.4
0.6
0.8
VF - Forw ard Voltage [mV]
1
1.2
Figure 4. Forward Current vs. Forward Voltage
Figure 3. Differential Impedance vs. Zener Voltage
300
100
PD = 500mW
Ta = 25℃
Reverse Current [mA]
PD = 500mW
Ta = 25℃
250
Reverse Current [mA]
VR = 5V
200
150
100
50
10
1
0.1
0.01
0
0
2
4
6
VZ - Reverse Voltage [V]
8
Figure 5. Reverse Current vs. Reverse Voltage
10
15
25
35
45
55
65
VZ - Reverse Voltage [V]
75
Figure 6. Reverse Current vs. Reverse Voltage
Version : C11
BZV55B2V4-BZV55B75
500mW,2% Tolerance Zener Diode
Small Signal Diode
Tape & Reel specification
TSC label
Carieer Tape
Any Additional Label (If Required)
P0
d
P1
T
E
A
C
Symbol
Dimension(mm)
Carrier width
A
1.83 ±0.10
Carrier length
B
3.73 ±0.10
Carrier depth
C
1.80 ±0.10
Sprocket hole
d
1.50 ± 0.10
Item
Top Cover Tape
F
W
B
Reel outside diameter
D
178 ± 1
330 ± 1
Reel inner diameter
D1
55 Min
100Min
Feed hole width
D2
13.0 ± 0.20
Sprocket hole position
E
1.75 ±0.10
Punch hole position
F
3.50 ±0.05
Sprocke hole pitch
P0
4.00 ±0.10
Embossment center
P1
2.00 ±0.05
Overall tape thickness
T
0.23±0.005
Tape width
W
8.00 ±0.30
Reel width
W1
14.4max
W1
D
D2
D1
Direction of Feed
Version : C11
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